Effect of Vacancy Defects on the Young's Modulus and Fracture Strength of Graphene: A Molecular Dynamics Study

The Young's modulus of graphene with various rectangular and circular vacancy defects is investigated by molecular dynamics simulation. By comparing with the results calculated from an effective spring model, it is demonstrated that the Young's modulus of graphene is largely correlated to the size of vacancy defects perpendicular to the stretching direction. And a linear reduction of Young's modulus with the increasing concentration of mono‐atomic‐vacancy defects (i.e., the slope of ?0.03) is also observed. The fracture behavior of graphene, including the fracture strength, crack initiation and propagation are then studied by the molecular dynamics simulation, the effective spring model, and the quantized fracture mechanics. The blunting effect of vacancy edges is demonstrated, and the characterized crack tip radius of 4.44 Å is observed.     

类氢及碱金属原子激发态寿命的半经典计算公式

根据对应原理,得到了类氢原子能态平均寿命半经典的计算公式τ(n,l),然后利用相对论单通道量子数亏损理论进行推广,得到用来计算考虑总角动量J的激发态寿命公式τ(n,l,l+1/2)和τ(n,l,l-1/2),利用单通道量子数亏损理论得到了碱金属原子n、l远大于1时激发态寿命的半经典公式τ(n.l)=τ0(m+M/nm/v/+M)2v7l(l+1/2)/n4,其计算结果和实验数据符合的很好.     

On actions of Drinfel'd doubles on finite dimensional algebras

Let q be an nth root of unity for $n>2$ and let $T_n(q)$ be the Taft (Hopf) algebra of dimension $n^2$. In 2001, Susan Montgomery and Hans-Jürgen Schneider classified all non-trivial $T_n(q)$-module algebra structures on an n-dimensional associative algebra A. They further showed that each such module structure extends uniquely to make A a module algebra over the Drinfel'd double of $T_n(q)$. We explore what it is about the Taft algebras that leads to this uniqueness, by examining actions of (the Drinfel'd double of) Hopf algebras H “close” to the Taft algebras on finite-dimensional algebras analogous to A above. Such Hopf algebras H include the Sweedler (Hopf) algebra of dimension 4, bosonizations of quantum linear spaces, and the Frobenius–Lusztig kernel $u_q({\mathfrak{sl}}_2)$.     

Quasipatterns versus superlattices resulting from the superposition of two hexagonal patterns

We present a short review of the experimental observations and mechanisms related to the generation of quasipatterns and superlattices by the Faraday instability with two-frequency forcing. We show how two-frequency forcing makes possible triad interactions that generate hexagonal patterns, twelvefold quasipatterns or superlattices that consist of two hexagonal patterns rotated by an angle α relative to each other. We then consider which patterns could be observed when α does not belong to the set of prescribed values that give rise to periodic superlattices. Using the Swift–Hohenberg equation as a model, we find that quasipattern solutions exist for nearly all values of α. However, these quasipatterns have not been observed in experiments with the Faraday instability for $\alpha \ne \mathrm{\pi }/6$. We discuss possible reasons and mention a simpler framework that could give some hint about this problem.     

Chiral bidiaziridines by a two-step domino aziridination of meso-α-diimines

Chiral racemic α-diimines, tested in aziridination reactions with NsONHCO₂Et, for the first time led to the synthesis of (±)-bidiaziridines, stereoselectively derived from the corresponding meso (E-s-trans-E)-α-diimines. Moreover, a minor bidiaziridine isomer, probably a meso form that was lost under classical work-up conditions, can be obtained by adding water to the crude mixtures at the end of amination reactions. The results definitively prove that the imine aziridination by carbamates is a two-step domino process. The structures of the compounds were determined using 2D NMR on purified bidiaziridines.     

Local strain and defects in silicon wafers due to nanoindentation revealed by full‐field X‐ray microdiffraction imaging

Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full‐field X‐ray microdiffraction imaging using synchrotron radiation is employed to investigate the long‐range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods.     

Selective etching of ZnTe in HF:H2O2:H2O solution: Interpretation of extended defect‐related etch figures

HF:H₂O₂:H₂O solution (40%wt.HF: 30wt.%H₂O₂: H₂O, 3:2:1 by volume) was used to reveal extended defects (line, face and volume defects) in bulk ZnTe crystals grown from Te solution. The etch patterns were analyzed based on their size, shape and distribution. The etch figures, both in the shape of pits and hillocks with high resolution, show forms controlled by the symmetries of the respective faces were produced. Two different sizes of pits were observed, the larger‐size pits correspond to dislocations penetrating the surface, however, the smaller‐size texture pits are produced on the defect‐free region, which serve as standard pits on respect faces. The face defects, such as grain boundaries, sub‐grain boundaries, dislocation walls, twins and stacking faults, can be all displayed clearly. Another essential feature of the etchant is that, it can effectively dissolve Te‐rich phase (Te inclusion/precipitates), which makes it promising to reveal the shape of this volume defect.     

厚壁管道周向导波检测技术实验研究

厚壁管道是火电机组四大管道系统的核心部件,将超声导波技术应用于厚壁管道的无损检测显得十分重要.首先确定厚壁管道检测的激励方式,优化选取适合厚壁管道检测的0.5MHz探头和楔形块角度为60°的斜探头组合.通过改变斜探头与外壁轴向缺陷之间周向距离,在一定范围内仍可检测到缺陷回波,且接收到的周向回波幅值变化不大,表明周向导波...