基于蛇形光路的PET探测器作用深度提取方法

为实现正电子发射断层成像(Positron Emission Tomography,PET)探测器的作用深度(Depth Of Interaction,DOI)信息获取,本文提出一种基于分光技术的探测器设计方案.探测器采用晶体单元与硅光电倍增管(Silicon Photomultiplier,SiPM)一对一耦合、蛇形光路的设计和单端Anger加权读出方法进行DOI解码.基于GATE软件进行蒙特卡罗模拟,建立8×1的LSO晶体阵列(单根晶体尺寸3.1×3.1×20mm3);模拟泛场照射获取位置查找表;并进行不同深度的模拟,获得各晶体在各深度的空间分辨率.结果显示所模拟的探测器模块DOI分辨率在1.0~6.7mm之间,平均值为3.2mm.本文提出的基于蛇形光路的PET探测器方案能在维持系统成本和复杂度的前提下实现DOI解码,提升PET系统的成像性能.     

The interfacial properties of MgCl2 films grown on a flat SiO2/Si substrate. An XPS and ISS study

The interaction between MgCl₂ and SiO₂ was investigated by X-ray photoelectron spectroscopy (XPS), ion scattering spectroscopy (ISS) and contact potential difference (CPD) measurements. A thin SiO₂ layer was grown for this purpose on a Si(1 0 0) wafer and MgCl₂ was applied on this support at room temperature by evaporation under UHV conditions. It was found that magnesium chloride is deposited molecularly on the SiO₂ substrate, growing in layers and covering uniformly the oxide surface. The interaction with the substrate is initially very weak and limited to the interfacial layer. Above 623 K, most of the molecular MgCl₂ is re-evaporated and the interfacial interaction becomes stronger, as Mg-Cl bonds in the remaining sub-monolayer chloride break and Cl atoms desorb. This leaves on the surface sub-stoichiometric MgCl_x, which interacts with oxygen atoms from the substrate to form a complex surface species. At 973 K all Cl atoms desorb and Mg remains on the surface in the form of an oxide.     

Rapid synthesis and characterization of silicon substituted nano hydroxyapatite using microwave irradiation

Nano sized hydroxyapatites with silicon substitution of three different silicon concentrations were successfully prepared first time by a rapid microwave assisted synthesis method, with a time saving and energy efficient technique. The effects of the Si substitution on crystallite size, particle size and morphology of the powders were investigated. The crystalline phase, microstructure, chemical composition, and morphology and particle size of hydroxyapatite and silicon substituted hydroxyapatites were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy and dynamic light scattering. The crystallite size and particle size decreases with increase in silicon content and particle morphology spheroidal for pure hydroxyapatite changes to elongated ellipsoidal crystals while silicon substitution increases. Fourier Transform Infrared Spectroscopy analysis reveals, the silicon incorporation to hydroxyapatite lattice occurs via substitution of silicate groups for phosphate groups. Substitution of phosphate group by silicate in the apatite structure results in a small increase in the lattice parameters in both a-axis and c-axis of the unit cell.     

Kapitza phonon transmission from clean H-silicon(111) surfaces into liquid helium

We have studied the phonon transmission from ultraclean Si(111) surfaces into liquid helium by the phonon pulse technique. Reflection experiments and angular resolving transmission experiments were performed to measure the absolute value of the transmission coefficient and its dependence on the phonon emission angle into the solid. Clean samples etched conventionally in dilute HF show a significant anomalous transmission. An additional etch step in highly buffered HF (i.e., NH₄F) with a pH-value of 7.8 reduces the transmission coefficient drastically. Local inhomogeneities of the transmission coefficient caused by the deposition of water molecules on the surface could be visualized by the enhanced transmission. We found that the observed anomalous transmission is caused by mass defects.     

Identity of defect causing nonideality in nearly ideal Au/n-Si Schottky barriers

We have proposed a mechanism of nonideality, i.e., the temperature dependence of the ideality factor, in nearly ideal Au/n-Si Schottky barriers. Because of the nature of metal-induced gap states, positively ionized defects close to the interface are considered to cause local lowering of the Schottky barrier height (SBH) due to downward bending of the energy band. These positively charged defects become neutralized in equilibrium with the Fermi level due to the band bending, when they are very close to the interface. However, because the SBH lowering disappears by the neutralization of donor, the energy level of donor with a usual energy level scheme rises above the Fermi level after the neutralization. This contradiction to the equilibrium neutralization is resolved by Si self-interstitial with a large negative-U property, which is generated by the fabrication process. The energy level of the donor estimated from the SBH lowering is in good agreement with that of theoretical calculation of Si self-interstitial. Thus, the defect is concluded to be the Si self-interstitial, which is distributed to more than 10 Å depth from the interface.     

Core-level photoelectron study of indium chains on Si(1 1 1) at 10 K

High-resolution core-level data from the prototypical In/Si(1 1 1) system have been acquired at 10 K. An asymmetric tail in the In 4d spectra reveals a metallic character of the low temperature Si(1 1 1)8 × 2 phase confined to the inner indium rows. The decoupling of the one-dimensional inner indium chains from any metallic environment at ∼10 K suggests a possible Luttinger liquid behavior. At room temperature essentially a broadening of the spectral features is noticed, which appears compatible with a fluctuation scenario.     

Probing mechanical properties of thin film and ceramic materials in micro- and nano-scale using indentation techniques

In this study, we report on the mechanical properties, failure and fracture modes in two cases of engineering materials; that is transparent silicon oxide thin films onto poly(ethylene terephthalate) (PET) membranes and glass-ceramic materials. The first system was studied by the quazi-static indentation technique at the nano-scale and the second by the static indentation technique at the micro-scale. Nanocomposite laminates of silicon oxide thin films onto PET were found to sustain higher scratch induced stresses and were effective as protective coating material for PET membranes. Glass-ceramic materials with separated crystallites of different morphologies sustained a mixed crack propagation pattern in brittle fracture mode.     

红外光谱法研究射频功率对微晶硅薄膜微结构的影响

采用射频等离子体增强化学气相沉积(RF-PECVD)技术,在硅衬底上以不同的射频功率生长微晶硅(μc-Si:H)薄膜,利用傅里叶变换红外透射光谱技术对薄膜进行测试.通过对红外透射光谱的高斯拟合分析,结果表明薄膜中的氢含量和硅氢键合模式跟射频功率密切相关;当射频率从30W增加到110W时,薄膜中的氢含量先减少后慢慢增加,而结构因子逐渐增加后再减小,并且硅氢键合模式由以SiH为主转变为以SiH2为主.并讨论了这些参量随射频功率变化的机理.     

Unoccupied band dispersion of Si(1 1 1):√3 × √3-Ag surface studied by time- and angle-resolved two-photon photoemission spectroscopy

Band dispersion and transient population of unoccupied electronic states on Si(1 1 1):√3 × √3-Ag surface have been studied by time-resolved (TR) and angle-resolved (AR) two-photon photoemission (2PPE) spectroscopy. The band dispersions originating from unoccupied electronic states have been identified from the comparison between AR-2PPE spectra and angle-resolved one-photon photoemission spectra with synchrotron radiation. A lifetime of unoccupied surface state has been determined from the TR-2PPE spectra.     

Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles

New findings on the self-interstitial migration in p-type silicon are presented. They are based on experimental studies of the formation kinetics of defects related to interstitial carbon after irradiation with alpha particles. The main parameters characterizing the interaction rate of silicon self-interstitials with substitutional carbon atoms have been determined. A preliminary interpretation of the experimental data is given. The interpretation takes into account different diffusivities of self-interstitials in their singly and doubly ionized states.