Bi2Te3拓扑绝缘体表面颗粒化铅膜诱导的超导邻近效应

拓扑绝缘体的出现为寻找拓扑超导体和Majorana费米子提供了一种可能的途径. 在拓扑绝缘体Bi₂Te₃表面沉积极薄的不连续铅膜, 试图通过邻近效应感应出大片的超导区, 为下一步研究拓扑超导电性创造条件.借助四引线电输运测量实验, 在0.25 K的低温下看到了超流现象, 表明沉积在Bi₂Te₃表面的厚度小于20 nm的颗粒化铅膜能够诱导邻近效应, 并且使大片Bi₂Te₃超导. 关键词： 超导邻近效应 S-N-S结 拓扑绝缘体     

Proposal for loss reduction and output enhancement of silicon Raman laser using bi-directional pumping scheme

Based on a novel loss analysis, we numerically demonstrate that bi-directional pumping scheme is an effective technique to achieve loss reduction and maximum output power enhancement in silicon Raman laser. We then investigate the influence of cavity end-facet reflectivity under the bi-directional pumping scheme. Low end-facet reflectivity cavity simultaneously maximizes the output power and enhancement effect of bi-directional pumping, resulting in a fully optimized peak Stokes output.     

Identity of defect causing nonideality in nearly ideal Au/n-Si Schottky barriers

We have proposed a mechanism of nonideality, i.e., the temperature dependence of the ideality factor, in nearly ideal Au/n-Si Schottky barriers. Because of the nature of metal-induced gap states, positively ionized defects close to the interface are considered to cause local lowering of the Schottky barrier height (SBH) due to downward bending of the energy band. These positively charged defects become neutralized in equilibrium with the Fermi level due to the band bending, when they are very close to the interface. However, because the SBH lowering disappears by the neutralization of donor, the energy level of donor with a usual energy level scheme rises above the Fermi level after the neutralization. This contradiction to the equilibrium neutralization is resolved by Si self-interstitial with a large negative-U property, which is generated by the fabrication process. The energy level of the donor estimated from the SBH lowering is in good agreement with that of theoretical calculation of Si self-interstitial. Thus, the defect is concluded to be the Si self-interstitial, which is distributed to more than 10 Å depth from the interface.     

基于蛇形光路的PET探测器作用深度提取方法

为实现正电子发射断层成像(Positron Emission Tomography,PET)探测器的作用深度(Depth Of Interaction,DOI)信息获取,本文提出一种基于分光技术的探测器设计方案.探测器采用晶体单元与硅光电倍增管(Silicon Photomultiplier,SiPM)一对一耦合、蛇形光路的设计和单端Anger加权读出方法进行DOI解码.基于GATE软件进行蒙特卡罗模拟,建立8×1的LSO晶体阵列(单根晶体尺寸3.1×3.1×20mm3);模拟泛场照射获取位置查找表;并进行不同深度的模拟,获得各晶体在各深度的空间分辨率.结果显示所模拟的探测器模块DOI分辨率在1.0~6.7mm之间,平均值为3.2mm.本文提出的基于蛇形光路的PET探测器方案能在维持系统成本和复杂度的前提下实现DOI解码,提升PET系统的成像性能.     

The optoelectronic properties of silicon films deposited by inductively coupled plasma CVD

Hydrogenated amorphous and microcrystalline silicon films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at low substrate temperatures using H₂-diluted SiH₄ as a source gas. High-density plasma generated by inductively coupled excitation facilitates the crystallization of silicon films at low temperatures, and microcrystalline silicon films were obtained at the substrate temperature as low as 180 °C. The columnar structure of the films becomes more and more compact with an increase of their crystallinity. The reduction of hydrogen content in the films causes a narrowing of the optical bandgap and an enhancement of the absorption with increasing the substrate temperature. The microcrystalline silicon films show two electronic transport mechanisms: one is related to the density of state distribution in the temperature region near room temperature and the other is the variable range hopping between localized electronic states close to the Fermi level below 170 K. A reasonable explanation is presented for the dependence of the optoelectronic properties on the microstructure of the silicon films. The films prepared at a substrate temperature of 300 °C have highly crystalline and compact columnar structure, high optical absorption coefficient and electrical conductivity, and a low hydrogen content of 3.8%.     

Predicting and researching adsorption configurations of pyridazine on Si(100) surface by means of X-ray spectroscopies in theory

The landscape of organic molecule on Si(100) surface has a great significance for organic functionalisation of Si semiconductor. Several possible adsorption configurations for pyridazine on Si(100) surface have been forecasted by systemic comparison and investigation. The C1s XPS and NEXAFS spectra of these adsorption systems based on density functional theory and full core-hole potential approximation have been calculated. Although the sensibility of XPS to these adsorption configurations is not very strong, these configurations can be absolutely distinguished by NEXAFS spectra, which will bring tremendous reference to the future experimental study. Mode II, III, V and VI have a significantly higher adsorption energy, which are most likely to be present in experiment. In addition, we have made the research on specific sources of the peaks in spectra by analysing their decomposed NEXAFS spectra, the results show that the Carbon atoms which do not bond to surface atoms, make the most contribute to the intensity of characteristic peaks in spectra.     

Effects of hydroxyl groups and hydrogen passivation on the structure,electrical and optical properties of silicon carbide nanowires

The effects of hydrogen and hydroxyl passivation on the structure, electrical and optical properties of SiCNWs were investigated. The passivation performance of different atoms (groups) were discussed by analyzing the distribution of electronic states and the polarity of chemical bonds. The results show that passivation can improve the stability of SiCNWs structure, and the effect of hydroxyl is better than hydrogen passivation. And hydrogen and hydroxyl passivation both increase the band gap of SiCNWs, and the changing trend of band gap is relevant to the polarity of the covalent bond formed by the passivation of surface atoms. Moreover, passivation enhances the stability of the optical properties of SiCNWs, resulting in narrowing of light absorption, photoconductivity and other spectra, and the response peak shifts to the deep ultraviolet region, which means that hydrogen or hydroxyl passivation of SiCNWs is likely to be a candidate material for deep ultraviolet micro-nano optoelectronic devices.     

Quantitative characterization of holographic displays based on liquid-crystal-on-silicon spatial light modulator

This report discusses the effect of speckle size on the quality of holographic images based on a liquid-crystal-on-silicon (LCoS) spatial light modulator (SLM). Further, it proposes methods of quantifying the average speckle size and holographic image resolution. These methods enable both characteristics to be compared using the same unit (the number of pixels in the holographic image), providing an intuitive and effective comparative analysis method. In particular, by varying the LCoS resolution ratio, the change in the resolvable minimum pixels of the holographic image is interpreted in conjunction with the average speckle size; moreover, an analysis of the correlation between the latter two is presented. This approach, based on LCoS resolution division, could provide useful insights into single-SLM-based, full-color holographic displays using space division. Furthermore, it could be extended to other components, including more advanced LCoS SLMs, and used to identify the relative effects on image quality with speckles.     

有耗介质层上多导体传输线的电磁耦合时域分析方法

目前,针对空间电磁场作用有耗介质层上传输线的电磁耦合,仍缺乏有效的数值分析方法.因此,本文提出一种高效的时域混合算法,很好地解决了有耗介质层上传输线电磁耦合建模难的问题.首先,对经典传输线方程进行改进,推导了适用于有耗介质层上多导体传输线电磁耦合分析的修正传输线方程.然后,结合时域有限差分方法和相应插值技术,求解修正传输线方程,获得多导线及其端接负载上的电压和电流响应,并实现空间电磁场辐射与多导线瞬态响应的同步计算.最后,通过相应计算实例的数值模拟,与CST软件的仿真结果进行对比,验证了时域混合算法的正确性和高效性.     

C++QED: an object-oriented framework for wave-function simulations of cavity QED systems

We present a framework for efficiently performing Monte Carlo wave-function simulations in cavity QED with moving particles. It relies heavily on the object-oriented programming paradigm as realised in C++, and is extensible and applicable for simulating open interacting qua ntum dynamics in general. The user is provided with a number of “elements”, e.g. pumped moving particles, pumped lossy cavity modes, and various interactions to compose complex interacting systems, which contain several particles moving in electromagnetic fields of various configurations, and perform wave-function simulations on such systems. A number of tools are provided to facilitate the implementation of new elements.