拓扑材料中的超导

近来,人们在凝聚态体系中发现了由拓扑不变量定义的物相,其中最重要的有拓扑绝缘体、拓扑半金属和拓扑超导体等.这些物相的拓扑性质由非平凡的拓扑数描述,相应的材料被称为拓扑材料,具有诸多新奇的物理特性.其中拓扑超导体由于边界上有满足非阿贝尔统计的Majorana零能模,成为实现拓扑量子计算的主要候选材料.除了探索本征的拓扑超导体外,由于拓扑性质上的相似性,在不超导的拓扑材料中调制出超导自然成为了实现拓扑超导的重要手段.目前,人们发展了栅极调制、掺杂、高压、近邻效应调制和硬针尖点接触等多种技术,已经成功地在许多拓扑绝缘体和半金属中诱导出了超导,并对超导的拓扑性和Majorana零能模进行了研究.本文回顾了本征拓扑超导候选材料,以及拓扑绝缘体和半金属中诱导出超导的代表性工作,评述了不同实验手段的优势和缺陷、分析了其超导拓扑性的证据,并提出展望.     

Topological insulating phase for anti-Hermitian Hamiltonians

We study classification of anti-Hermitian topological insulators based on the discrete symmetries: time-reversal, particle-hole and chiral symmetries. Contrary to the most general form of non-Hermitian systems, bulk boundary correspondence can hold in anti-Hermitian topological systems. We map a topologically nontrivial Hermitian Hamiltonians into an anti-Hermitian system and we show that the standard table of topological insulators can be used for anti-Hermitian Hamiltonians.     

Dynamically Induced Excitonic Instability in Pumped Dirac Materials

Driven and non-equilibrium quantum states of matter have attracted growing interest in both theoretical and experimental studies in condensed matter physics. Recent progress in realizing transient collective states in driven or pumped Dirac materials (DMs) is reviewed herein. In particular, the focus is on optically pumped DMs which are a promising platform for transient excitonic instabilities. Optical pumping combined with the linear (Dirac) dispersion of the electronic spectrum offers a knob for tuning the effective interaction between the photoexcited electrons and holes, and thus provides a way of reducing the critical coupling for excitonic instability. As a result, a transient excitonic condensate could be achieved in a pumped DM while it is not feasible in equilibrium. A unifying theoretical framework is provided for describing transient collective states in 2D and 3D DMs. The experimental signatures are described and numerical estimates of the size of the dynamically induced excitonic gaps and the values of the critical temperatures for several specific systems, are summarized. In addition, general guidelines for identifying promising material candidates are discussed. Finally, comments are provided regarding recent experimental efforts in realizing transient excitonic condensate in pumped DMs, and outstanding issues and possible future directions are outlined.     

Double Andreev reflections at surface states of the topological insulators with hexagonal warping

We study the Andreev reflection(AR)at the interface of the topological insulator with hexagonal warping and superconductor junction.Due to the hexagonal warping effect,the double ARs are found in a certain range of the incident angle,where for one incident electron beam,two beams of holes are reflected back.Interestingly,both the beams of holes are reflected as retro-AR on the same side of the normal line of the interface but with different reflection angles,different from the previously reported double AR with one retro-AR and one specular-AR.The double reflections owing to the warping effect show the optics-like property of the Dirac fermion and can stimulate the double reflections of light in anisotropic crystals.In addition,we find that the double ARs are dependent on the hexagonal warping parameter nonmonotonically,and in an intermediate strength the double AR phenomenon is prominent,providing a possibility to explore the warping parameter of topological insulators.     

1200 V碳化硅功率MOSFET低温特性的实验表征及分析

碳化硅功率MOSFET是宽禁带功率半导体器件的典型代表,具有优异的电气性能。基于低温环境下的应用需求,研究了1200 V碳化硅功率MOSFET在77.7 K至300 K温区的静/动态特性,定性分析了温度对碳化硅功率MOSFET性能的影响。实验结果显示,温度从300 K降低至77.7 K时,阈值电压上升177.24%,漏-源极击穿电压降低32.99%,栅极泄漏电流降低82.51%,导通电阻升高1142.28%,零栅压漏电流降低89.84%(300 K至125 K)。双脉冲测试显示,开通时间增大8.59%,关断时间降低16.86%,开关损耗增加48%。分析发现,碳化硅功率MOSFET较高的界面态密度和较差的沟道迁移率,是导致其在低温下性能劣化的主要原因。     

Properties of the skeleton of aggregates grown on a Cayley tree

We discuss and analyze a family of trees grown on a Cayley tree, that allows for a variable exponent in the expression for the mass as a function of chemical distance, M(l)l ^dl . For the suggested model, the corresponding exponent for the mass of the skeleton,d _l ^s , can be expressed in terms ofd _l asd _l ^s = 1,d _l d _l ^c = 2;d _l ^s = d _l –1,d ₁ d _l ^c = 2, which implies that the tree is finitely ramified ford _l 2 and infinitely ramified whend _l 2. Our results are derived using a recursion relation that takes advantage of the one-dimensional nature of the problem. We also present results for the diffusion exponents and probability of return to the origin of a random walk on these trees.     

A bound on the number of bound states in the Schrödinger equation

A boundS _l is given for the number of bound statesn _i in thelth partial wave corresponding to a spherically symmetric potential in non-relativistic quantum mechanics. This bound is given by whereV _a(l, r) is the attractive part of the effective potentialV(r)+l(l+1)/r ². Extensive comparative study ofS _i and the Bargmann inequality is made.     

Electrical transport and high pressure studies on bulk Ge20Te80 glass

The electrical resistivity of bulk Ge₂₀Te₈₀ has been measured as a function of pressure and temperature. At 5 GPa, an amorphous semiconductor-to-crystalline metal transition has been observed. The sample recovered from the high pressure cell, after the application of 7 GPa, has a face-centred cubic structure with a lattice constant of 6·42 A. In crystalline sample, the semiconductor-to-metal transition occurs at 7 GPa. The thermoelectric power has also been measured for glassy samples in the temperature range 300–240 K.     

原子在单色辐射作用下长时间内的行为研究

建立了原子在单色辐射作用下的模型,用微扰理论方法求解出原子处于两能级的几率.讨论了原子在单色辐射作用下长时间内的行为,得到了原子因辐射场的影响而变化的速率比能级的衰减速率大的情况下,原子在两能级间振荡,原子和辐射场相互作用越强,辐射场能够与原子发生作用的频率区间越宽,而且原子在单色光长时间辐射作用下高、低能级跃迁的速率不随时间而改变的结论.     

利用低能质子束产生高强度放射性束流

加拿大TRIUMF实验室利用¹¹C成功验证了一种产生高强度(～10⁸ions/s)放射性束流的方法. 该方法不同于普通在线同位素分离方法, 它利用了13MeV的低能强流质子束, 可以产生一系列核天体物理实验感兴趣的高强度放射性束流.