On the surface modification of microchannels for microcapillary electrophoresis chips

This paper presents systematic investigation of the microchannel surface properties in microCE chips. Three popular materials for microCE chips, polydimethylsiloxane (PDMS), quartz, and glass, are used. The zeta potentials of these microchannels are calculated by measuring the EOF velocity to evaluate the surface properties after surface modification. The hydrophobic PDMS is usually plasma-treated for microCE applications. In this study, a new method using a high-throughput atmospheric plasma generator is adopted to treat the PDMS surface under atmospheric conditions. In this approach, the cost and time for surface treatment can be significantly reduced compared with the conventional vacuum plasma generator method. Experimental results indicate that new functional groups could be formed on the PDMS surface after treatment, resulting in a change in the surface property. The time-dependent surface property of the plasma-treated PDMS is then measured in terms of the zeta potential. Results show that the surface property will reach a stable condition after 1 h of plasma treatment. For glass CE chips, two new methods for changing the microchannel surface properties are developed. Instead of using complicated and time-consuming chemical silanization procedures for CE channel surface modification, two simple and reliable methods utilizing organic-based spin-on-glass and water-soluble acrylic resin are reported. The proposed method provides a fast batch process for controlling the surface properties of glass-based CE channels. The proposed methods are evaluated using PhiX-174 DNA maker separation. The experimental data show that the surface property is modified and separation efficiency greatly improved. In addition, the long-term stability of both coatings is verified in this study. The methods proposed in this study show potential as an excellent solution for glass-based microCE chip surface modification.     

孔梯度陶瓷纤维复合膜管的制备及特性

陶瓷过滤管具有孔隙率高、耐腐蚀、耐高温、机械强度高、便于清洗、使用寿命长等优点,是高温烟尘处理用的高效过滤元件.本文研制了一种具有梯度孔结构堇青石陶瓷纤维复合膜过滤元件,该过滤元件是由多孔支撑体、过渡层和分离膜层组成.其中支撑体、过渡层和分离层的气孔率分别为35～40;、50～60;和60～70;.文中主要分析了孔梯度陶瓷纤维复合膜管的材料结构和抗热震性能,同时对复合膜管进行含尘气体过滤的冷态模拟试验.对于烟气中粒径大于或等于0.1μm的颗粒,复合膜管的截留率达到99.8;以上.     

Influence of Carbon Multiple Treatments on the Photoelectrical Properties of Porous Glasses

We have studied the influence of multiple carbon treatments on the properties of silica porous glasses. Each step of each carbon treatment started with filling the voids of porous glass with carbon. During the following anneal carbon interacted with the walls of the voids. It was shown that low dimensional silicon clusters were formed inside the voids as a result of this reaction. In the experiments the photoluminescence spectra and conductivity of carbon-processed specimens were measured. The size-distribution of voids in porous glasses was calculated from absorption—desorption isotherms. An original technique was proposed that allowed to obtain the size-distribution of silicon clusters from the positions of peaks in the photoluminescence spectra. Correlation between the photoluminescence intensity and the sizes of pores was revealed. The observed oscillations in the shapes of the photoluminescence spectra in subsequent cycles of carbon treatment are explained by changes of the number of clusters corresponding to definite peaks in the size distribution spectra.     

The effect of repulsive interactions on Bose-Einstein condensation

One-dimensional Bose gases that interact via a repulsive two-body interaction and show Bose-Einstein condensation at the free level are studied. It is shown that the introduction of this interaction, however small, destroys the condensate. It is also shown that the free energy of an interacting Bose gas does not depend on the boundary conditions(including attractive boundary conditions) in the van der Waals limit.     

Electrolytical production of Ni + Mo + Si composite coatings with enhanced content of Si

Ni + Mo + Si composite coatings were prepared by co-deposition of nickel with molybdenum and silicon powders from a nickel solution in which Mo and Si particles were suspended by stirring. The layers have been deposited on a carbon steel substrate (St3S) under galvanostatic conditions. The content of Si in deposited layers was about 2-5 wt.% depending on deposition current density and the value of electric charge. For comparison Ni + Mo composite coatings were obtained under analogous current conditions. Composite coatings of enhanced Si content (15 wt.%) were deposited from an electrolyte in which 40 g/dm³ of Si covered with electroless plated nickel was dispersed. Deposition current density was equal 0.1 A/cm² and the value of electric charge Q = 500 C/cm². The thickness of the coatings was about 100-300 μm depending on their kind, electric charge and the deposition current density. Surface and cross-section morphology were investigated by scanning electron microscope (SEM). All deposited coatings are characterized by great, developed surface area. No internal stresses causing their cracking were observed. Chemical composition of the layers was determined by X-ray fluorescence spectroscopy (XRF) method and quantitative X-ray analysis (QXRD). It was stated, that the content of molybdenum and silicon in Ni + Mo + Si coatings depends on deposition current density and the amount of the powder in bath. The results of structural investigation of the obtained layers by the X-ray diffraction (XRD) method show, that they consist in crystalline Mo or Mo and Si phases built into Ni matrix. Moreover, Ni + Mo + Si composite coatings were modified by thermal treatment. It has been found that the thermal treatment of Ni + Mo + Si composite coatings caused that the new phases (NiSi, Mo₂Ni₃Si and Ni₆Mo₆C_1.06) were obtained.     

XRR and GISAXS study of silicon oxynitride films

Thin films of silicon oxynitride have largely replaced pure silicon oxide films as gate and tunnel oxide films in modern technology due to their superior properties in terms of efficiency as boron barrier, resistance to electrical stress and high dielectric strength. A single chamber system for plasma enhanced chemical vapor deposition was employed to deposit different films of SiO_xN_yH_z with 0.85 < x < 1.91. All films were previously characterized by Rutherford back-scattering and infrared spectroscopy to determine the stoichiometry and the presence of various bonding configurations of constituent atoms. We used X-ray reflectivity to determine the electron density profile across the depth, and we showed that the top layer is densified. Moreover, grazing incidence small-angle X-ray scattering was used to study inhomogeneities (clustering) in the films, and it is shown that plate-like inhomogeneities exist in the top and sphere-like particles at the bottom part of the film. Their shape and size depend on the stoichiometry of the films.