载体表面氧化程度对Ni/SiC甲烷化催化剂性能的影响

采用等体积浸渍法制备了Ni/SiC甲烷化催化剂, 研究了SiC载体表面氧化程度对催化剂低温活性和高温稳定性的影响, 并采用热重-差示扫描量热、N₂物理吸附、傅立叶变换红外光谱、氨程序升温脱附、X射线衍射、氢程序升温还原和氢化学吸附技术对样品进行了表征. 结果表明, 随着载体氧化温度的提高, 催化剂的比表面积和镍分散度降低, 但还原性和反应稳定性提高. 未氧化载体所负载催化剂的高温稳定性最差, 其原因在于载体对镍粒子的固定作用最弱. 负载于500和700℃处理的SiC载体上的催化剂具有较好的低温活性和高温稳定性, 这是因为适度氧化后的载体能较好地分散并固定镍粒子. 900℃处理的载体因过度氧化形成了低活性的氧化层, 使负载的镍粒子变大, 因而催化剂的低温活性最差.     

酸性条件下硅醇盐Si(OCH_3)_4水解与聚合机理的密度泛函研究

用密度泛函方法在B3LYP/6-31G(d,p)基组水平上对反应系统中的所有物种进行全优化,用CPCM溶剂模型在同一基组水平上进行了单点计算,系统研究了硅醇盐前驱体Si(OCH3)4在酸性条件下的水解、聚合机理,阐明了二者的相互竞争关系.研究发现,H2O以氢键或配位键与前驱体结合,然后通过氢转移完成水解;水分子从质子化烷氧基的对面键合并发生水解;第4级水解是H2O从对位驱逐质子化烷氧基,但不能水解完全;水解产物通过"环状模式",由氢键结合成多元环,然后发生氢转移并完成聚合;水解过程的能垒明显低于聚合过程;H+阻止水解产物聚合成环;硅正离子可引发无垒聚合反应,但在能量上并不可行.     

聚乙二醇类表面活性剂对硅表面无电沉积Ag膜光滑作用研究

应用原子力显微镜技术及开路电位～时间谱技术,研究了非离子表面活性剂聚乙二醇2000,6000,20000对硅(100)表面无电沉积银膜的光滑作用.实验表明硅(100)表面无电沉积银的光滑程度以及镀层的质量均随聚乙二醇聚合度的增加而变好.     

二氧化硅胶体晶体及其为模板的多孔材料

用Stober法合成了粒径在35～750nm范围内的单分散的SiO₂粒子,考察了投料比对粒径的影响.研究了所制备的SiO₂胶体晶体的结构和反射光谱.利用两种不同粒径的SiO₂粒子作为模板和模板填充物,分别制备了SiO₂和重氮树脂的多孔材料.     

Surface chemistry and electronics of semiconductor–nanosystem junctions I: metal-nanoemitter-based solar cells

Photoelectrochemically prepared nanotopographies on semiconductors are used for realization of nanoemitter solar devices that are active in the photovoltaic and the photoelectrocatalytic mode. The development of solar devices by a nonlinear electrochemical process and combined chemical/electrochemical metal deposition is described. Based on this low-temperature scalable approach, first efficiencies of 7.3% in the photovoltaic mode are reported for the photoelectrochemical solar cell n-Si/SiO₂/Pt/I₃ ⁻–I⁻. With p-Si/Pt nanocomposite structures, light-induced H₂ evolution is achieved. The surface chemistry and morphology is analyzed by photoelectron spectroscopy (PES), Fourier transform infrared spectroscopy, and high-resolution scanning electron microscopy. The operational principle of Pt-based nanoemitter solar devices that use silicon single crystal absorbers is analyzed by Mott–Schottky plots, chronoamperometric profiles, and PES. Related to simultaneous oxide formation during Pt deposition, evidence for the formation of a metal–oxide–semiconductor junction is obtained that explains the observed electronic behavior. Contribution to the Fall Meeting of the European Materials Research Society, Symposium D: 9th International Symposium on Electrochemical/Chemical Reactivity of Metastable Materials, Warsaw, 17th–21st September 2007.     

巯基-乙烯基加成反应合成含硅聚合物的研究进展

巯基-乙烯基加成反应具有清洁、高效、条件温和的特点,广泛应用于有机合成、聚合物科学和材料化学等诸多领域。国内外关于这一反应的研究已有大量文献报道,但该反应在含硅聚合物的合成与应用研究中还少有触及。本文综述了巯基一乙烯基加成反应在聚硅氮烷、聚硅碳烷、聚硅氧烷三种含硅聚合物合成中的应用,介绍了国内外的研究现状及发展趋势,并...     

ICP-AES法测定金属硅中的Al、B、Ba、Ca、Cr、Cu、 Fe、Mg、Mn、Ni、Sr、Ti、V和Zn杂质元素

本文提供了一种测定金属硅中Ｂ,Ｆｅ,Ａｌ,Ｃａ,Ｍｎ等１４个杂质元素的ＩＣＰ－ＡＥＳ方法,在样品处理过程中,加入适量体积的甘露醇能够抑制Ｂ的挥发。用本方法测定了一个国家地球化学标准样（ＧＳＲ－４）,结果令人满意。     

基于重叠栅工艺的硅量子点阵列的制备与调控

利用半导体量子点阵列结构实现近邻耦合是规模化扩展自旋量子比特的主要方案之一.随着量子点数目的增加,量子点阵列器件的制作工艺及参数调控均愈加复杂.本文介绍了一种重叠栅工艺结构,利用多层相互重叠且具有不同功能的栅极定义量子点,制作出结构紧凑、调控性好的量子点阵列器件,解决了工艺扩展的难题.此外,本文发展了一套高效可靠的调控方法,按顺序逐个添加量子点并建立虚拟电极,实现了对量子点参数的独立控制,并且能够高效且独立地调控各量子点中的电子数目,克服了大规模量子点阵列中电压参数配置的困难.这些方法为未来实现大规模自旋比特阵列提供了一种标准化的方案.     

Metrological orientation-confirmation of Si(h h k) using scanning tunneling microscopy

For the periodicity-modulation of the Si(h h k) template between (0 0 1) and (1 1 1), it is necessary to prepare the surface with any orientation within this range, most especially for fabricating useful one-dimensional nanostructures. Especially, when there are no strong X-ray signals using the standard Cu K-α source in the vicinity of any arbitrarily chosen (H H K), it turns out that the line-profile analysis on the topographic image of scanning tunneling microscopy can be a unique way for confirming the orientation of the prepared surface. Though there are a number of small-width facets on the reconstructed surface, if any of well-defined facets, such as (1 1 1), (3 3 7), (1 1 2), and (3 3 5), are included in these facets it is possible to determine the orientation using the weighted-average method.     

Light emission from nanocrystalline silicon clusters embedded in silicon dioxide: Role of the suboxide states

Silicon clusters embedded in a silicon dioxide matrix were prepared by ultrasound-assisted implantation resulting in a modified concentration of suboxide states as revealed by high-resolution photoelectron spectroscopy. It is suggested that ultrasound treatment results in formation of different interface structure between silicon cluster and silicon dioxide matrix which is characterized by a distinctly reduced concentration of the suboxide states. It is observed that photoluminescence properties are strongly correlated with the concentration of the suboxide states thereby providing an evidence that besides a quantum confinement effect a closer look at the chemical composition of the nc-Si/SiO₂ system is important.