High pressure x-ray diffraction measurements on Mg2SiO4 glass

The structure factors of Mg₂SiO₄ glass have been measured using high energy x-ray diffraction up to pressures of 30.2 GPa, and the equation of state measured up to 12.8 GPa. The average Mg-O coordination numbers were extracted from the experimental pair distribution functions assuming two cases (i) there is no change in Si-O coordination number with pressure and (ii) the average Si-O coordination number increases the same as for pure SiO₂ glass. Both analyses give similar results and show a gradual increase in the average Mg-O coordination number from 5.0 at ambient pressure to ~ 6.6(6) at 30.2 GPa. There is good qualitative agreement between the experimental structure and equation of state data for the glass compared to several recent molecular dynamics simulations carried out on liquid Mg₂SiO₄.     

Enhancement of Tb emission by non-radiative energy transfer from Dy in silicate glass

A study of energy transfer was performed in dysprosium-terbium-doped silicate glasses at room temperature. Enhancement of the Tb³⁺ emission and a decrease in the Dy³⁺ emission are observed as a result of energy transfer from Dy³⁺ ions to Tb³⁺ ions. The energy transfer efficiencies, transfer probabilities, as well as average donor-acceptor distances were also calculated. It is concluded that the energy transfer mechanism between Dy³⁺ and Tb³⁺ ion is mainly electric dipole-dipole in nature.     

Synthesis and characterisation of Hf(thd)2X2 derivatives [X = N(SiMe3)2, OSiMe3 and OSiBuMe2] as precursors for MOCVD of hafnium silicate films

Hafnium β-diketonatochlorides HfCl₂(thd)₂ (1), HfCl(thd)₃ (2) as well as β-diketonato-silylamide and/or siloxide derivatives of 1 namely Hf(thd)₂[N(SiMe₃)₂]₂ (3), Hf(thd)₂(OSiMe₃)₂ (4) and Hf(thd)₂(OSi^tBuMe₂)₂ (5) (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) were synthesized and characterized by elemental analysis, FT-IR, ¹H NMR and TGA. 2 and 5 were also characterized by single-crystal X-ray diffraction. The siloxide ligands are in cis position for 5 and exert a strong trans effect. The new volatile compounds were tested as single-source precursors for the deposition of HfSi_xO_y films by pulsed liquid injection MOCVD on Si(1 0 0) and R plane sapphire. The as-deposited at 600–800 °C films were essentially amorphous, Hf-rich (Hf/Hf + Si = 0.7–0.85) and smooth.     

Anionenstrukturen in Alkalisilicatschmelzen

Silicate Anions in Alkali Silicate Melts Melts of alkali silicates with molar ratios of alkali (Li, Na, K, Cs) to silicon between R = 4.0 and ca. 2.0 were prepared, quenched and worked up to the trimethylsilyl silicic acid esters. These were identified by comparison to the GC and silicon-29 NMR data of trimethylsilyl silicic acid esters from other sources. It was found that with cations of Li and Na mostly linear silicates were formed. But with the cations of K and Cs a considerable amount of the cyclic species Si₆O₉^6? was present. Branched silicates were of minor importance only. Besides the alkali silicon ratio, the temperature of the melt before quenching influences the composition of the silicate mixture.