Oxidation of Ni(Pt)Si by molecular vs. atomic oxygen

X-ray photoelectron spectroscopy (XPS) has been used to characterize the oxidation of a clean Ni(Pt)Si surface under two distinct conditions: exposure to a mixed flux of atomic and molecular oxygen (O + O₂; PO+O₂ = 5 × 10⁻⁶ Torr) and pure molecular oxygen (O₂; PO₂ = 10⁻⁵ Torr) at ambient temperatures. Formation of the clean, stoichiometric (nickel monosilicide) phase under vacuum conditions results in the formation of a surface layer enriched in PtSi. Oxidation of this surface in the presence of atomic oxygen initially results in formation of a silicon oxide overlayer. At higher exposures, kinetically limited oxidation of Pt results in Pt silicate formation. No passivation of oxygen uptake of the sample is observed for total O + O₂ exposure <8 × 10⁴ L, at which point the average oxide/silicate overlayer thickness is 23 (3) Å (uncertainty in the last digit in parentheses). In contrast, exposure of the clean Ni(Pt)Si surface to molecular oxygen only (maximum exposure: 5 × 10⁵ L) results in slow growth of a silicon oxide overlayer, without silicate formation, and eventual passivation at a total average oxide thickness of 8(1) Å, compared to a oxide average thickness of 17(2) Å (no silicate formation) for the as-received sample (i.e., exposed to ambient.) The aggressive silicon oxidation by atomic oxygen, results in Ni-rich silicide formation in the substrate and the kinetically limited oxidation of the Pt.     

Anionenstrukturen in Alkalisilicatschmelzen

Silicate Anions in Alkali Silicate Melts Melts of alkali silicates with molar ratios of alkali (Li, Na, K, Cs) to silicon between R = 4.0 and ca. 2.0 were prepared, quenched and worked up to the trimethylsilyl silicic acid esters. These were identified by comparison to the GC and silicon-29 NMR data of trimethylsilyl silicic acid esters from other sources. It was found that with cations of Li and Na mostly linear silicates were formed. But with the cations of K and Cs a considerable amount of the cyclic species Si₆O₉^6? was present. Branched silicates were of minor importance only. Besides the alkali silicon ratio, the temperature of the melt before quenching influences the composition of the silicate mixture.     

Synthesis and characterisation of Hf(thd)2X2 derivatives [X = N(SiMe3)2, OSiMe3 and OSiBuMe2] as precursors for MOCVD of hafnium silicate films

Hafnium β-diketonatochlorides HfCl₂(thd)₂ (1), HfCl(thd)₃ (2) as well as β-diketonato-silylamide and/or siloxide derivatives of 1 namely Hf(thd)₂[N(SiMe₃)₂]₂ (3), Hf(thd)₂(OSiMe₃)₂ (4) and Hf(thd)₂(OSi^tBuMe₂)₂ (5) (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) were synthesized and characterized by elemental analysis, FT-IR, ¹H NMR and TGA. 2 and 5 were also characterized by single-crystal X-ray diffraction. The siloxide ligands are in cis position for 5 and exert a strong trans effect. The new volatile compounds were tested as single-source precursors for the deposition of HfSi_xO_y films by pulsed liquid injection MOCVD on Si(1 0 0) and R plane sapphire. The as-deposited at 600–800 °C films were essentially amorphous, Hf-rich (Hf/Hf + Si = 0.7–0.85) and smooth.