The growth of Pd thin films on a 6H-SiC(0 0 0 1) substrate

Pd thin films, grown on Si-rich 6H-SiC(0 0 0 1) substrates, were studied by atomic force microscopy, electron diffraction and high-resolution transmission electron microscopy. It is concluded that the growth is successful only when all the growth process takes place at room temperature. Under these conditions a very good epitaxial growth of Pd is achieved, despite the large misfit (about 8.6%) between Pd and the substrate and the existence of a semi-amorphous layer between the thin film and the substrate. A large number of twins appear in these films.     

Investigation of the electrocatalytic behavior of single-wall carbon nanotube films on an Au electrode

The voltammetric behavior of uric acid (UA) was studied with an Au electrode modified with single-wall carbon nanotubes (SWNTs). In 0.1 M HAc-NaAc buffer solution (pH 5.0), the SWNT-modified electrode shows high electrocatalytic activity toward UA oxidation. The electro-oxidation of UA is an irreversible diffusion-controlled process with a diffusion coefficient (D) of 8.85×10⁻⁶ cm² s⁻¹. The peak current increases linearly with the concentration of UA in the range of 4.0×10⁻⁶-7.0×10⁻⁴ M. The detection limit is 1.0×10⁻⁶ M. The SWNT was characterized with scanning electron microscopy (SEM). Furthermore, the SWNT-modified electrode has favorable electrocatalytic activity toward dopamine and norepinephrine. This SWNT-modified electrode can also separate the electrochemical responses of uric acid, norepinephrine and ascorbic acid.     

Emanation Thermal Analysis of SiC Based Materials

Results of emanation thermal analysis (ETA) characterizing microstructure changes of SiC based materials during heat treatment in argon are demonstrated. This method made it possible to reveal fine changes of the texture of SiC nano-sized powders, SiC micro-sized powders and SiC whiskers under in situconditions of the heating. ETA curves can serve as fingerprints of the respective samples.This revised version was published online in November 2005 with corrections to the Cover Date.     

掺铒a-SixC1-x-H薄膜的发光特性

用等离子体增强化学气相沉积（PECVD）的方法，以固定的氢气（H2）流量和不同的硅烷（SiH4）和甲烷（CH4）流量比沉积了一系列的氢化非晶SiC（a-Si，C1-x-H）膜。用这种宽带隙的a-SixC1-x-H材料作为掺铒的基体材料，通过离子注入的方法得到掺铒的a-SixC1-x-H（a-SixC1-x-H：Er）膜。注入以后的样品经过不同温度的退火。用X射线光电子能谱（XPS）、红外吸收光谱（IR）、拉曼散射谱（Raman）等技术研究不同的SiH4／CH4流量比和退火温度对a-SixC1-x-H：Er发光强度的影响。结果表明，高温退火引起了膜中C的分凝，对饵的发光是不利的。通过低温和室温下铒发光强度的比较，表明这种材料具有较弱的温度猝灭效应。     

多壁碳纳米管负载铂的甲苯加氢脱芳催化剂

以多壁碳纳米管(CNTs)为载体制备了负载型Pt催化剂Pt/CNTs并将其用于催化甲苯加氢脱芳(HDA)反应.结果表明,在1.0%Pt/CNTs催化剂上,在0.4MPa,373K,PhCH3/H2摩尔比=6/94和GHSV=120L/(h.g)的反应条件下,甲苯转化率可达100%,比反应速率为0.0523mmol/(s.m2),分别是γ-Al2O3和AC负载各自最佳Pt负载量催化剂1.4%Pt/γ-Al2O3和2.4%Pt/AC上相应值的1.17和1.18倍.甲苯加氢产物全部为甲基环己烷,其他可能的加氢产物均在气相色谱检测限以下.催化剂的表征研究揭示,用CNTs代替γ-Al2O3或AC作为载体并不会引起所负载Pt催化剂上甲苯HDA反应的表观活化能发生明显变化.与γ-Al2O3或AC负载的相应催化剂相比,一方面,CNTs负载的Pt催化剂易于在较低温度下还原活化,并且其工作态催化剂表面催化活性Pt物种(Pt0)所占表面Pt摩尔分率有所提高;另一方面,CNTs负载的Pt催化剂对H2具有较高的吸附/活化和储存能力.这些促进效应对催化剂HDA活性的提高都有重要贡献.     

Quantitative SIMS analysis of SiC

We performed a systematic study of ion‐implanted 6H‐SiC standards to find the optimal regimes for SIMS analysis. Relative sensitivity factors (RSFs) were acquired for operating conditions typical of practical SIMS applications. The experimental SiC RSFs were compared with those found for silicon: 1 the matrix effect was insignificant in most cases. It was found that the SiO^? cluster ion cannot represent correctly the real oxygen distribution in SiC. The physics of the effect is discussed. Copyright © 2003 John Wiley & Sons, Ltd.     

Synthesis of ultrafine SiC from rice hulls (husks): A plasma process

Heat-treated rice hulls have been used as precursor material for synthesis of ultrafne SiC in a RF plasma reactor. Rice hulls containing finely distributed silica and active carbon act as a source for SiC formation. The plasma-synthesized powder contained ultrafnc -SiC with excess carbon and some unreacted silica. Post-treatment processes such as oxidation and acid (HF) treatment appear to be effective in removing the excess carbon and silica.     

受限于纳米碳管中的乙醇分子的结构和扩散的分子模拟研究

利用分子模拟研究了常温常压下受限于(8,8) (管径1.081 nm)和(15,15) (管径 2.035 nm)单壁纳米碳管中的乙醇分子. 对受限分子的径向密度分布和氢键等静态性质以及扩散性质进行了分析. 结果显示在管内乙醇分子的平均氢键数目和主体相一致. 乙醇分子在(8,8)碳管内具有高度有序的结构, 而在(15,15)碳管内由于空间的增大导致结构有序度的降低, 其中分子取向已呈随机分布. 进一步对扩散系数的分析发现, 在管内乙醇分子的轴向扩散系数低于主体相, 特别在(8,8)碳管内乙醇分子几乎丧失了轴向扩散能力.     

N-TiO2/ZnO复合纳米管阵列的掺杂机理及其光催化活性

以ZnO纳米柱阵列为模板, 采用溶胶-凝胶法制备出TiO2/ZnO和N掺杂TiO2/ZnO的复合纳米管阵列. 扫描电镜(SEM)、X射线光电子能谱(XPS)和紫外-可见漫反射吸收光谱(UV-Vis)的结果表明: 两种阵列的纳米管均为六角形结构, 直径约为100 nm, 壁厚约为20 nm; 在N-TiO2/ZnO复合纳米管阵列中, 掺入的N离子主要是以N-Ox、N-C和N-N的形式化学吸附在纳米管表面, 仅有少量的N离子以取代式掺杂的方式占据TiO2晶格O的位置; 表面N物种形成的表面态能级和取代式掺杂导致带隙的窄化, 增强了纳米管阵列的光吸收效率, 促进了光生载流子的分离. 光催化实验结果表明, N离子的掺杂有利于N-TiO2/ZnO复合纳米管阵列光催化活性的提高.