Influence of temperature-pressure treatment on heavily hydrogenated silicon surface

Microstructure and related properties of hydrogenated silicon samples, Si:H, treated at high-temperature (HT) up to 1270 K under hydrostatic argon pressure (HP) up to 1.1 GPa are investigated. To prepare Si:H, Czochralski grown 0 0 1 oriented single crystalline Si wafer with 50 nm thick surface SiO₂ layer was heavily implanted with hydrogen using the immersion plasma source of hydrogen ions with energy 24 keV.The surface of HT-HP treated Si:H was characterised by scanning electron microscopy. Reflectivity pattern measurements in the wavelength range of 350-2000 nm have been performed to analyse their surface and bulk properties. The volume averaging method for a model of layer-like structure has been used to simulate the HT-HP treated Si:H. The analysis of Si:H samples suggests the multi-layer structure composed of Si, Si:H, SiO, SiO₂, and of porous Si layers in the sub-surface region. The porous Si:H samples model is in good consistency with experimental data from reflectance measurements.     

A procedure for measuring the flexibility of single wood-pulp fibres

A way of determining the flexibility of wood-pulp fibres is developed, which involves i) a precise measurement of the topology of single-fibres by using a confocal laser scanning microscope and ii) the measurement of the elastic modulus of the fibres by using a single-fibre fatigue cell. Reported in this paper are the initial results of tests carried out on black spruce fibres, which have been subjected to three different levels of mechanical refining energy, namely ∼1100, 2300, and 3500 kWh/t. It is found that the fibre flexibility rises significantly between the first and second energy levels, but it does not change to the same degree between the second and third ones. The described procedure of measuring the flexibility of fibres may be used to establish the appropriate refiner energy necessary for the production of a specific grade of paper. Russian translation published in Mekhanika Kompozitnykh Materialov, Vol. 42, No. 1, pp. 115–128, January–February, 2006.     

半线性方程组边界层解的存在性

本文利用隐函数定理讨论了含小参数的半线性椭圆方程组边界层解的存在性．     

单层光学薄膜中薄膜－衬底体系的双重干涉效应及其应用

提出了单层光学薄膜中薄膜与衬底反射光之间的双重干涉效应的理论，实验结果证实了理论分析的正确性。双重干涉效应使薄膜－衬底体系的热致反射调制度高达８０％，这一效应可望有极广泛的应用     

水准折光及双波长激光效应

本文从“同温度层不完全平行于地面,且在变化”的“任意分层”假设出发,导出了水准折光修正公式,并利用光的色散效应在10~(-6)的精度要求下,求得r=r_T=h_1/h_2=(n_(01)-1)/(n_(02)-1)=常数最后指出,研制双波长激光水准仪的必要性和可能性,并提出了研制此种仪器的技术参数.     

维生素B类药物在薄层原位的近红外付立叶变换表面增强拉曼光谱

维生素Ｂ类药物在薄层原位的近红外付立叶变换表面增强拉曼光谱汪瑗，于秉正张煦（首都师范大学分析测试中心北京１０００３７）（北京大学分析测试中心北京）关键词维生素Ｂ_１，维生素Ｂ_２，薄层色谱，表面增强拉曼散射，近红外付立叶变换拉曼光谱将薄层色谱（ＴＬＣ）...     

Electrical Potential Distribution around a Charged Colloidal Particle: Nonlinear Integral Equation

多电解质溶液中带电胶体粒子的电势分布由球形Ｐｏｉｓｓｏｎ－Ｂｏｌｔｚｍａｎｎ方程（ＰＢＥ）描述．ＰＢＥ是一个非线性的微分方程，且难以求得其解析解．本文采用非线性Ｐ－Ｂ积分方程，计算电势分布的数值解．首先，根据静电场和热力学系统中的物理定理，导出描述电势分布的Ｐ－Ｂ积分方程（ＰＢＩＥ）；其次，用迭代方法求ＰＢＩＥ的数值解．最后，计算了在３－１型电解液中无量纲半径κａ分别为０．１２和０．２２，无量纲表面电势ξ分别为１，２，４，６时球形胶体粒子外部的电势值．为了检验数值解的精度，计算了表面电荷密度，并与Ｌｏｅｂ（１９６１）和Ｏｓｈｉｍａ（１９９５）等人的结果比较，本文结果的相对误差小于１％，优于Ｏｓｈｉｍａ的结果．     

Emanation Thermal Analysis of SiC Based Materials

Results of emanation thermal analysis (ETA) characterizing microstructure changes of SiC based materials during heat treatment in argon are demonstrated. This method made it possible to reveal fine changes of the texture of SiC nano-sized powders, SiC micro-sized powders and SiC whiskers under in situconditions of the heating. ETA curves can serve as fingerprints of the respective samples.This revised version was published online in November 2005 with corrections to the Cover Date.     

掺铒a-SixC1-x-H薄膜的发光特性

用等离子体增强化学气相沉积（PECVD）的方法，以固定的氢气（H2）流量和不同的硅烷（SiH4）和甲烷（CH4）流量比沉积了一系列的氢化非晶SiC（a-Si，C1-x-H）膜。用这种宽带隙的a-SixC1-x-H材料作为掺铒的基体材料，通过离子注入的方法得到掺铒的a-SixC1-x-H（a-SixC1-x-H：Er）膜。注入以后的样品经过不同温度的退火。用X射线光电子能谱（XPS）、红外吸收光谱（IR）、拉曼散射谱（Raman）等技术研究不同的SiH4／CH4流量比和退火温度对a-SixC1-x-H：Er发光强度的影响。结果表明，高温退火引起了膜中C的分凝，对饵的发光是不利的。通过低温和室温下铒发光强度的比较，表明这种材料具有较弱的温度猝灭效应。