Dynamic chemical devices: modulation of photophysical properties by reversible, ion-triggered, and proton-fuelled nanomechanical shape-flipping molecular motions

The terpy-derived (terpy=terpyridine) ligand 1 has an extended W shape in which the two appended photoactive pyrenyl groups are held apart. On binding of a zinc(II) ion with a terpy group, ligand 1 is converted into complex 2 whereby it adopts a U shape, thus stacking the aromatic units. This structural modification leads to a very pronounced change in photophysical properties: from a highly fluorescent free ligand to a very weakly emitting complex. The W/U structural switching can be reversibly induced by the addition of a competitive tren ligand, which binds and releases a zinc(II) ion under protonation/deprotonation cycles, thus leading to oscillations in light emission. Therefore, the present system performs periodic modulation of optical output through a nanomechanical shape-flipping motion, triggered by metal ion binding and fuelled by acid-base neutralisation energy. Overall, it represents an ion-triggered opto-mechanical supramolecular device.     

突破间接带局限创新Si基激光器

Si基高效发光与受激光发射是Si基光子学突破性发展的关键课题,它的实现对Si基微电子学的发展有深远的重大意义．由于受到天然Si材料间接带能带结构的限制,Si材料的发光效率极低,更谈不上可实现受激光发射,人工改性就成为当代研究、开拓的主要途径．新的Si基直接带体材料(如β-FeSi2等)的探索,Ge／Si量子阱、超晶格、量子点的能带工程介观改性,子带发光跃迁的探索,异类元素插入短周期超晶格中的化学键改性,以及SiO2高浓度nc-Si的生成和高激活度稀土离子的掺入发光等已开展了多途径的研究,不同程度上取得了重要的进展,一种MIS结构电子隧道注入高效发光器件已在SiO2：RE MOS结构中实现．运用激光器件物理的深入设计和新的器件技术的引入,可以预计本世纪初叶,对实现Si基激光器的奢望将会成为现实,无疑它对Si基光子学、Si基集成光电子学乃至信息高科技的发展将作出历史性的巨大贡献．     

White organic light-emitting devices

In view of their potential applications in flat panel displays, organic light-emitting devices have attracted much attention in the past decade. A challenging target in this field is to realize full color display applications. One of the approaches proposed for these is combining white emission with color filters, where efficient and pure white emission (especially at high brightness) is necessary. In this paper, three kinds of white organic light-emitting devices with different structures and materials are fabricated and their characteristics are discussed.     

Controllable π junction in a Josephson quantum-dot device with molecular spin

We consider a model for a single molecule with a large frozen spin sandwiched in between two BCS superconductors at equilibrium, and show that this system has a π junction behavior at low temperature. The π shift can be reversed by varying the other parameters of the system, e.g., temperature or the position of the quantum dot level, implying a controllable π junction with novel application as a Josephson current switch. We show that the mechanism leading to the π shift can be explained simply in terms of the contributions of the Andreev bound states and of the continuum of states above the superconducting gap. The free energy for certain configuration of parameters shows a bistable nature, which is a necessary pre-condition for achievement of a qubit.     

Shot noise in a quantum dot coupled to carbon nanotube terminals applied with a microwave field

We have investigated the spectral density of shot noise for the system of a quantum dot (QD) coupled to two single-wall carbon nanotube terminals irradiated with a microwave field on the QD. The terminal features are involved in the shot noise through modifying the self-energy of QD. The contributions of carbon nanotube terminals to the shot noise exhibit obvious behaviors. The novel side peaks are associated with the photon absorption and emission procedure accompanying the suppression of shot noise. The shot noise in balanced absorption belongs to sub-Poissonian, and it is symmetric with respect to the gate voltage. The differential shot noise displays intimate relation with the nature of carbon nanotubes and the applied microwave field. It exhibits asymmetric behavior for the unbalanced absorption case versus gate voltage. The Fano factor of the system exhibits the deviation of shot noise from the Schottky formula, and the structures of terminals obviously contribute to it. The super-Poissonian and sub-Poissonian shot noise can be achieved in the unbalanced absorption in different regime of source-drain bias.     

Second- and third-harmonic generations for a nondilute suspension of coated particles with radial dielectric anisotropy

We derive expressions for the effective nonlinear susceptibility tensors for both the second harmonic generation (SHG) and induced third harmonic generation (THG) of nonlinear composite materials, in which nondilute coated particles with radial dielectric anisotropy are randomly embedded in the linear host. Two types of coated particles are considered. The first is that the core possesses a second order nonlinear susceptibility and the shell is linear and radially anisotropic, while the second is that the core is linear with radial anisotropy and the shell has a second order nonlinear susceptibility. We observe greatly enhanced SHG and THG susceptibilities at several surface plasmon resonant frequencies. For the second model, due to the coating material being metallic, there exists two fundamental resonant frequencies ω_c1 and ω_c2, whose difference ω_c2-ω_c1 is strongly dependent on the interfacial parameter and the radial dielectric anisotropy. Furthermore, in both systems, the adjustment of the dielectric anisotropy results in larger enhancement of both SHG and induced THG susceptibilities at surface plasmon resonant frequencies than the corresponding isotropic systems. Therefore, both the core-shell structure and the dielectric anisotropy play important roles in determining the nonlinear enhancement and the surface resonant frequencies.