Syntheses and characterization of a new class of mono‐ and heterodinuclear derivatives of boron derived from Schiff bases

Reactions of 2‐isopropoxy‐1, 3, 2‐ benzodioxaborole with equivalent amounts of Schiff base ligands having two hydroxyl groups ( 1a–3a ) yield mononuclear derivatives with one residual hydroxy group. The reactions of these mononuclear derivatives with hexamethyldisilazane in a 2:1 ratio yield heterodinuclear derivatives. All these newly synthesized derivatives have been characterized by elemental analyses and molecular weight measurements. Tentative structures have been proposed on the basis of IR and NMR (¹H, ¹³C, ¹¹B,²⁹Si)spectral data and Fab‐mass studies. Schiff bases and their corresponding mono‐ and heterodinuclear derivatives of boron have also been screened for antifungal activities. Copyright © 2010 John Wiley & Sons, Ltd.     

Ce_3Rh_3Si_2和CeRh_3Si_2的磁性模拟和晶场效应研究

根据晶场理论,通过对D.Kaczorowski等人测量的磁化率倒数与温度关系曲线的模拟,得到了稀土化合物CeRh3Si2和Ce3Rh3Si2的晶场分裂能和相应波函数.对于CeRh3Si2和Ce3Rh3Si2,它们的第一激发能和总的激发能分别为176K,855K和77.5K,428K.计算表明,Kramers离子Ce3+在晶场效应的作用下,基态简并部分消除得到了三个双重态,模拟得到的化合物的磁化率倒数与温度关系曲线与实验曲线吻合较好.     

RAS: An efficient probe to characterize Si(0 0 1)-(2 × 1) surfaces

A complete inspection of the capabilities of reflectance anisotropy spectroscopy (RAS) in studying the adsorption of molecules or atoms on the Si(0 0 1)-(2 × 1) surface is presented. First, a direct comparison between RA spectra recorded on the clean Si(0 0 1)-(2 × 1) and the corresponding topography of the surface obtained using scanning tunneling microscopy (STM) allows us to quantify the mixing of the two domains that are present on the surface. Characteristic RA spectra recorded for oxygen, hydrogen, water, ethylene, benzene are compared to try to elucidate the origin of the optical structures. Quantitative and qualitative information can be obtained with RAS on the kinetics of adsorption, by monitoring the RA signal at a given energy versus the dose of adsorbate; two examples are presented: H₂/Si(0 0 1) and C₆H₆/Si(0 0 1). Very different behaviours in the adsorption processes are observed, making of this technique a versatile tool for further investigations of kinetics.     

Radiation damage in Si photodiodes by high-temperature irradiation

Results are presented of a detailed study of the effects of high-temperature 4-MeV neutron irradiation on the performance degradation of Si pin photodiodes together with the radiation-induced defects, observed by deep level transient spectroscopy. The degradation of the device performance and the introduction rate of the lattice defects decrease with increasing sample temperature during irradiation. For a 250°C irradiation, the reduction of the reverse current is only 20% of the starting value. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperatures. Carbon-related complex as hole capture levels is also mainly responsible for the device degradation for high-temperature neutron irradiation.     

Visible photoluminescence from a-Si : H/SiO2 superlattices fabricated by UHV evaporation

Hydrogenated amorphous-Si/SiO₂ (a-Si:H/SiO₂) superlattices with different a-Si : H thickness in the range of a few nanometers have been fabricated by ultra high vacuum evaporator (UHV evaporator). The photoluminescence (PL) of our superlattices is observed in the visible spectral region and the peak energy shifts to higher energy as the a-Si : H layer thickness decreases. The temperature dependence of the PL spectra reveals four sub-bands by fitting. Bands at 2.2, 1.9, 1.65 and 1.45 eV are detected and are attributed to E′δ centers, nonbridging-oxygen–hole centers (NBOHC), Si/SiO₂ interface and a-Si : H layer, respectively. We explain the overall blueshift of the PL spectra by the modification of the contribution of these sub-bands.     

SOI新结构——SOI研究的新方向

SOI（silicon-on-insulator：绝缘体上单晶硅薄膜）技术已取得了突破性的进展，但一般SOI结构是以SiO2作为绝缘埋层，以硅作为顶层的半导体材料，这样导致了一些不利的影响，限制了其应用范围。为解决这些问题和满足一些特殊器件／电路的要求，探索研究新的SOI结构成为SOI研究领域新的热点。如SOIM，GPSOI，GeSiOI，SionAlN，SiCOI，GeSiOI，SSOI等。文章将结合作者的部分工作，报道SOI新结构研究的新动向及其应用。     

Time-Resolved Photoluminescence Spectra of Porous Si

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Micro-thermal analysis of thermal conductance distribution in advanced silicon nitrides

A micro-thermal analysis technique was applied to investigate advanced silicon nitride materials, which exhibit high thermal conductivity. Local thermal properties in the microstructure were evaluated, and the grain boundaries were observed to have lower thermal conductance than the Si₃N₄ grains. It was found that thermal conductance both in the grains and boundaries was lowered by the addition of the sintering aid Al₂O₃, which is soluble in Si₃N₄ grains. This indicates that high thermal conductivity in silicon nitride ceramics is achieved both by grain growth, leading to a reduction in boundary density, and by eliminating soluble elements in silicon nitride grains. This revised version was published online in August 2006 with corrections to the Cover Date.     

注入Si中的稀土离子Er3+的光学特性

用离子注入方法,将稀土离子Er3+注入到n-Si单晶中,通过对其低温(77K)光致发光光谱的测量,研究其光学特性.结果表明,注入剂量控制在1×1012cm-2～1×1015cm-2范围,退火温度控制在900℃～1100℃时,样品的主要发光峰值位于1.54μm左右.研究了样品的光致发光光谱随注入剂量、退火温度的变化关系,给出峰值在1.54μm附近的未分辨开的谱线的半宽为16.4meV.