Ca3NbGa3Si2O14晶体的介电和压电特性

利用Y切和(yxl)30°切两种样品测量了Ca3NbGa3Si2O14晶体的介电、压 电和部分弹性参数.计算了(yxl)θ切型相关压电常数随切角的变化.与La3Ga5SiO14晶体相比，Ca3NbGa3Si2O14晶体具有更优良的压电性能，其压电常数 d11=7.93×10-12C/N，d14=-5.88×10-12C/N. 关键词： Ca3NbGa3Si2O14晶体 介电常数 压电常数     

Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals

In this work, the electrical and memory behaviour of metal-silicon nitride-silicon structures with an embedded nanocrystalline silicon layer, which either consists of separated silicon nanocrystals, or is a continuous nanocrystalline layer, are presented. The structures were prepared by low-pressure chemical vapour deposition (LPCVD). The effect of the duration of deposition and the structure of the nanocrystalline layer were studied. The writing/erasing behaviour was similar for all the structures, but the retention properties were much worse in the structure with a continuous nanocrystalline layer, than in the structures with separated Si nanocrystals. This indicates that Si nanocrystals play role in charge storage in the studied structures.     

Si CP/MAS NMR of phosphorus-bearing organosilicon compounds

While liquid-state ²⁹Si NMR of phosphorus-bearing organosilicon compounds with more than one phosphorus per molecule can take advantage of the presence of J-coupling ⁿJ(³¹P²⁹Si) for purposes of structural assignment from J-coupling patterns, conventional ²⁹Si CP/MAS spectra of such molecular solids do not reveal structural details in a straightforward manner. For such compounds it is necessary to obtain ²⁹Si CP/MAS spectra under conditions of simultaneous ¹H- and ³¹P-high power decoupling in order to derive reliable ²⁹Si chemical shift information. ²⁹Si CP/MAS NMR spectra, obtained with and without ³¹P high power decoupling during the acquisition time, of several organosilicon compounds containing Si_xP_y (x = 1 −10, y = 1 −10) moieties are reported.     

硅纳米结构中硅空位缺陷引发的双峰蓝光发射

报道了在硅纳米结构中417nm和436nm双峰结构的蓝光发射的实验和理论研究结果．制备了四种包含和没有包含β-SiC纳米晶粒的硅纳米结构，观察到了417nm和436nm的双峰蓝光发射．光致发光谱的分析和微结构的观察揭示了蓝光发射与硅纳米结构中过剩硅缺陷中心的存在有关．计算了由过剩硅原子形成的含有硅空位缺陷的纳米晶粒的电子能级，发现计算所得的态密度的特征与观察到的双峰发射吻合．这项工作提出了在许多硅纳米结构中存在417nm和436nm蓝光发射的一种可能的机制．     

Discrimination of individual atoms on Ge/Si(1 1 1)-(7 × 7) intermixed surface

We have discriminated individual Ge atoms from the intermixed Ge/Si(1 1 1)-(7 × 7) surface using a non-contact atomic force microscope at a room temperature environment. In fact, Si-Ge (IV-IV) binary system is considered as one of the most difficult systems for atomic discrimination among atoms in the IV group because of the similarities in the electronic and chemical properties. However, in this study, we found one of the most attractive tools to discriminate a specific atom from the others even in the difficult Si-Ge system. Ge atoms are shown as dim spots in comparison to Si atoms with bright spots on the intermixed surface by a weak chemical bonding energy and/or a relaxation effect despite large atomic radius and high spatial position in both variable frequency shift and topographic images. The discrimination of individual atoms with respect to the chemical interaction variation will further provide a chance to manipulate different atomic species and assemble various nanostructures in near future.     

具有窄光致发光谱的纳米Si晶薄膜的激光烧蚀制备

采用XeCl脉冲准分子激光器，在10Pa的Ar气环境下，烧蚀高阻单晶Si靶，分别在距靶3cm的玻璃和单晶Si衬底上制备了纳米Si薄膜. 相应的Raman谱和x射线衍射谱均证实了薄膜中纳米Si晶粒的形成. 扫描电子显微镜图像显示，所形成的薄膜呈均匀的纳米Si晶粒镶嵌结构. 相应的光致发光峰位出现在599nm，峰值半高宽为56nm，与相同参数下以He气为缓冲气体的结果相比，具有较窄的光致发光谱，并显示出谱峰蓝移现象. 关键词： 纳米Si晶粒 脉冲激光烧蚀 薄膜形貌 光致发光     

显微拉曼在硅半导体器件表征中的一些重要应用(英文)

显微拉曼(μRS)在硅半导体器件生产中有许多重要和独特的应用。它可以提供一些非常重要的,于传统表征技术,如四探针法,TEM,AFM,SEM及XRD,相辅助的信息。本文报道μRS在硅器件研究中的一些重要应用。我们成功的应用μRS研究技术上重要的TiSi2C54相在TiS2C40模板上生长的过程,以及NiSi,NiSi2,CoSi,CoSi2的形成过程。运用Si衬底的拉曼信号,超薄硅化物薄膜的厚度(10nm)可以得到非常精确,便利的测量。薄膜的均匀性及晶粒的取向也可以在微米范围内进行评估。利用UV激光在Si及GeSi内极短的穿透深度,UVμRS为下一代IC材料SiGe及器件的研究,特别是应力研究,提供了独特的工具。毫无疑问,μRS将在IC工业中得到更加广泛的应用。     

VHF等离子体光发射谱(OES)的在线监测

采用光发射谱(OES)测量技术，对不同制备条件下的甚高频(VHF)等离子体辉光进行了在线监 测.实验表明，VHF等离子体中特征发光峰(Si，SiH,H_α,H^*_β 等)的强度较常规的射 频(RF)等离子体明显增强，并且在制备μc-Si：H的工艺条件下(H稀释度R(H₂/S iH₄)=23 )，随激发频率的增加而增大，这些发光峰的变化趋势与材料沉积速率的变化规律较相似.Si H峰等的强度随气压的变化则因硅烷H稀释度及功率的不同而异：高H稀释(R=23)时，SiH峰强 度在低辉光功率下随反应气压的增大单调下降，在高辉光功率下随气压的变化呈现类高斯规 律；低H稀释(R=5．7)时， SiH峰随气压的变化基本上是单调下降的，下降速率也与功率有 关，这些结果表明，VHF-PECVD制备μc-Si：H和a-Si：H的反应动力学过程存在较大差异.此 外，随着激发功率的增大，Si，SiH峰都先迅速增大然后趋于饱和，并且随着H稀释率的增大 ，将更快呈现饱和现象.通过对OES结果的分析与讨论可知，VHF-PECVD技术沉积硅基薄膜可 以有效提高沉积速率，而且，硅基薄膜的沉积速率的进一步提高需要综合考虑H稀释度、气 压和功率等的匹配与优化. 关键词： 甚高频等离子体化学气相沉积 氢化硅薄膜 光发射谱     

Si纳米量子点的LPCVD自组织化形成及其生长机理研究

采用低压化学汽相沉积(LPCVD)方法，依靠纯SiH₄气体分子的表面热分解反应， 在由Si—O—Si键和由Si—OH键终端的两种SiO₂表面上，自组织生长了Si纳米量子点. 实 验研究了所形成的Si纳米量子点密度随SiO₂表面的反应活性位置数、沉积温度以及反应气 压的变化关系. 依据LPCVD的表面热力学过程，定性地分析了Si纳米量子点的形成机理.研究结果对具有密度分布均匀和晶粒尺寸可控的Si纳米量子点的自组织生长，以及Si基新型量子电子器 关键词： Si纳米量子点 LPCVD 自组织化形成 生长机理     

Homogeneous two-dimensional nucleation of guest-free silicon clathrates

The difficulty in synthesizing guest-free semiconductor clathrates complicates the process of determining how these cage-like structures form. This work studies the microscopic mechanism of the nucleation of guest-free Si₁₃₆ clathrate using molecular dynamics simulations with the Stillinger–Weber potential. The homogeneous nucleation of Si₁₃₆, which is realized in a narrow negative pressure range before liquid cavitation, exhibits the characteristic feature of the two-dimensional (2D) mode. The critical nucleus is composed of one to two five-membered rings, and the nucleation barrier is close to 1 k_BT. According to a thermodynamic model based on atomistic nucleation theory, the effective binding energy associated with the formation of 2D critical nuclei is significantly low, which is responsible for the low nucleation barrier of Si₁₃₆ clathrate. In the post-nucleation period, the critical nucleus preferentially grows into a dodecahedron, and the latter continuously grows with sharing face along 〈1 1 0〉.