Photoconductivity of erbium-doped germanium

We have applied the technique of Photo Thermal Ionization Spectroscopy (PTIS) to the study of an erbium-doped p-Ge epitaxial layer, grown by MBE on an undoped n-type germanium substrate. The Er-doped Ge layer shows continuum photoconductivity response in the far-infrared region extending from 70 cm^–1 to 900 cm^–1. This type of epitaxial Er-doped Ge layers is a potentially attractive system for photoconductivity detectors of far-infrared radiation. Below 900 cm^–1 three acceptor-like charged states can be distinguished with ionization energies of 9, 26.6 and 50 meV. Additionally, a study of the photoconductive response of the same sample for radiation from 1000 cm^–1 to 10000 cm^–1, i.e., for radiation energies well inside the forbidden gap to energies above it, shows a wealth of levels, some of which have previously been associated with erbium.On leave from: Instituto de Física, Universidad Autónoma de Puebla, Puebla, México     

Memory Effect in Ceramic Superconductors

We measured the time decay of the magnetic moment of high T_c superconductors YBa₂Cu₃O_7-δ ceramic samples and found the memory effect which has hitherto been reported only in single crystals. The temperature and field ranges, especially the memory phenomenon in ceramic samples at liquid nitrogen temperature can only be understood in a combined picture of both flux creep and glass behaviour     

半导体与超晶格的数学模型及其分析Ⅰ:模型

本文论及半导体与超晶格的数学模型方法的一些新近发展动态。介绍了半导体与超晶格的一些背景材料并给出了半导体宏观模型间的层次框架。超晶格中载流子传输的SHE扩散模型也被观察。     

Molecular dynamics simulation of CH3 interaction with Si(1 0 0) surface

Molecular dynamics simulations of the CH₃ interaction with Si(1 0 0) were performed using the Tersoff-Brenner potential. The H/C ratio obtained from the simulations is in agreement with available experimental data. The results show that H atoms preferentially react with Si. SiH is the dominant form of SiH_x generated. The amount of hydrogen that reacts with silicon is essentially energy-independent. H atoms do not react with adsorbed carbon atoms. The presence of C-H bonds on the surface is due to molecular adsorption.     

Scattering of a relativistic scalar particle by a cusp potential

We solve the Klein–Gordon equation in the presence of a spatially one-dimensional cusp potential. The scattering solutions are obtained in terms of Whittaker functions and the condition for the existence of transmission resonances is derived. We show the dependence of the zero-reflection condition on the shape of the potential. In the low-momentum limit, transmission resonances are associated with half-bound states. We express the condition for transmission resonances in terms of the phase shifts.     

Trapping neutral fermions with a PT-symmetric trigonometric potential in the presence of position-dependent mass

The relativistic problem of neutral fermions subject to PT-symmetric trigonometric potential (∼iαtanαx)$(\sim \mathrm{i}\alpha \tan \alpha x)$ in 1+1$1+1$ dimensions is investigated. By using the basic concepts of the supersymmetric quantum mechanics formalism and the functional analysis method, we solve exactly the position-dependent effective mass Dirac equation with the vector coupling scheme and obtain the bound state solutions in closed form. The behavior of the energy spectra is discussed in detail.     

应变Si NMOSFET阈值电压集约物理模型

本文采用渐变沟道近似和准二维分析的方法, 通过求解泊松方程, 建立了应变Si NMOSFET阈值电压集约物理模型. 模型同时研究了短沟道, 窄沟道, 非均匀掺杂, 漏致势垒降低等物理效应对阈值电压的影响. 采用参数提取软件提取了阈值电压相关参数, 通过将模型的计算结果和实验结果进行对比分析, 验证了本文提出的模型的正确性. 该模型为应变Si超大规模集成电路的分析和设计提供了重要的参考. 关键词： 应变Si NMOSFET 阈值电压 集约物理模型     

Ge_x Si_(1-x)/Si超晶格中纵声学声子的喇曼散射强度研究

本文用光弹理论,在全面考虑了超晶格中两种材料的声速,质量密度和光弹常数存在差别的基础上,计算了Ge_xSi_(1-x)/Si超晶格中折迭纵声学声子的喇曼散射强度,在高达50cm~(-1)的频率范围内,理论值和实验符合得很好。     

Extended phase diagram of La1-xCaxMnO3 by interfacial engineering

The interfacial enhanced ferromagnetism in maganite/ruthenate system is regarded as a promising path to broaden the potential of oxide-based electronic device applications. Here, we systematically studied the physical properties of LaLa_1-xCa_xMnO₃/SrRuO₃ superlattices and compared them with the LaLa_1-xCa_xMnO₃ thin films and bulk compounds. The LaLa_1-xCa_xMnO₃/SrRuO₃ superlattices exhibit significant enhancement of Curie temperature (T_C) beyond the corresponding thin films and bulks. Based on these results, we constructed an extended phase diagram of LaLa_1-xCa_xMnO₃ under interfacial engineering. We considered the interfacial charge transfer and structural proximity effects as the origin of the interface-induced high T_C. The structural characterizations revealed a pronounced increase of B-O-B bond angle, which could be the main driving force for the high T_C in the superlattices. Our work inspires a deeper understanding of the collective effects of interfacial charge transfer and structural proximity on the physical properties of oxide heterostructures.