Argon and krypton ion-induced changes in permalloy thin films

The effects of 75-keV Ar and 100-keV Kr ion irradiations of 72-nm thin DC-sputtered permalloy (Ni₈₁Fe₁₉) films on Si(100) wafers were studied at fluences of up to 10¹⁶ ions/cm². The changes of the structural and magnetic properties were measured via X-ray diffraction, Rutherford backscattering spectroscopy, and magneto-optical Kerr effect. The irradiations increase the lattice constant and improve the crystallinity of the samples. They induce also strong changes of the magnetic polarisation and the coercive field for increasing ion fluence. The hysteresis loops suggest that, with increasing ion fluence, the reversal of the magnetisation changes gradually from rotation-dominated in the as-deposited films to domain-wall-motion dominated at the highest ion fluences. The results are compared with those obtained for Ni-, Cr-and Xe-ion irradiated permalloy films.     

停流流动注射-化学发光法测定碘盐中的碘酸根

基于在酸性介质中 ,IO-3 与 I-快速反应产生 I2 ,I2 氧化 Luminol产生化学发光反应的机理 ,建立了Luminol- IO-3 偶合发光体系测定微量 IO-3 的方法。本法测定 IO-3 的线性范围为 5 .0× 10 -8- 3.0× 10 -5g/m L;检出限为 5 .0× 10 -8g/m L ;该法中的采样、停流和进样都由计算机自动控制 ,操作简便 ,灵敏度高 ,选择性好。应用于含碘食盐中微量 IO-3 的测定 ,结果令人满意     

Characterization of hydrogenated amorphous carbon thin films by end-Hall ion beam deposition

Pure hydrogenated amorphous carbon (α-C:H) and nitrogen doped hydrogenated amorphous carbon (α-C:H:N) thin films were prepared using end-Hall (EH) ion beam deposition with a beam energy ranging from 24 eV to 48 eV. The composition, microstructure and mechanical properties of the films were characterized by Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, scanning probe microscopy (SPM), and nano-scratch tests. The films are uniform and smooth with root mean square roughness values of 0.5-0.8 nm for α-C:H and 0.35 nm for α-C:H:N films. When the ion energy was increased from 24 eV to 48 eV, the fraction of sp³ bonding in the α-C:H films increased from 36% to 55%, the hardness increased from 8 GPa to 12.5 GPa, and the Young's modulus increased from 100 GPa to 130 GPa. In the α-C:H:N films, N/C atomic ratio, the hardness and Young's modulus of the α-C:H:N films are, 0.087, 15 and 145 GPa, respectively. The results indicate that both higher ion energy and a small amount of N doping improve the mechanical properties of the films. The results have demonstrated that smooth and uniform α-C:H and α-C:H:N films with large area and reasonably high hardness and Young's modulus can be synthesized by EH ion source.     

烟用有机肥中氯离子含量测定方法的比较

为科学指导烟草栽培中有机肥的施用,以保证烟叶氯含量在适宜范围内,保障烟叶质量,研究比较了离子色谱法、连续流动分析法、硝酸银滴定法和佛尔哈德法测定烟用有机肥中氯离子含量.几种测定氯离子含量的方法比较结果为:离子色谱法和连续流动分析法测定烟用有机肥中氯离子含量的结果均较好,且方法不存在显著差异;硝酸银滴定法对低含量样品的检测偏差较大;佛尔哈德法不适宜用于测定烟用有机肥中氯离子含量.离子色谱法和连续流动分析法的平均回收率分别为102.4％、103.1％,方法检出限分别为0.05mg/L、0.30mg/L,对样品测定的平均相对标准偏差分别为2.41％和2.77％.     

离子色谱-氢化物发生-原子荧光法测定含金尾矿中砷

研究了离子色谱-氢化物发生-原子荧光(IC-HG-AFS)联用测定金矿尾矿淋滤液中各种价态砷的方法。以(NH₄)₂HPO₄溶液(pH 6.00)为流动相,阴离子分离柱分离,原子荧光进行检测,As(Ⅲ)加标回收率在97%～107%、As(Ⅴ)在95%～109%之间,相对标准偏差小于4%。从测试结果和色谱分离图可以看出,该方法能够使As(Ⅲ),As(Ⅴ),MMA和DMA等四种形态的砷完全分离。检出限可达到As(Ⅲ)1.0 μg·L-1,As(Ⅴ)2.3 μg·L-1。该方法适用于金矿石、尾矿石淋出液及金矿周遍环境水体中不同价态砷和总砷的定性和定量测定。     

EAST高时空分辨极向弯晶谱仪系统的升级及初步实验结果

为了拓宽等离子体参数测量范围,对EAST极向弯晶谱仪(PXCS)进行了升级改造。配合高通量大面积水冷固体探测器,提高了极向弯晶谱仪系统的光子计数率、时间分辨率、空间探测范围以及长时间运行稳定性,并在EAST装置上成功运行。实验结果表明,升级后的谱仪获得了高信噪比的类氦氩离子的母线及其一系列伴线谱,通过光谱拟合分析给出了等离子体温度时间演化及其剖面信息,测量结果与切向弯晶谱仪的数据一致,验证了极向弯晶谱仪的升级结果和数据测量的可靠性,并且在EAST长脉冲实验运行也能够稳定地提供全时间的参数分布。     

阵列式光纤光谱仪的小麦霉变在线检测

小麦是我国战略性储藏粮食品种,但小麦易受霉菌感染而发生霉变,影响其食用安全。加强小麦有害霉菌侵染程度的早期检测是控制其危害的需要措施。然而,现有的平板计数和荧光染色等检测方法,普遍存在前处理繁杂、时效性差等不足。故此,拟运用阵列式光纤光谱仪结合化学计量学方法,建立霉变小麦的实时在线检测方法,并为进一步开发粮食品质与安全在线检测装备提供参考。小麦样品经辐照灭菌后分别接种五种谷物中常见有害霉菌：串珠镰刀菌83227、层出镰刀菌195647、雪腐镰刀菌3.503、寄生曲霉3.3950和赭曲霉3.3486,并置于28 ℃和85%相对湿度环境中储藏7 d以加速霉变。在样品储藏的第0,1,3,5和7 d,运用阵列式光纤光谱仪和漫反射探头在线采集样品的漫反射特征光谱,并依据国标平板计数法测定样品菌落总数水平。光谱采集步骤为：在线检测平台上,设置样品运动速度0.15 m·s-1和光谱仪积分时间20 ms,采集波段为600~1 600 nm,重复测量3次。然后,首先对小麦原始光谱进行平滑、多元散射校正和导数变换等预处理以消除光谱噪音;随后,运用主成分分析(PCA)对受不同霉变程度(储藏阶段)的小麦样品进行区分;最后,利用线性判别分析(LDA)和偏最小二乘回归分析(PLSR)建立小麦有害霉菌侵染程度的定性定量分析模型。小麦在储藏期内经历未霉变、开始霉变和严重霉变三个阶段。原始和二阶微分光谱显示霉菌侵染引起小麦光谱特征发生显著改变,PCA结果表明不同储藏阶段(霉变程度)小麦样品存在一定分离趋势。利用前十个主成分得分建立的LDA判别模型,对不同霉变程度小麦样品的识别率达90.0%以上。结果表明：小麦样品菌落总数的PLSR定量预测模型的预测决定系数(R2_p)为0.859 2,预测均方根误差(RMSEP)为0.401 Log CFU·g-1,相对分析偏差(RPD)达2.65。应用阵列式光纤光谱仪结合计量学方法在线评估小麦霉变具有一定可行性。下一步研究中,应扩大样品量,补充自然霉变及受更多代表性霉菌侵染的小麦样品,以不断增强模型的鲁棒性和方法的适用性。     

Monte Carlo simulation of ion–material interactions in nuclear fusion devices

One of the key aspects regarding the technological development of nuclear fusion reactors is the understanding of the interaction between high-energy ions coming from the confined plasma and the materials that the plasma-facing components are made of. Among the multiple issues important to plasma–wall interactions in fusion devices, physical erosion and composition changes induced by energetic particle bombardment are considered critical due to possible material flaking, changes to surface roughness, impurity transport and the alteration of physicochemical properties of the near surface region due to phenomena such as redeposition or implantation. A Monte Carlo code named MATILDA (Modeling of Atomic Transport in Layered Dynamic Arrays) has been developed over the years to study phenomena related to ion beam bombardment such as erosion rate, composition changes, interphase mixing and material redeposition, which are relevant issues to plasma-aided manufacturing of microelectronics, components on object exposed to intense solar wind, fusion reactor technology and other important industrial fields. In the present work, the code is applied to study three cases of plasma material interactions relevant to fusion devices in order to highlight the code’s capabilities: (1) the Be redeposition process on the ITER divertor, (2) physical erosion enhancement in castellated surfaces and (3) damage to multilayer mirrors used on EUV diagnostics in fusion devices due to particle bombardment.     

The interfacial properties of MgCl2 films grown on a flat SiO2/Si substrate. An XPS and ISS study

The interaction between MgCl₂ and SiO₂ was investigated by X-ray photoelectron spectroscopy (XPS), ion scattering spectroscopy (ISS) and contact potential difference (CPD) measurements. A thin SiO₂ layer was grown for this purpose on a Si(1 0 0) wafer and MgCl₂ was applied on this support at room temperature by evaporation under UHV conditions. It was found that magnesium chloride is deposited molecularly on the SiO₂ substrate, growing in layers and covering uniformly the oxide surface. The interaction with the substrate is initially very weak and limited to the interfacial layer. Above 623 K, most of the molecular MgCl₂ is re-evaporated and the interfacial interaction becomes stronger, as Mg-Cl bonds in the remaining sub-monolayer chloride break and Cl atoms desorb. This leaves on the surface sub-stoichiometric MgCl_x, which interacts with oxygen atoms from the substrate to form a complex surface species. At 973 K all Cl atoms desorb and Mg remains on the surface in the form of an oxide.