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对EAST中性束反向注入过程中等离子体加热和电流驱动进行了实验研究,并采用了美国普林斯顿大学等离子体物理实验室开发的TRANSP程序对高功率中性束注入过程中能量热输运进行了分析.结果表明,中性束注入可有效提高本底等离子体温度,产生束驱动非感应电流,提高等离子体旋转以及有效改善等离子体约束.     

5 MeV Proton irradiation effects on 200 GHz silicon–germanium heterojunction bipolar transistors

The total dose effects of 5?MeV proton and Co-60 gamma irradiation in the dose range from 1 to 100?Mrad on advanced 200?GHz Silicon–Germanium heterojunction bipolar transistors (SiGe HBTs) are investigated. The SRIM simulation study was conducted to understand the energy loss of 5?MeV proton ions in SiGe HBT structure. Pre- and post-radiation DC figure of merits such as forward- and inverse-mode Gummel characteristics, excess base current, DC current gain and output characteristics were used to quantify the radiation tolerance of the devices. The results show that the proton creates a significant amount of damages in the surface and bulk of the transistor when compared with gamma irradiation. The SiGe HBTs shows robust ionizing radiation tolerance even up to a total dose of 100?Mrad for both radiations.     

交流电桥的示波器测量方法

传统的交流电桥教学采用毫伏表,本文给出了一种采用示波器的电桥教学与测量方法,能更直观展示电桥的幅、相关系,有更好的教学效果。     

ZnO压敏陶瓷介电损耗的温度谱研究

利用Novocontrol宽频介电谱仪在-100—20 ℃温度范围内测量了ZnO-Bi₂O₃系压敏陶瓷的介电频谱,其频率范围为10^-2—10⁶ Hz. 研究表明： ZnO压敏陶瓷特征损耗峰的活化能分别为0.26和0.36 eV,结合实验条件、理论计算结果及其他现象的分析排除了特征损耗峰源于阴极电子注入、夹层极化和偶极子转向极化的可能.热刺激电流（TSC）谱共出现三个峰,其中高温峰对应于TSC实验加压过程引入的热离子极化,而中温峰和低温峰对应于介电损耗峰. 在分析的基础上,提出了ZnO压敏陶瓷的特征损耗峰起源于耗尽层内本征缺陷的电子弛豫过程. 关键词： ZnO压敏陶瓷 本征缺陷 介电谱 热刺激电流     

Branch Processes of Regular Magnetic Monopole

In this paper, by making use of Duan＇s topological current theory, the branch process of regular magnetic monopoles is discussed in detail. Regular magnetic monopoles are found generating or annihilating at the limit point and encountering, splitting, or merging at the bifurcation point and the degenerate point systematically of the vector order parameter field φ（x）. Furthermore, it is also shown that when regular magnetic monopoles split or merge at the degenerate point of field function φ, the total topological charges of the regular magnetic monopoles are stilI unchanged.     

Evolution of Spiral Waves in Excitable Systems

Spiral waves, whose rotation center can be regarded as a point defect, widely exist in various two-dimensional excitable systems. In this paper, by making use of Duan＇s topological current theory, we obtain the charge density of spiral waves and the topological inner structure of its topological charge. The evolution of spiral wave is also studied from the topological properties of a two-dimensional vector field. The spiral waves are found generating or annihilating at the limit points and encountering, splitting, or merging at the bifurcation points of the two-dimensional vector field. Some applications of our theory are also discussed.     

Study of eddy current power loss in an RCS vacuum chamber

In a Rapid Cycling Synchrotron (RCS), power loss due to an eddy current on the metal vacuum chamber would cause heating of the vacuum chamber. It is important to study the effect for estimating eddy current induced power loss and temperature growth. Analytical formulas for eddy current power loss for various types of vacuum chambers are derived for dipole and quadrupole repectively. By using the prototype of dipole of CSNS/RCS, an experiment was done to test the analytical formula. The derived formulas were applied to calculating the eddy current power loss on some special structures of an RCS vacuum chamber.     

Vortex pinning: A probe for nanoscale disorder in iron-based superconductors

The pinning of quantized flux lines, or vortices, in the mixed state is used to quantify the effect of impurities in iron-based superconductors (IBS). Disorder at two length scales is relevant in these materials. Strong flux pinning resulting from nm-scale heterogeneity of the superconducting properties leads to the very disordered vortex ensembles observed in the IBS, and to the pronounced maximum in the critical current density j_c at low magnetic fields. Disorder at the atomic scale, most likely induced by the dopant atoms, leads to “weak collective pinning” and a magnetic field-independent contribution j_c^coll. The latter allows one to estimate quasiparticle scattering rates.     

Electrical behavior of high resistivity Ce-doped BiFeO3 multiferroic

Bi_1+xCe_xFeO₃ (Ce–BFO) for x=0, 0.05, 0.1, and 0.15 monophasic ceramic samples were successfully synthesized by conventional solid-state reaction routes. The influences of Ce doping on structural, dielectric, ferroelectric, leakage current and capacitive properties of BiFeO₃ ceramics were investigated intensively. At higher concentrations of x (x=0.1 and 0.15) the samples showed good crystallinity with almost impurity free phases. No structural phase transformation took place after partial doping of Ce ions and all ceramic bulk samples remain in their rhombohedral structure with space group R3c. The dielectric behavior of the samples improved significantly and the ferroelectric hysteresis loops changed their shape from rounded to a strongly nonlinear typical ferroelectric feature mainly originating from the domain switching and became enhanced with increase in doping concentration of cerium (Ce). Experimental results also suggested that partial doping of higher valence, smaller ionic radius Ce ions in BiFeO₃ forces the reduction of oxygen vacancies, resulting in a great suppression of leakage current. It is found that the sharp capacitance peak/discontinuity present in the C–V characteristics of Ce–BFO for different Ce doping concentrations is directly associated with the polarization reversal. Incorporation of excess bismuth in the presence of Ce in BiFeO₃ is expected to compensate Bi loss during high temperature sintering and caused structural distortion which also favors enhancement of ferroelectric properties in Ce-doped BFO.     

经典单色短峰水波理论的三阶完备解

针对经典的有限水深三阶单色短峰波,考虑环境均匀流效应,赋予一新的解析解,从而与原经典解析解构成完备的解析解.这就在第二阶解、第三阶解结构上显示出多种相互作用机制.