Temporal evolution of optical path difference of a supersonic turbulent boundary layer

The density distribution of a supersonic turbulent boundary layer is measured with the nanoparticle-based planar laser scattering technique, and the temporal evolution of its optical path difference (OPD) in a short time interval is characterized by proper orthogonal decomposition (POD). Based on the advantage of POD in capturing the energy of a signal, a temporal evolution model is suggested for the POD coefficients of OPD. In this model, the first few coefficients vary linearly with time, and the others are modeled by Gaussian statistics. As an application, this method is used to compute the short-exposure optical transfer function.     

Effect of emitter layer doping concentration on the performance of silicon thin film heterojunction solar cell

A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15 nm)/a-Si:H(10 nm)/ epitaxial c-Si(47 μm)/epitaxial c-Si(3 μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot-wire chemical vapour deposition. The effect of the doping concentration of emitter layer S_d (S_d=PH₃/(PH₃+SiH₄+H₂)) on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with S_d increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at S_d = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm², a fill factor of 63.3%, and a conversion efficiency of 7.9%.     

原子层沉积氧化铝薄膜摩擦学性能研究

不同温度条件下,采用原子层沉积(ALD)技术在单晶硅基底表面制备了Al2O3薄膜.利用原子力显微镜观察了Al2O3薄膜的表面形貌和粗糙度,利用纳米压痕仪测定了薄膜的硬度,并通过UMT-2型往复摩擦磨损试验机(球-盘接触方式)考察了制备温度、载荷和对偶球对Al2O3薄膜的摩擦学性能的影响.结果表明:不同温度条件下制备得到的Al2O3薄膜的粗糙度不同;制备温度为100和200℃的Al2O3薄膜的摩擦性能较优;在所用载荷范围内,摩擦系数存在最低值;与不同对偶球对摩时,由于对偶球硬度不同,Al2O3薄膜呈现不同的摩擦磨损现象.     

斜投影-不展开薄层色谱法对废木料液化产物乙酰丙酸的过程分析

采用多波长薄层色谱扫描法,不经过传统的薄层色谱展开步骤实现混合体系的快速定量。废木料液化过程产物为混合体系,分别将不同液化反应时间点所取样品点样于硅胶板上。仅对液化过程终点的样本点进行一次展开,分离斜投影建模所需的反射光谱,切割出目标产物(乙酰丙酸)和背景光谱,构造斜投影算子;对其他液化过程中的样品点不展开,采集混合光谱,经斜投影算法分离出其中的目标产物纯光谱,从而实现定量。将该方法的定量结果与高效液相色谱法的定量结果对比,得到两种方法测定乙酰丙酸的相对误差小于3.27%,表明两种方法具有良好的一致性。     

Performance improvement of MEH-PPV:PCBM solar cells using bathocuproine and bathophenanthroline as the buffer layers

In this work, bathocuproine (BCP) and bathophenanthroline (Bphen), commonly used in small-molecule organic solar cells (OSCs), are adopted as the buffer layers to improve the performance of the polymer solar cells (PSCs) based on poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV): [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) bulk heterojunction. By inserting BCP or Bphen between the active layer and the top cathode, all the performance parameters are dramatically improved. The power conversion efficiency is increased by about 70% and 120% with 5-nm BCP and 12-nm Bphen layers, respectively, when compared with that of the devices without any buffer layer. The performance enhancement is attributed to BCP or Bphen (i) increasing the optical field, and hence the absorption in the active layer, (ii) effectively blocking the excitons generated in MEH-PPV from quenching at organic/aluminum (Al) interface due to the large band-gap of BCP or Bphen, which results in a significant reduction in series resistance (Rs), and (iii) preventing damage to the active layer during the metal deposition. Compared with the traditional device using LiF as the buffer layer, the BCP-based devices show a comparable efficiency, while the Bphen-based devices show a much larger efficiency. This is due to the higher electron mobility in Bphen than that in BCP, which facilitates the electron transport and extraction through the buffer layer to the cathode.     

Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures

The strain relaxation of an AlGaN barrier layer may be influenced by a thin cap layer above, and affects the transport properties of AlGaN/GaN heterostructures. Compared with the slight strain relaxation found in AlGaN barrier layer without cap layer, it is found that a thin cap layer can induce considerable changes of strain state in the AlGaN barrier layer. The degree of relaxation of the AlGaN layer significantly influences the transport properties of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is observed that electron mobility decreases with the increasing degree of relaxation of the AlGaN barrier, which is believed to be the main cause of the deterioration of crystalline quality and morphology on the AlGaN/GaN interface. On the other hand, both GaN and AlN cap layers lead to a decrease in 2DEG density. The reduction of 2DEG caused by the GaN cap layer may be attributed to the additional negative polarization charges formed at the interface between GaN and AlGaN, while the reduction of the piezoelectric effect in the AlGaN layer results in the decrease of 2DEG density in the case of AlN cap layer.     

Characteristics and properties of metal aluminum thin film prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology

Metal aluminum (Al) thin films are prepared by 2450-MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for thin-film preparation and annealing of as-deposited films related to the surface square resistivity. The square resistivity of as-deposited Al film is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structure analysis we conclude that the square resistivity is determined by neither contaminant concentration nor surface morphology, but by both crystallinity and crystal size in this process.     

Graphene films grown on sapphire substrates via solid source molecular beam epitaxy

A method for growing graphene on a sapphire substrate by depositing an SiC buffer layer and then annealing at high temperature in solid source molecular beam epitaxy (SSMBE) equipment was presented. The structural and electronic properties of the samples were characterized by reflection high energy diffraction (RHEED), X-ray diffraction Φ scans, Raman spectroscopy, and near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The results of the RHEED and Φ scan, as well as the Raman spectra, showed that an epitaxial hexagonal α-SiC layer was grown on the sapphire substrate. The results of the Raman and NEXAFS spectra revealed that the graphene films with the AB Bernal stacking structure were formed on the sapphire substrate after annealing. The layer number of the graphene was between four and five, and the thickness of the unreacted SiC layer was about 1--1.5 nm.     

考虑中性层位置变化的微悬臂梁气体传感器静态模型的分析

微悬臂梁是一种高灵敏度的生化传感器。本文考虑吸附表面应力引起的中性层位置的变化,采用能量法建立了微悬臂梁在单层分子吸附稳定后的静态弯曲模型,并以表面吸附有水蒸汽分子的微悬臂梁为例,研究了微悬臂梁曲率半径随其厚度、杨氏模量及吸附分子间距的变化规律以及中性层位置变化对微悬臂梁传感器性能预测的影响,结果发现：1)微悬臂梁的曲率半径与其杨氏模量、厚度及吸附分子间距之间可以近似用一次、二次和八次函数关系表示;2）中性层变化导致的曲率半径计算误差,随着微悬臂梁厚度、杨氏模量的增加而减小,但影响较小,而吸附分子间距会对该相对误差产生明显影响;3）中性层位置变化会对微悬臂梁传感器灵敏度和表面应变预测产生明显的影响。     

A COORDINATE TRANSFORMATION METHOD FOR NUMERICAL SOLUTIONS OF TRAVELING-WAVE ELECTROOMTIC FLOWS IN MICROCHANNEL

采用坐标变换法数值求解了耦合的Poisson-Nernst-Planck（PNP）方程和Navier—Stokes（NS）方程,研究二维狭窄微通道行波电场电渗流数值解．数值结果表明,坐标变换法能有效降低电渗流解数值解在双电层的高梯度,有效改善数值解的收敛性和稳定性．坐标变换的电渗流数值解和原始坐标下的数值解完全一致．坐标变换后采用简单的网格也能得到和原始坐标下复杂网格相同的解．给出了滑移边界的近似解与完整的PNP—NS数值解的比较．在双电层厚度与微通道深度比值（λ／H）很小的情况下（相对深通道）,两者的解基本一致．但在λ／H较大时（相对浅通道）滑移边界的解高于电渗流速度．