Comparative study on the inclusion behaviour of cyclodextrin derivatives with venoruton and rutin by thin layer chromatography

The interaction of rutin and venoruton (troxerutin), with alpha-, beta- and gamma-cyclodextrin (CD), hydroxypropyl-beta-cyclodextrin (HP-beta-CD) and methyl-beta-cyclodextrin (M-beta-CD) was investigated by reversed-phase thin layer chromatography on polyamide plates. A mobile phase consisted of NH(4)OH; NH(4)Cl buffer solution containing various CD concentrations (pH = 9.7, 20 degrees C) was used as mobile phase. The equilibrium constants (K(f)) and the retention factor (R(f)) were determined and used to study the inclusion process. The in fluence of CDs on the solubility of rutin and venoruton was characterized by R(M) values and the increasing hydrophilicity of drugs. The results show that the inclusion capacity of cyclodextrins follows the order HP-beta-CD > M-beta-CD > beta-CD > gamma-CD, and rutin is more easily included by the studied cyclodextrins than venoruton. In addition, the thermodynamic parameters (Delta H, Delta S) for the formation of complexes were obtained from the van't Hoff equation, displaying the enthalpy-entropy compensation effect.     

薄层层析法分离菊芋汁中低聚糖

采用薄层层析法(TLC)分离菊芋汁中的低聚糖成分。固定相为硅胶板GF254,展层剂为V正丁醇∶V异丙醇∶V乙酸∶V水=7∶5∶2∶4,显色剂为苯胺(4 mL)-二苯胺(4 g)-磷酸(20 mL)(溶于200 mL丙酮中)试剂。该展层体系可用于快速层析分离菊芋汁中的混合低聚糖,经过两次展层可达到良好分离结果。     

薄层色谱-紫外可见分光光度法测定食品中的苏丹红Ⅰ号

建立了测定食品中苏丹红Ⅰ号新方法:薄层色谱-紫外可见分光光度法.方法的线性回归方程为:A=0.00583 0.15105ρ,在0.50～10.0 μg/mL之间苏丹红Ⅰ号的浓度与吸光度之间呈线性关系,相关系数R=0.9992,检出限为0.05 μg/mL.测定结果与国家标准HPLC法对照,令人满意.可用于食品中苏丹红Ⅰ号的测定.     

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al₂O₃/TiO₂/HfO₂ dielectric-film-based metal–insulator–metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology and surface roughness of dielectric films for different materials and thicknesses are analyzed via atomic force microscopy (AFM). Among them, the 25 nm Al₂O₃-based dielectric capacitor exhibits superior comprehensive electrical performance, including a high capacitance density of 7.89 fF·µm⁻², desirable breakdown voltage and leakage current of about 12 V and 1.4 × 10⁻¹⁰ A·cm⁻², and quadratic voltage coefficient of 303.6 ppm·V⁻². Simultaneously, the fabricated capacitor indicates desirable stability in terms of frequency and bias voltage (at 1 MHz), with the corresponding slight capacitance density variation of about 0.52 fF·µm⁻² and 0.25 fF·µm⁻². Furthermore, the mechanism of the variation in capacitance density and leakage current might be attributed to the Poole–Frenkel emission and charge-trapping effect of the high-k materials. All these results indicate potential applications in integrated passive devices.     

缓冲层ZnPc对有机电致发光器件特性的影响

本文研究了酞菁锌(ZnPc)薄膜的表面形貌及ZnPc薄膜作为缓冲层对有机电致发光器件(OLEDs)光电特性的影响.对比两组样品的AFM图像,ZnPc薄膜相比于ITO薄膜,其表面的岛面积较大,薄膜表面更连续平整,基本上覆盖了ITO膜表面针孔,减少了表面的缺陷.另外,ZnPc薄膜的岛分布均匀有序.使用ZnPc作为缓冲层的器件性能明显好于未使用ZnPc修饰的器件,在7.42V的驱动电压下的最大发光亮度达到1.428kcd/m2,在4.3V电压驱动下时,最大光功率效率为1.411m/W;而未使用缓冲层的器件在8V的驱动电压下达到最大发光亮度达到1.212kcd/m2,在5.5V电压驱动下时,最大光功率效率为0.931m/W.     

用化学溶液方法在Ni-5at%W基底上制备La2Zr2O7过渡层的研究

La2Zr2O7(LZO)过渡层以其独特的物理化学性质越来越受到人们的关注。本文以乙酰丙酮镧和乙酰丙酮锆为前驱盐,丙酸为溶剂配置前驱液,用化学溶液方法(CSD)在具有立方织构的Ni-5at%W基底上制备了LZO过渡层薄膜。研究了前驱液成分、性质以及退火温度对LZO成相以及取向的影响。用常规XRD和X射线四环衍射仪分析了LZO薄膜的相成分和织构。结果显示,在1050℃下退火可以获得强立方织构的LZO薄膜,其中(222)峰的Phi扫描半高宽值为8.95°;(400)峰的Chi扫描半高宽值为6.8°。用高分辨扫描电子显微镜(FE-SEM)观察到LZO薄膜表面均匀致密,没有裂纹和空洞。     

复合材料单层板损伤分析

研究了复合材料单层板在远场均匀拉应力作用下，基体中微裂纹损伤，利用Ⅰ、Ⅱ型复合裂纹应力强度因子，分析了沿裂纹面的拉伸型损伤变量和剪切型损伤变量，应用能量释放率的概念建立了损伤条件下的应力应变关系，并给出了正交各向异性单向层板在损伤条件下的有效偏轴柔度系数计算公式。通过算例分析可知，由于复合材料单层板中微裂纹的存在，有效偏轴柔度系数S‘11和S‘61增大，而S‘21减小。     

发动机机油滤清器虑层强度分析及优化

针对机油滤清器工作工况下进出口压差、机油滤层强度及导流桩高度等问题, 通过试验测试与仿真相结合, 对滤清器初步设计进行了评估及优化, 以确保滤清器在工作工况下进出口压降及滤层强度能满足要求. 首先进行滤层性能试验, 得到滤层的惯性阻力系数和黏性阻力系数; 再通过滤层多孔介质CFD分析, 对滤清器进出口压降进行分析计算. 结果表明: 在-18℃、25℃和70℃的工况下, 进出口压降都小于10kPa, 满足相关要求. 针对滤层的最大主应力超过其抗拉强度的问题, 通过CAE仿真分析, 优化滤层与导流桩间隙, 将滤层最大主应力由110.1MPa降至36.99MPa, 小于其抗拉强度42.8MPa.     

ZnO-Si不同退火条件对生长ZnSe薄膜的影响

研究了作为缓冲层的ZnO薄膜在不同的退火时间、退火温度下退火对Si衬底上生长ZnSe膜质量的影响。当溅射有ZnO膜的Si(111)衬底的退火条件变化时，从X射线衍射谱（XRD）和光致发光谱（PL）中可见，ZnSe(111)膜的晶体质量有较大的变化。变温的PL谱表明，Si衬底上生长的具有ZnO缓冲层的ZnSe膜的近带边发射峰起源于自由激子发射。