Interface contact and modulated electronic properties by external vertical strains and electric fields in graphene/MoS2 heterostructure

Based to the first-principles calculations, we study the electronic properties of graphene/MoS₂ heterostructure by modulating the vertical strains and applying external electric field. Graphene/MoS₂ heterostructure is a van der Waals heterostructure (vdWH) with the interlayer spacing is 3.2 Å for the equilibrium state, and the contact property of the interface is n-type Schottky contact. The Schottky barrier height (SBH) changes with vertical strains which induces a change of charge transfer between graphene and MoS₂ layer. In addition, with strain or without strain, the applied positive electric field can effectively promote the charge transfer from graphene to MoS₂, while the negative electric field has the opposite effect. These findings support for the design of field effect transistors based on graphene vdWHs.     

Power Supply and Programmable Controller for Multishot Pellet Injector

MPI（multishot pellet injector） was imported from Russia about ten years ago. During the year＇s operation in HL-1M, most electrical equipments were repaired. Since the components are non-standard, so it is difficult to maintain. To fueling experiment meet the requirement of in HL-2A. The power supplies of fast valve and a programmable controller for shooting pellets were developed.     

Commercial SiC device processing: Status and requirements with respect to SiC based power devices

SiC power devices have been commercially available since 2001. In the meantime the standard wafer diameter increased from 2″ to 3″ and a lot of processes which are needed for SiC device technology and which have not been standard in Si device fabrication (e.g. rapid thermal annealing of metal layers, stepper lithography for 3″ etc.) have now found a place in the list of common processes. On the other hand there are still processing issues or process steps that are not yet solved satisfactorily or not yet fulfilling the standards set in the production of Si devices. After a short introduction about the application and market of SiC power devices the paper will present a brief status of today’s productive SiC device processing. This part will mainly focus on Schottky diode manufacturing which is currently the only SiC power device produced in significant amounts. In a second part the paper will focus on remaining issues like wafering, availability of defect density monitoring, ohmic contact formation, high quality substrates and epi, oxidation, and post implantation annealing. All topics will be related to the needs resulting from an industrial point of view concerning process stability, influence on device costs, quality and on commercialization. The paper concludes that the major tasks to be attacked are the quality and price of substrates and epitaxial layers. Other technical issues are ranked behind those.     

Embedding atom-jellium model for metal surface

To describe metal surfaces efficiently and accurately, an embedding atom-jellium model is proposed. Within density functional theory, we consider a multiscale scheme that combines jellium and atomistic approaches. We use the former to model layers deep inside a metal surface to reduce the computational cost and the later to maintain the accuracy required for chemical bonding. Work functions of Al(111) and Cu(111) surfaces are studied using this model with comparisons to all-atom and pure jellium models. The much closer results of the embedding atom-jellium model to the all-atom results than to the pure jellium results show a good prospect for our approach in large-scale density functional calculations.     

The affine deformation space of a rank two Schottky group: a picture gallery

The Margulis invariant of an affine hyperbolic element measures the signed Lorentzian displacement along the unique closed geodesic in its class. Given a group of affine transformations of Minkowski spacetime whose linear part is Schottky, the Margulis invariant is a useful tool in determining properness of its action. This paper, based on a presentation given at CGG IV Oostende 2005, describes the affine deformation space of a rank two Schottky group. Several illustrations are included, contrasting the difference between the case of a three-holed sphere and that of a one-holed torus. Paper based on a presentation given at CGG IV Oostende 2005. Attendance of the conference and the subsequent writing of this paper was made possible by an NSERC Discovery Grant.     

Dynamical r-Matrices for Hitchin's Systems on Schottky Curves

We express Hitchin's systems on curves in Schottky parametrization, and construct dynamical r-matrices attached to them.     

Solar cells

Solar cells are based on the photovoltaic effect of converting solar energy into electric energy. The mechanism for solar cells is divided into steps, that is, electron-hole pair generation by absorption of light in semiconductors, separation of electron-hole pairs by built-in potential, electron-hole recombination, collection of charge carriers by metal electrodes, etc. In this article, the principle and the theories of these basic steps are presented. On the basis of these steps, methods to improve the efficiency for solar cells are discussed. The fabrication process and the situation of currently produced solar cells are also presented. Solar cells having no p-n junction, that is, photoelectrochemical solar cells and MIS solar cells, are discussed from the perspective of low-cost solar cells.     

Investigation of a heterodyne receiver with open structure mixer at 324 GHz and 693 GHz

The performance of a submillimeter heterodyne receiver using an HCOOH laser local oscillator and an open structure mixer with a Schottky barrier diode has been optimized for 693 GHz. Working at room temperature a single sideband (SSB) system noise temperature of 7,300 K, a mixer noise temperature of 6,100 K and a conversion loss of 12 dB has been achieved. The same receiver system has been investigated at 324 GHz using an HCOOD laser local oscillator yielding a noise temperature of 3,100 K (SSB), a mixer noise temperature of 2,400 K (SSB) and a conversion loss of 10 dB (SSB). An acousto-optical spectrometer has also been constructed, with 1024 channels and a channel-bandwidth of 250 kHz. The system NEP per channel was 2.5×10^–17 W/Hz^1/2 at 324 GHz and 5.0×10^–17 W/Hz^1/2 at 693 GHz.     

基于等离激元热电子调控的全谱光催化产氢增强（英文）

等离激元效应在光催化体系中的集成为实现广谱光吸收提供了一个新的途径,然而等离激元热电子的较低迁移率和不确定扩散方向使得其光催化效率仍较低.等离激元金属与n型半导体接触后,其界面间会形成肖特基结.在特定波长太阳光照射下,等离激元金属将其表面等离子体能量聚集在表面自由电子上,进而产生热电子.当这些热电子具有的能量高于肖特基势垒时,热电子便可注入到半导体导带上.与此同时,半导体上的电子可以通过肖特基接触发生回流,与金属上的空穴复合,进而降低半导体-等离激元金属复合材料的光催化性能.因此,为了提高光催化效率,如何调控等离激元热电子迁移和充分利用等离激元效应是一个重要挑战.本文尝试将"表面异质结"与肖特基结相结合的复合结构,得以有效地调控等离激元热电子的迁移.在该复合结构中,金纳米颗粒和铂纳米颗粒分别作为等离激元吸光单元和助催化剂,集成在TiO_2纳米片表面.其中"表面异质结"是由TiO_2纳米片的两种不同表面晶面所构成,我们选择由{001}和{101}两组晶面组成的TiO_2纳米片作为半导体衬底.该结构中的{001}晶面导带能级高于{101}导带能级,因而电子由高能级的{001}流向低能级的{101}晶面,可以用来引导等离激元热电子从可见光响应的金纳米颗粒向TiO_2进行高效转移.通过巯基丙酸的桥联作用,将等离激元Au纳米颗粒锚定在TiO_2纳米片的{001}晶面上,获得Au-TiO_2{001}样品.另一方面,利用TiO_2纳米片自身光生电荷导向性光沉积,得到与{101}晶面结合形成的Au-TiO_2{101}样品.我们对两组样品进行光电流和光催化产氢实验对比,确认在"表面异质结"诱导下Au-TiO_2{001}样品中Au产生的光生热电子可以更好地注入到TiO_2纳米片导带上.我们进一步通过光沉积Pt纳米颗粒来判定光生电子所能到达的区域,验证了以上结论.与此同时,肖特基结由铂纳米颗粒与TiO_2纳米片所形成,可以促使电子由TiO_2向铂纳米颗粒进行转移,而避免发生向金纳米颗粒的反向迁移,从而在Au-TiO_2体系中实现高效的单向载流子转移.基于该设计,等离激元光催化剂实现了明显改善的全谱光催化产氢性能.本文为全谱光催化的复合结构理性设计提供了一个新的思路.