Eu2+掺杂MgY2Al3Si2O11N青光荧光粉的制备和发光性能

采用高温固相法合成了一系列Eu²⁺掺杂的MgY²Al³Si²O¹¹N(MYASON)青光荧光粉。详细探讨了不同制备方法对荧光粉的物相结构和发光强度的影响,利用X射线衍射精修和X射线光电子能谱实验证明Si⁴⁺-N^3-离子对成功掺入石榴石晶格中。通过荧光光谱、寿命衰减曲线和变温光谱研究了发光性能,研究结果表明,用365 nm紫外光激发MYASON∶Eu²⁺荧光粉时,在青光区域呈现不对称宽带发射,峰值为490 nm,可以为紫外芯片激发的白光发光二极管有效提供青光成分。     

Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors

Titanium dioxide (TiO₂) thin films were deposited onto p‐Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80–200 W. The as‐deposited TiO₂ films were annealed at a temperature of 1023 K. The post‐annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO₂/p‐Si structure were determined from the capacitance–voltage and current–voltage characteristics. X‐ray diffraction studies confirmed that the as‐deposited films were amorphous in nature. After post‐annealing at 1023 K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers > 160 W showed the mixed anatase and rutile phases of TiO₂. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air‐annealed Al/TiO₂/p‐Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO₂/p‐Si (metal‐insulator‐semiconductor) was systematically investigated. Copyright © 2014 John Wiley & Sons, Ltd.     

UV/Vis-LED激发的香豆素吡啶鎓盐光引发剂的合成及性能

设计合成了3种基于香豆素骨架的紫外-可见发光二极管(UV/Vis-LED)可激发的新型吡啶鎓盐光引发剂, 并研究了这3种香豆素吡啶鎓盐的构效关系及其作为单组分自由基光引发剂在丙烯酸酯体系中的光引发活性. 紫外-可见吸收光谱分析表明, 这3种香豆素吡啶鎓盐在300~400 nm区域有较强吸收. 在LED@365 nm和LED@405 nm光源辐照下, 研究了3种光引发剂的稳态光解和光聚合动力学. 研究表明, 这3种香豆素吡啶鎓盐光引发剂在相应光辐照下都具有较好的光解速率. 此外, 3种光引发剂对丙烯酸酯都具有较好的引发活性. 构效关系研究表明, 吡啶环4号位引入推电子的甲氧基会使其引发丙烯酸酯单体聚合的活性降低; 而引入吸电子的乙酰基会使其引发丙烯酸酯单体聚合的活性增加. 差示扫描量热(DSC)实验表明, 此类吡啶鎓盐光引发剂具有较好的热稳定性. 当3种光引发剂与丙烯酸单体混合时可提升体系的热稳定性; 通过电子自旋共振(ESR)证明了活性物种的产生, 并对该类引发剂的引发机理进行了探讨.     

Crosslinking Super Yellow to produce super OLEDs: Crosslinking with azides enables improved performance

An increasing number of organic light-emitting diodes (OLEDs) is nowadays based on the use of polymers as the emissive material. For this material class in particular, solution-processing of the OLEDs has gained traction in both research and industry. However, in order to access multilayer material systems, orthogonal solvents must be used to prevent dissolution of previously prepared layers. The use of crosslinkers can facilitate this production method by reducing the number of orthogonal solvents needed since insoluble networks are generated. In this work, a novel bisazide crosslinker is employed to insolubilize Super Yellow, a polyphenylene-vinylene emitter. This allows the use of an additional poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine electron blocking layer (EBL) from the same solvent. Devices including the blocking layer show improved efficacies compared to reference devices without the additional EBL, while also maintaining the emission spectrum. Using the upscalable technique of doctor blading, OLEDs were fabricated which showed a particularly noticeable effect of the blocking layer with a nearly twofold increase in luminance and a 56% increase in current efficacy.     

Twisted Phenanthro[9,10-d]imidazole Derivatives as Non-doped Emitters for Efficient Electroluminescent Devices with Ultra-Deep Blue Emission and High Exciton Utilization Efficiency

Herein, two deep-blue emissive molecules ( SAF-PI and SAF-DPI ) are designed and synthesized using spiro[acridine-9,9’-fluorene] as a donor (D) substituted with 2-(3-methylphenyl)-1-phenyl-phenanthro[9,10-d]imidazole as an acceptor (A), forming twisted D−A and A−D−A structures, respectively. The photophysical studies and density functional theory (DFT) calculations reveal that both molecules exhibit hybridized local excited and charge transfer (HLCT) characteristics with deep blue emission color. They are effectively applied as non-doped emitters in OLEDs. Particularly, SAF-PI -based device achieves the high-definition television (HDTV) standard blue color emission peaked at 428 nm with CIE coordinate of (0.156, 0.053), a narrow full width at half maximum of 55 nm, a maximum external quantum efficiency (EQE_max) of 4.57% and an exciton utilization efficiency of 65%.     

Enhanced Static Modulated Fourier Transform Spectrometer for Fast Approximation in Field Application

We discuss the data sampling frequency, the spectral resolution, and the limit for non-aliasing in the static modulated Fourier transform spectrometer based on a modified Sagnac interferometer. The measurement was performed in a very short 4 ms, which is applicable for real time field operation. The improved spectrometer characteristics were used to investigate the spectral properties of an InGaAs light emitting diode. In addition, The measured spectral peak was shifted from 6420 cm⁻¹ to 6365 cm⁻¹, as the temperature increased from 25 °C to 40 °C, when the operating current is fixed to be 0.55 A. As the applied current increased from 0.30 A to 0.55 A at room temperature, the spectral width was broadened from 316 cm⁻¹ to 384 cm⁻¹. Compared to the conventional Fourier transform spectrometer, the measured spectral width by the static modulated Fourier transform spectrometer showed a deviation less than 10%, and the spectral peak shift according to the temperature rise showed a difference within 2%.     

Harvesting vibrations via 3D phononic isolators

We report on the existence of unidirectional phononic band gaps that may span over extended regions of the Brillouin zone and can find application in trapping elastic (acoustic) waves in properly designed multilayered 3D structures. Phononic isolators operate as a result of asymmetrical wave transmission through a slab of a crystallographic phononic structure with broken mirror symmetry. Due to the use of lossless materials in the crystal, the absorption rate is dramatically enhanced when the proposed isolator is placed next to a vibrational harvesting cell.     

用于宽谱带发射白色发光二极管的黄色荧光粉Sr8MgAl(PO4)7∶xEu2+的制备及发光性能

通过高温固相反应合成了一系列宽谱带发射黄色荧光粉Sr_8MgAl(PO_4)_7∶x Eu~(2+)(SMAP∶x Eu~(2+)),并对其物质结构、发光性能及其在白色发光二极管(WLED)领域的应用进行了探究。X射线衍射(XRD)测试结果表明,SMAP∶x Eu~(2+)系列荧光粉具有单斜结构和C2/m空间群,激活剂Eu~(2+)离子能够很好地进入SMAP基质中并占据Sr~(2+)离子的晶格位点。漫反射光谱分析显示SMAP基质属于宽带隙材料,带隙宽度为3.60 e V。此外,SMAP∶x Eu~(2+)具有较宽的激发范围(280～500 nm),对应于Eu~(2+)离子的4f~7→4f~65d~1跃迁;在380 nm近紫外光激发下,呈现出450～800 nm的多发光中心的非对称黄光发射,发射峰位于590 nm处。基于高斯多峰拟合结果,得到3个发光中心,分别位于528、600和680 nm。最后,将已制备的黄色荧光粉SMAP∶0.05Eu~(2+)与商业化蓝粉Ba Mg Al_(10)O_(17)∶Eu~(2+)混合涂覆到400 nm芯片上制得色温较好(3 344 K)、显色指数较高(90.1)的WLED。     

In-plane ESPI using an achromatic interferometer with low-coherence laser source

The use of an achromatic interferometer is explored as a means of doing in-plane ESPI measurements using a laser diode as the light source. This interferometer type, which uses a diffraction grating in place of the conventional beamsplitter, has two features that make it suitable for making ESPI measurements over extended areas, even when using a low-coherence laser diode source. First, the parallelogram optical geometry of the interferometer causes all rays passing through to have the same optical path lengths. Second, the interferometer is achromatic, whereby the piezo-actuated mirror that steps the illumination light does so by the same phase angle, independent of wavelength. This latter feature accommodates the spectral impurity of a laser diode source. A periodic variation of fringe visibility is observed in experiments, where narrow ranges of high visibility occur at regular spatial intervals. This behavior derives from the clustered discrete spectral character of laser diode light output. A method to “tune” the interferometer by slightly rotating the diffraction grating is described so as to achieve consistent high fringe visibility throughout the measured images.