二极管激光侧泵浦单横模100Hz电光调Q激光器

介绍了二极管激光侧泵浦单横模１００Ｈｚ电光调Ｑ激光器的实验结果。泵浦源为一个线阵准连续１００Ｗ二极管激光器，激光工作介质为ＮｄＹＡＧ薄梯形板条，板条与泵浦源间用柱透镜耦合，ＫＤ＊Ｐ电光晶体调Ｑ。在１００Ｈｚ重复频率下，获得单脉冲能量２．３７ｍＪ，脉宽小于７ｎｓ，光束质量因子Ｍ２＝１．１的１．０６μｍ激光，光－光效率为８．５％，斜效率为１８．７％。     

激光二极管自混合干涉和微振动的实验观测

介绍了利用LabView软件虚拟示波器和信号源,对激光二极管自混合干涉和微振动进行的实验观测.该实验可以作为本科低年级学生的综合设计实验.     

Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities

Physical aspects of an operation of the GaAs-based InGaAs/GaAs quantum-well (QW) VCSELs with the intentionally detuned optical cavities have been considered in the present paper using the comprehensive three-dimensional self-consistent optical–electrical–thermal-gain simulation. In GaAs-based structures, very good DBR resonator mirrors and a very efficient methods to confine radially both the current spreading and the electromagnetic field with the aid of oxide apertures may be applied. It has been found using the above simulation that even currently available immature technology enables manufacturing the above devices emitting radiation of wavelengths over 1.20 μm. In particular, while the room-temperature 1.30-μm lasing emission is still beyond possibilities of the InGaAs/GaAs QW VCSELs, these structures may offer analogous 1.25-μm emission, especially for the high-power and/or high-temperature operation.     

Resonant-cavity-enhanced photodetectors and LEDs in the mid-infrared

In this paper we outline the use of resonant-cavity enhancement for increasing the exterior coupling efficiency of photodetectors and light-emitting diodes (LEDs) in the mid-infrared (MIR) spectral region. This method is potentially very important in the MIR because encapsulation is not presently feasible due to the lack of suitable materials. Among other potential applications, resonant-cavity-enhanced (RCE) photodetectors and LEDs could be particularly suitable for greenhouse gas detection because of their ‘pre-tunable’ spectrally narrowed resonantly enhanced peaks. We also present the optical characterization of an InAs RCE photodetector aimed at the detection of methane gas (λ≈3.3 μm), and an InAs/InAs_0.91Sb_0.09 resonant-cavity LED (RCLED) aimed at carbon dioxide gas (λ≈4.2 μm). The high peak responsivity of the RCE photodetector was 34.7 A/W at λ=3.14 μm, and the RCLED peaked at λ=3.96 μm. These are among the longest operating wavelengths for III–V RCE photodetectors and RCLEDs reported in the literature.     

固体激光器的灯泵浦和二极管泵浦方式比较

对固体激光器的灯泵浦和二极管泵浦方式进行了比较,详细分析了不同类型的固体激光器所适用的泵浦方式.指出二极管泵浦固体激光器是今后固体激光器的发展趋势.     

10瓦级双包层光纤激光器

考虑到所用大功率激光二极管的光谱特性，对光纤激光器的基本法布里-珀罗腔型稍加改变，研制出激光二极管抽运的10w级双包层光纤激光器，获得最高功率为11．8w、波长1100mm的单模激光输出。     

电子束装置运行稳定性的测量

 为了验证电子束装置的稳定性,分别对电流波形、电压波形进行了多次测量,对二极管放电时注入腔中电子均匀性进行了探测,最后改变二极管真空度测量了泵浦氩的荧光 谱的稳定性。     

自集成透镜InGaAsP／InPDHLED及其离子束铣技术

本文报道在国内首次采用离子束铣技术研制自集成透镜InGaAsP/InP DH LED的实验结果。采用烘烤正性光致抗蚀剂来形成球状掩膜适合于离子束铣,且重复性很好。为了获得光洁的刻蚀表面,刻蚀条件均已最优化。     

ICTS measurements for p-GaN Schottky contacts

High-temperature isothermal capacitance transient spectroscopy (H-ICTS) measurements were conducted to characterize near mid-gap defects, which are the origin of the memory effect in Ni/p-GaN Schottky contacts. A large single peak was detected only under the forward bias conditions. This indicates that the defects were located in the vicinity of the interface. The change of the peak height and position of the ICTS curves under various bias conditions were qualitatively interpreted by the distribution of the defects and the current flow effect.     

一种新型有机电致微腔结构的双模发射

采用结构Glass／DBR／ITO／NPB／NPB：Alq／Alq／Al制作了有机微腔电致发光器件。将空穴传输材料与发光材料以一定比例混合作为发光层，为了便于对比，在不改变有机层的膜厚的情况下同时制作了传统的异质结微腔器件，发现两种器件的发光光谱有很大不同，器件的复合效率与传统的异质结器件相比也得到了很大提高，这是因为将两种有机材料混合能消除界面势垒，提高器件的复合效率，从而提高了器件的发光性能，实现了微腔双模发射，且两个模式的半峰全宽分别为8nm和12nm。通过进一步优化器件结构可以实现微腔白光发射。