Mössbauer effect study of the decagonal quasicrystal Al65Co15Cu20

The ⁵⁷Fe Mössbauer effect study at 5.0 K and in an external magnetic field of 9.0 T on a high-quality stable decagonal quasicrystal Al₆₅Co₁₅Cu_19.9Fe_0.1 is presented. It is shown that the iron atoms are located in two distinct classes of sites. The values of the principal component of the electric field gradient tensor and the asymmetry parameter at these sites are, respectively, ?1.90(10)?×?10²¹ V/m², 0.97(15) and ?3.95(12)?×?10²¹ V/m², 0.00(17).     

Mossbauer investigations of corrosion environment influence on Fe valence states in oxide films of zirconium alloys

Mössbauer investigations about iron atom redistribution in oxide films of zirconium alloys subjected to corrosion at 500°C in pure oxygen and water pair have been analysed. The alloys were also subjected to autoclave conditions at a pressure of 10.0 MPa and autoclave conditions at 350°C and at a pressure of 16.8 MPa, using distilled water and water with additives of lithium and fluorine. It is shown that, depending on the corrosion environment, various compounds of iron, such as α-Fe₂O₃, Fe₃O₄, and FeO, as solid solutions of iron in ZrO₂ are formed in oxide films.     

Photoelectron spectroscopy study of Pb/Ag(1 1 1) in the submonolayer range

The vacuum deposition of Pb onto Ag(1 1 1) gives rise to two different surface structures depending on coverage and deposition temperature. At room temperature (RT), low energy electron diffraction (LEED) reveals a sharp reconstruction completed at 1/3 Pb monolayer (ML). Beyond, a close-packed Pb(1 1 1) incommensurate overlayer develops. At low temperature (LT, ∼100 K) the incommensurate structure is directly observed whatever the coverage, corresponding to the growth of close-packed two-dimensional Pb(1 1 1) islands. Synchrotron radiation Pb 5d core-level spectra clearly demonstrate that in each surface structure all Pb atoms have essentially a unique, but different, environment. This reflects the surface alloy formation between the two immiscible metals in the reconstruction and a clear signature of the de-alloying process at RT beyond 1/3 ML coverage.     

CrO2块体及其(0 0 1)和(1 0 0)表面的电子结构和磁性质

基于密度泛函理论的第一性原理计算,我们研究了CrO2块体以及其(1 0 0)和(0 0 1)表面的磁性和电子结构。CrO2(1 0 0)表面中表面层Cr原子向内收缩,而(0 0 1)表面中的表面层Cr原子却向外伸展;越往内层,原子驰豫幅度越小。由于表面效应。表面层原子的磁矩有了大幅的提升,其中(1 0 0)表面中表面层Cr原子的磁矩最高,为3.03μB。电子结构计算表明,CrO2 (1 0 0)和(0 0 1)表面均保持了块体中良好的半金属性,并且半金属带隙在(1 0 0)表面中受到了进一步的拓宽,因此具有更稳定的半金属性     

High-throughput concept for tailoring switchable mirrors

The optical properties, the switching kinetics and the lifetime of hydrogen switchable mirrors based on Mg-Ni alloys are determined with particular regard to the composition of the optically active metal-hydride layer in combination with the thickness of the catalytic capping layer. For this, a high-throughput experiment is introduced. The switching kinetics and the reversibility of switchable mirrors are strongly thickness dependent, though the details hinge on the fine structure of the clustered capping layer. Therefore, the kinetics is correlated with the surface structures of Pd on Mg_yNi_1−y as investigated by scanning tunneling microscopy. The results are explained by the so-called strong metal-support interaction (SMSI) state, characterized by a complete encapsulation of the capping layer clusters by oxidized species originating from the support. The SMSI-effect is less important with increasing Pd-layer thickness, and is suppressed by a good wetting of the Pd-clusters on the optically active film. This explains the critical thickness for the catalyzed hydrogen uptake observed in many switchable mirror systems. Moreover, the degradation of the kinetics during cycling is found to depend on the Pd-layer thickness and on the gas environment. Only films, covered with at least 15 nm Pd, show small degradation caused by the SMSI-effect. The SMSI-effect is partly reversible: after changing the gas environment from hydrogen to oxygen, the oxide on the Pd-clusters can be partly removed.     

CuCrZr合金质子辐照效应的模拟研究

基于Monte Carlo方法,跟踪一大批入射粒子的运动,模拟1~10 Me V质子辐照下质子与CuCrZr合金的相互作用,计算出合金的阻止本领、能量传递、能量损失、射程、空位分布情况以及合金的辐照损伤分别与辐照深度、质子能量的关系,通过模拟CuCrZr合金在聚变反应中的工作环境,分析热沉材料的失效机理.研究结果表明:质子能量在1~10 Me V时,质子与CuCrZr合金发生非弹性碰撞,能量损失以电离能损失为主,表现出很好的抗辐照性能;质子在合金中的峰值深度随质子能量增加而增加,且近似指数关系,峰值深度为2~250μm;入射质子能量达到Me V级别时,溅射产额为零,CuCrZr合金可以很好的避免器壁的侵蚀;合金中空位的个数与入射质子能量呈线性关系,合金中空位和质子在合金中的分布具有同步性;质子损伤效率在合金深度方向呈现高斯分布,损伤最大值位置与辐照深度接近,随着入射质子能量的增加损伤效率最大值不断减小.     

Phase transition and pitting corrosion behaviour for Mo—implanted aluminium

Molybdenum ions are implanted into aluminium with high ion flux and high dose at elevated temperatures of 200℃, 400℃ and 500℃. Due to the high temperature and high flux of vacancies and interstitial atoms, the atom diffusion and chemical effects are enhanced during the ion implantation. The effects increase with increasing ion flux and dose, so that new phase formation and phase transition emerge noticeably. X-ray diffraction analysis shows that when the aluminium is implanted with Mo ions at a low ion flux (25μA/cm²), the Al₅Mo alloy is formed. The atomic ratio of Mo/Al of the Al₅Mo phase is close to 20%. When the aluminium is implanted with Mo ions at a high ion flux (50μA/cm²), the phase transition from Al₅Mo to Al₁₂Mo appears, and the latter is dominant, which is determined to be the final phase. The ratio of Mo/Al in Al₁₂Mo is 7.7%. Rutherford backscattering spectroscopy indicates also that the Mo/Al atom ratio is ～7% to ～8% in Mo-implanted aluminium. The atomic ratios of the constituents in Al₅Mo and Al₁₂Mo are of stoichiometric composition for these alloys. The thicknesses of the Al₁₂Mo alloy layers for Mo-implanted Al with ion doses of 3×10¹⁷/cm² and 1×10¹⁸/cm² are 550nm and 2000nm, respectively. The pitting corrosion potential V_p increases obviously. It is clear that due to the formation of Al₁₂Mo alloy layer, the pitting corrosion resistance is enhanced.     

STM/AFM studies of the evolution of morphology of electroplated Ni/W alloys

The surface morphology evolution of Ni/W alloys was studied, as a function of the alloy composition. Using the modified plating baths developed in our laboratory recently, electroplated Ni/W alloys with different W content, in the range of 7–67 atom percent (a/o), can be obtained. This was found to lead to different structures, ranging from polycrystalline fcc-Ni type structure to amorphous, followed by orthorhombic with increasing W content in the alloy. Powder XRD was studied to determine the crystal structures. Ex situ STM, AFM and SEM were used to study in detail the surface morphologies of the different alloys, and their evolution with increasing W content.

The important findings are that a mixture of two crystalline forms can give rise to an amorphous structure. Hillocks that are usually a characteristic of epitaxial growth can also exist in the amorphous alloys. Oriented scratches caused by stress can also be formed.

Up to 20 a/o of W is deposited in the alloys in crystalline form, with the fcc-Ni type structure. Between 20 and about 40 a/o an amorphous structure is observed, and above that an orthorhombic crystal structure is seen, which is characteristic of the NiW binary alloy. Careful choice of the composition of the plating bath allowed us to deposit an alloy containing 67 a/o W, which corresponds to the composition NiW₂.     

光电直读光谱法测定稀土铝合金中La,Ce,Pr,Nd,Sm ,Si,Fe,Cu

本文报道了稀土铝合金中La,Ce,Pr,Nd,Sm,Si,Fe,Cu的光电直读光谱测定，对光源的激发方式及最佳工作条件进行了选择，应用KH－5高能预火花光源，采用单向全功率放电，先冲洗3秒，然后预燃5秒，曝光10秒。各元素谱线间无干扰，。使用固体试样，样品处理简单。经试验验证该法简便快速，精密度准确度高，含量在0．001％－0．002％之间RSD＜6％，0．02％－0．3％之间RSD＜3％，标准样品的测定值与准确值吻合较好，结果令人满意。     

The improvement of InAs/GaAs quantum dot properties capped by Graphene

InAs self‐assembled quantum dots (QDs) were grown by molecular beam epitaxy on (001) GaAs substrate. Uncapped and capped QDs with GaAs and graphene layers were studied using atomic force microscopy and Raman spectroscopy. Graphene multi‐layer was grown by chemical vapor deposition and transferred on InAs/GaAs QDs. It is well known that the presence of a cap layer modifies the size, shape, and density of the QDs. According to the atomic force microscopy study, in contrast to the GaAs capped sample, which induce a dramatic decrease of the density and height of dots, graphene cap layer sample presents a slight influence on the surface morphology and the density of the islands compared with the uncapped one. The difference shown in the Raman spectra of the samples is due to change of strain and alloy disorder effects on the QDs. Residuals strain and the relaxation coefficients have been investigated. All results confirm the best crystalline quality of the graphene cap layer dots sample relative to the GaAs capped one. So graphene can be used to replace GaAs in capping InAs/GaAs dots. To our knowledge, such study has not been carried out until now. Copyright © 2013 John Wiley & Sons, Ltd.