Laser-induced temperature dependent triplet state lifetime of rubreneperoxide

A number of photophysical properties of three different types of rubreneperoxides have been measured experimentally by flash spectroscopy technique, including the two-photon absorption, fluorescence, delayed fluorescence and temperature dependent triplet-triplet absorption spectra. Excited singlet and triplet state lifetimes are temperature dependent. Lowest triplet state lifetimes were measured from 77 K to 50 degrees C. Experimental observations showed that as we decreased the temperature of rubreneperoxides, most of the molecules migrate to the lowest vibrational and rotational energy levels of the ground electronic state. Similar migration is also observed for the lowest triplet state. Therefore at 77 K, we can get the clean absorption an emission spectra and decay curves for the lowest triplet state. At 50 degrees C, due to the P- and/or E-type of delayed fluorescences, decay of T(1) state, in other words disappearance of the T(1) state is becoming faster than at low temperature (below room temperature).     

Morphology and fluorescence spectra of rubrene single crystals grown by physical vapor transport

Rubrene single crystals with pentagon, hexagon, lath-like, and needle-like shape were grown by physical vapor transport. The morphology of surface and transect of rubrene crystals was characterized by optical microscope, atomic force microscope and scanning electron microscope. Monolayers and layer-like structures were observed on the rubrene crystal surface and in the interior of single crystals, respectively. Size and quality of rubrene crystals could be controlled by tuning growth parameters including source temperature, deposition temperature, and growth time. Compared with the emission peak at 555 nm of rubrene solution with the concentration of 10⁻⁵ M, the emission peak of rubrene single crystals is at 649 nm with a shift of 94 nm. Hexagon etching pits with typical ladder-like structure were also observed on the (1 0 0) crystal plane and the density of dislocation lines is about 10³ cm⁻².     

Plasma treatment of ITO surfaces to improve luminescence characteristics of organic light-emitting devices with dopants

Indium-tin-oxide (ITO) surfaces were treated with O₂ and H₂ plasmas. The contact angle of water, X-ray photoelectron spectroscopy (XPS) spectra, and luminescence characteristics of organic light-emitting devices (OLEDs) fabricated on plasma-treated ITO surfaces using poly(N-vinylcarbazole) (PVK) films doped with 5,6,11,12-tetraphenylnaphthacene (rubrene) or Nile Red were investigated.Using O₂ plasma treatment, the contact angle was reduced from 35° to 13°. The luminance of OLEDs with rubrene was significantly improved. The luminous color of an OLED inserted poly (3,4-ethylenedioxythiophene)-polystyrene sulphonic acid (PEDOT-PSS) layer between Nile Red-doped PVK film and O₂-plasma-treated ITO surface turned white as the applied voltage increased.     

Molecular crystallization of rubrene thin films assisted by gold nanoparticles

We demonstrate that crystalline organic rubrene thin films can be obtained by a facile spin-coating method using gold (Au) nanoparticles (NPs). Dodecanethiol-functionalized Au NPs were dissolved with rubrene molecules in solvent and a thin film of Au/rubrene was prepared by a simple spin coating process. The results of confocal photoluminescence (PL) and absorption spectral mapping confirmed the local formation of orthorhombic crystalline structures of the Au/rubrene hybrid film, in contrast to the monoclinic structure of plain rubrene films. Further, the results of transmission electron microscopy (TEM) and X-ray diffraction analysis, as well as Raman spectroscopy measurements of the rubrene and Au/rubrene films suggested the formation of high crystalline Au/rubrene film. The molecular crystallization of the Au/rubrene hybrid film is attributed to the nucleation effect of the Au NPs.     

Fast identification of rubrene polymorphs by lattice phonon Raman microscopy

Confocal Raman microscopy in the lattice phonon region has been used to study the polymorphism of the organic semiconductor 5,6,11,12-tetraphenyl-tetracene (rubrene). Following literature guidelines, crystals of rubrene have been prepared using a number of solution growth and vapour deposition methods, obtaining samples of different morphologies which could be related to the various polymorphs of this compound. The technique has enabled us an easy and non invasive identification of the three known polymorphs and of their phase homogeneity with a lateral spatial resolution below 1 μm.     

Morphology and crystallographic properties of rubrene thin films grown on muscovite(0 0 1)

Thin films of the organic semiconductor rubrene were deposited on muscovite (0 0 1) substrates by hot wall epitaxy. The morphology of rubrene thin films in combination with their crystallographic properties was characterized by transmission electron microscopy. The initial growth proceeds in a partially wetting regime where amorphous droplets are formed. Through diffusive interactions the droplets merge together in partially crystalline open networks. At a more advanced growth stage, spherulites are formed and a variety of crystalline morphologies appears. Platelet- and needle-like morphologies can be assigned to the orthorhombic phase of rubrene with the [3 0 1] and [1 1 0] zone axes, respectively.     

ITO/Rubrene表面及界面的AFM和XPS研究

采用原子力显微镜(AFM)和X射线光电子能谱仪(XPS)研究了氧化铟锡(ITO)/红荧烯(Rubrene)的形貌和表面、界面的电子态。AFM结果显示,ITO上的Rubrene膜有良好的均匀性。XPS结果表明:C1s谱有3个峰,位于282.50,284.70,289.30 eV,对应于C—Si、CO和C—C键。用氩离子束溅射表面,芳香碳对应的峰值逐渐增大,其他两个峰值迅速消失。随着表面O污染的去除,O1s峰先快速减弱然后逐渐增强。界面附近的O原子与C原子结合构成OC、C—O—C和醛基。In3d和Sn3d峰则缓慢增强,在界面附近峰值变得稳定。C1s、In3d、Sn3d谱峰都向低束缚能发生化学位移,表明ITO与Rubrene在界面发生了相互作用,形成一个互扩散层。     

Emission properties of dopants rubrene and coumarin 6 in Alq3 films

We have investigated the emission properties of dopants 5,6,11,12-tetraphenylnapthacene (rubrene) and 3-(2′-benzothiazolyl)-7-diethylaminocoumarin (coumarin 6) as well as co-doping of these two dopants in tris (8-hydroxyquinolinato) aluminum (Alq₃) films in double-layer organic light emitting diodes (OLEDs). We varied the rubrene (Rb) doping concentration in Alq₃:Rb films up to 10 wt%. The maximum luminescence efficiency of ∼6.5 cd/A was observed for Rb doping concentration of ∼0.7 wt% in Alq₃:Rb film, which was nearly double efficiency compared to pure Alq₃ device. The co-doping of dopants of C-6 and Rb in the ratio of 1:1 and 1:2 in Alq₃ films reduced the bias voltage compared to pure Alq₃ and Alq₃:C-6 devices for the same current density. The maximum luminescence efficiency was improved to ∼7 cd/A in Alq₃:{C-6:Rb(1:2)} film OLED. The direct recombination of holes and electrons in the dopant molecules may be responsible for the improvement of the luminescence efficiency. We also observed the shifting of photoluminescence (PL) and electroluminescence (EL) peaks position from ∼515 to ∼562 nm by co-doping of Rb and C-6 in Alq₃.