Terahertz oscillations in semiconducting carbon nanotube resonant-tunneling diodes

The paper presents the simulation and possible physical implementation of a resonant tunneling diode based on a semiconducting single-walled carbon nanotube, which exceeds the performance of similar resonant tunneling devices based on semiconductor heterostructures. In this respect, the oscillation frequency and the output power are predicted to be greater by one order of magnitude, attaining 16 THz and 2.5 μW, respectively. The generated THz signal is directly radiated into free-space through the injection contacts of the resonant tunneling diode, which have the shape of a bowtie antenna.     

Self-assembly of trimetallic nitride template fullerenes on surfaces studied by STM

Trimetallic nitride template fullerenes have been deposited onto a variety of substrates in order to elucidate the substrate-fullerene interactions. We have investigated self-assembled island formation and molecular detail of Er₃N@C₈₀ and Sc₃N@C₈₀ on Ag/Si(1 1 1), Au(1 1 1)/mica, Si(1 1 1), and Si(0 0 1) using variable temperature scanning tunnelling microscopy (STM). At room temperature, the fullerenes self-assemble into monolayer-high hexagonal close-packed islands on Ag-passivated Si(1 1 1) whereas annealing at elevated temperatures (250-300 °C) is necessary for the self-assembly of close-packed islands on Au(1 1 1). Intra-molecular resolution of the fullerenes has been achieved at liquid nitrogen temperature on Ag/Si(1 1 1) and already at room temperature on Si(0 0 1), when the rotation of the fullerenes is frozen. Whereas the bonding between the fullerenes and Si surfaces is mainly covalent, it appears to be mainly van-der-Waals on the other surfaces.     

Influence of N cluster states on band dispersion in GaInNAs quantum wells

We use a modified band-anticrossing (BAC) model to investigate the band dispersion in a GaN_xAs_1-x/AlGaAs quantum well (QW) as a function of hydrostatic pressure. The band edge mass increases considerably more quickly with pressure than in the case of a GaAs/AlGaAs QW, and the subband separation also decreases significantly. We predict that the strong anticrossing interaction between the GaAs host conduction band and isolated N levels will inhibit tunnelling through the QW for a range of energy above the isolated N levels. The energy of N resonant states depends strongly on details of the local environment, giving a broader calculated distribution of N states in GaInNAs compared to GaNAs.     

Silicon-on-insulator microcavity light emitting diodes with two Si/SiO2 Bragg reflectors

Light emitting pn-diodes were fabricated on a 5.8 μm thick n-type Si device layer of a silicon-on-insulator (SOI) wafer using standard silicon technology and boron implantation. The thickness of the Si device layer was reduced to 1.3 μm, corresponding to a 4λ-cavity for λ=1150 nm light. Electroluminescence spectra of these low Q-factor microcavities are presented. Addition of Si/SiO₂ Bragg reflectors on the top and bottom of the device (3.5 and 5.5 pairs, respectively) is predicted to lead to spectral emission enhancement by ∼270.     

Temperature dependence of electrical conductivity and thermoelectric power of Bi-Sb tapes prepared by liquid quenching

Electrical conductivity and thermoelectric power of liquid-quenched Bi-Sb tapes with Sb concentration in the range 8 to 18 at.% are reported between 77K and room temperature. Analysis of the data shows that the total electrical conductivity of these tapes is determined by a temperature-independent component due to band conduction, and a strongly temperature-dependent part due to carrier transport across or through the defect states. These defect states which appear to originate from structural imperfections and disorders due to rapid cooling, are formed close to the mobility edge within a small energy range.     

准对称流的混沌和共振流线

采用计算Melnikov函数的方法 ,研究了描述qth(q=3或 6 )准对称流流体粒子运动的动力系统 .文中在分析未扰动系统轨道解析表示的基础上 ,深入考察了扰动系统的分岔情况 .结果表明 ,扰动系统在一定条件下能够分支出混沌和共振流线 .     

Thermally-assisted tunnelling of magnetization in （Mn0.96Cr0.04）12-ac

The thermally assisted resonant tunnelling in a single crystal (Mn_{0.96}Cr_{0.04})12-ac is studied in this paper. The obtained hysteresis loops at seven different temperatures between 1.8 and 3K show obvious dependence on temperature. The magnetization steps occur at specific field values of nH_R with H_R≈0.46T, which are approximately independent of the temperature. As the temperature decreases, the area enclosed in the hysteresis loops and the actual number n of the resonances increase, which provides clear evidence of thermally assisted resonant tunnelling in (Mn_{0.96}Cr_{0.04})12-ac.     

过模慢波结构频率反射特性及谐振腔的影响

 利用有限元方法求解:S-参数矩阵，研究了过模慢波结构对圆波导TM₀₁，TM₀₂模的反射特性，分析了在慢波结构末端加入谐振腔后，由于两端口的不对称性而造成的对反射特性影响。结果表明，在TM₀₁的π模频率附近，慢波结构和谐振腔组成的系统对无谐振腔一侧端口入射TM₀₁模的反射增大，而对有谐振腔一侧端口入射TM₀₁模的反射减小。根据计算结果，解释了普通多波切伦柯夫振荡器所用慢波结构周期数较多的原因，说明了在多波切伦柯夫振荡器中引入谐振腔后，不但可以减少所用慢波结构周期数，而且有利于提高微波输出效率。     

Impossibility of negative group velocities in a periodic layer structure with or without loss

The limiting group velocities available with a one-dimensional periodic medium composed of 1/4 wavelength sections are studied. For all realistic combination of medium parameters, it is found that there are superior and inferior limits to the group velocity. We use numerical analysis to investigate the effect of the refractive index mismatch, the phase velocities and the attenuation coefficient on the limits of group velocity. We show that negative group velocities are not possible in a linear passive periodic medium, and discuss why a recent report of negative tunnelling times in a passive periodic system may be explained in terms of the relatively large experimental uncertainty in determining the tunnelling times.