Natural Products in Preventing Tumor Drug Resistance and Related Signaling Pathways

Drug resistance is still an obstacle in cancer therapy, leading to the failure of tumor treatment. The emergence of tumor drug resistance has always been a main concern of oncologists. Therefore, overcoming tumor drug resistance and looking for new strategies for tumor treatment is a major focus in the field of tumor research. Natural products serve as effective substances against drug resistance because of their diverse chemical structures and pharmacological effects. We reviewed the signaling pathways involved in the development of tumor drug resistance, including Epidermal growth factor receptor (EGFR), Renin-angiotensin system (Ras), Phosphatidylinositol-3-kinase/protein kinase B (PI3K/Akt), Wnt, Notch, Transforming growth factor-beta (TGF-β), and their specific signaling pathway inhibitors derived from natural products. This can provide new ideas for the prevention of drug resistance in cancer therapy.     

LBO晶体超光滑表面抛光机理

胶体SiO2抛光LBO晶体获得无损伤的超光滑表面,结合前人对抛光机理的认识,探讨了超光滑表面抛光的材料去除机理,分析了化学机械抛光中的原子级材料去除机理.在此基础上,对胶体SiO2抛光LBO晶体表面材料去除机理和超光滑表面的形成进行了详细的描述,研究抛光液的pH值与材料去除率和表面粗糙度的关系.LBO晶体超光滑表面抛光的材料去除机理是抛光液与晶体表面的活泼原子层发生化学反应形成过渡的软质层,软质层在磨料和抛光盘的作用下很容易被无损伤的去除.酸性条件下,随抛光液pH值的减小抛光材料的去除率增大;抛光液pH值为4时,获得最好的表面粗糙度.     

前驱体法制备氮氧化硅纳米线及其光学性能研究

在Ni催化剂的存在下,通过SiCl4的水解氨解反应并在1300℃氨气气氛中进行热氮化处理制得了无定形氮氧化硅纳米线.产物经X射线衍射(XRD)、热重-差示扫描量热(TG-DSC)、扫描电镜(SEM)、透射电镜(TEM)、能量色散谱(EDS)和选区电子衍射(SAED)等表征手段进行分析,结果表明纳米线为无定形结构,直径为100～150nm.在波长为220nm的光激发下,产物的光致发光光谱(PL)在563nm和289nm处分别出现了一个强的绿光发光峰和一个弱的紫光发光峰.对纳米线的生长机理进行分析,表明纳米线的生长遵循气-液-固(VLS)机制控制模式.     

不同形貌氮化硅纳米结构的制备与表征

分别通过VLS和VS生长机制得到了Si3N4纳米线和纳米带.产物经X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)等表征手段进行了分析.FTIR图谱表明它们在800～1100cm-1的波数范围内有一个宽的吸收带,这是Si-N键伸缩振动模式的典型吸收带.它们的室温光致发光图谱显示,在420nm左右都有一很强的发射带,表明其将在纳米光电器件中有潜在应用.另外,Si3N4纳米线发光峰与纳米带的发光相比有少许蓝移(蓝移约4nm),这可能和晶须尺寸的少许差别有关.至于纳米带的发光强度大于纳米线的原因,可能是纳米带的比表面积相对较大,有利于悬键的形成,从而导致材料结构内缺陷的浓度较大.     

CTAB与SDBS对碳酸锶粒子生长形态调控及机理研究

以表面活性剂CTAB和SDBS为化学添加剂,采用化学共沉淀法对碳酸锶晶体的生长形态进行调控,成功地制备出了实心的树枝状和花瓣为空心的花状碳酸锶粉体,并用X射线衍射(XRD)、扫描电子显微镜(SEM)和傅里叶变换红外光谱(FT-IR)等分析手段对样品进行了表征;最后重点对化学添加剂可能产生的影响机理进行了初步的探讨.结果表明,CTAB和SDBS在晶体生长的过程中能起到显著的影响作用,两者对粒子分散性能的作用效果相反,而且后者对晶体(013)和(213)晶面表面能降低的贡献明显大于前者.     

Improved Stretchable and Sensitive Fe Nanowire-Based Strain Sensor by Optimizing Areal Density of Nanowire Network

Flexible strain sensors, when considering high sensitivity and a large strain range, have become a key requirement for current robotic applications. However, it is still a thorny issue to take both factors into consideration at the same time. Here, we report a sandwich-structured strain sensor based on Fe nanowires (Fe NWs) that has a high GF (37–53) while taking into account a large strain range (15–57.5%), low hysteresis (2.45%), stability, and low cost with an areal density of Fe NWs of 4.4 mg/cm². Additionally, the relationship between the contact point of the conductive network, the output resistance, and the areal density of the sensing unit is analyzed. Microscopically, the contact points of the conductive network directly affect the sensor output resistance distribution, thereby affecting the gauge factor (GF) of the sensor. Macroscopically, the areal density and the output resistivity of the strain sensor have the opposite percolation theory, which affects its linearity performance. At the same time, there is a positive correlation between the areal density and the contact point: when the stretching amount is constant, it theoretically shows that the areal density affects the GF. When the areal density reaches this percolation threshold range, the sensing performance is the best. This will lay the foundation for rapid applications in wearable robots.     

金红石TiO_2中本征缺陷扩散性质的第一性原理计算

基于密度泛函理论的爬坡弹性带方法,对金红石相二氧化钛晶体中钛间隙、钛空位、氧间隙、氧空位4种本征缺陷的扩散特征进行了研究.对比4种本征缺陷在晶格内部沿不同扩散路径的过渡态势垒后发现,缺陷扩散过程呈现出明显的各向异性.其中,钛间隙和氧间隙沿[001]方向具有最小的扩散势垒路径,激活能分别为0.505 eV和0.859 eV;氧空位和钛空位的势垒最小的扩散路径分别沿[110]方向和[111]方向,激活能分别为0.735 eV和2.375 eV.     

Erratum to "Quantum compact model for thin-body double-gate Schottky barrier MOSFETs"

<正>The statement for the third paragraph of the right column of page 3079 (Chinese Physics B, 2008, Vol. 17,No. 8, pp. 3077-3082 )[1]is inappropriate. This paragraph should be restated as follows.     

含周期性空腔结构吸声机理的研究

为了研究水下含周期性空腔结构的吸声机理,建立并验证了含轴对称空腔周期性结构吸声特性计算的简化有限元仿真方法,用简化的有限元模型结合遗传算法对水下环境含周期性圆柱空腔结构的吸声性能进行了优化设计.从能量耗散、变形和模态的角度分析了含周期性空腔结构的吸声机理.空腔结构谐振包括表层的弯曲振动和空腔附近的径向变形,且径向运动也...     

基序B参与调控模板依赖的聚合酶抑制作用

RNA依赖的RNA聚合酶是参与新冠病毒进行RNA复制与转录的主要分子机器. 之前的实验研究表明瑞德西韦在模板链上时存在两次抑制作用,即不仅可以抑制与之互补的尿嘧啶核苷三磷酸的加成,还可以抑制下一位核苷三磷酸的加成. 然而,第二次抑制作用的分子机制尚未阐明. 本文运用了分子动力学模拟,发现瑞德西韦在模板链上的第二次抑制不是直接作用于核苷酸在活性位点的加成,而是源于瑞德西韦从+1位点到-1位点的迁移过程受到阻碍,这将导致活性位点无法空出,核苷三磷酸无法进入活性位点从而产物链的延长被终止. 首先,发现了基序B中G683会和瑞德西韦的1''-氰基相互作用,导致移位后态的RNA双链配对稳定性低于移位前态,从而使得瑞德西韦的移位在热力学上不易发生. 其次,由于瑞德西韦的1''-氰基在迁移过程中会与基序B的S682产生位阻,进一步从动力学上阻碍了瑞德西韦动态移位的发生. 本研究不仅揭示了基序B上两个相邻且高度保守的氨基酸可以调控瑞德西韦沿模板链的移位过程,同时,本文的发现也进一步完善了对瑞德西韦抑制新冠病毒RNA复制和转录的分子机制的理解.