Electrical and optical properties of Si-doped indium tin oxides as transparent electrode and anti-reflection coating for solar cells

We have studied the electrical and optical properties of Si-doped indium tin oxides (ITSOs) as transparent electrodes and anti-reflection coatings for Si-based solar cells. The ITSO thin films were obtained by co-sputtering of ITO and SiO₂ targets under target power control. The resistivity of the ITSO thin films deposited at 0.625 in terms of power ratio (ITO/SiO₂) were 391 Ωcm. In this condition, the ITSO thin films showed very high resistivity compared to sputted pure ITO thin films (1.08 × 10⁻³ Ωcm). However, refractive index of ITSO thin films deposited at the same condition at 500 nm is somewhat lowered to 1.97 compared to ITO thin films (2.06). The fabricated graded refractive index AR coatings using ITO, ITSO, and SiO₂ thin films kept over 80% of transmittance regardless of their thickness varing from 97 nm to 1196 nm because of their low extinction coefficient. As the AR coating with graded refractive indices using ITO, ITSO, and SiO₂ layers was applied to general silicon-based solar cell, the current level increased nearly twice more than that of bare silicon solar cell without AR coating.     

Computing the distribution of the Robinson-Foulds distance

With the exponential growth of genome databases, the importance of phylogenetics has increased dramatically over the past years. Studying phylogenetic trees enables us not only to understand how genes, genomes, and species evolve, but also helps us predict how they might change in future. One of the crucial aspects of phylogenetics is the comparison of two or more phylogenetic trees. There are different metrics for computing the dissimilarity between a pair of trees. The Robinson-Foulds (RF) distance is one of the widely used metrics on the space of labeled trees. The distribution of the RF distance from a given tree has been studied before, but the fastest known algorithm for computing this distribution is a slow, albeit polynomial-time, O(l⁵) algorithm. In this paper, we modify the dynamic programming algorithm for computing the distribution of this distance for a given tree by leveraging the number-theoretic transform (NTT), and improve the running time from O(l⁵) to O(l³ log l), where l is the number of tips of the tree. In addition to its practical usefulness, our method represents a theoretical novelty, as it is, to our knowledge, one of the rare applications of the number-theoretic transform for solving a computational biology problem.     

平衡炮实验弹丸膛内过载计算模型及应用

 针对平衡炮的具体结构特点,为了精确计算弹丸膛内过载变化过程,利用经典内弹道法对某口径的平衡炮进行了仿真计算,得出了内弹道诸元随时间的变化曲线,再根据膛压与过载的关系,推导出了过载随时间变化的曲线图,理论计算与实验结果相吻合,该计算方法可为此类火炮的内弹道参数评估和弹丸设计提供依据。     

感应耦合等离子体中和枪的电子引出特性研究

给出了一种感应耦合等离子体源的设计,用于等离子体中和枪装置.通过实验方法研究等离子体源的电子引出特性,并结合理论分析了等离子体密度随射频功率的变化关系.研究结果表明等离子体源的电子引出特性与放电腔内气压有关联性,E?H模式转换中电子密度的变化与负载的电感值相关.研究成果对等离子体中和枪的发展有重要的参考价值.     

氢对GaAs薄膜的钝化作用

报导了射频磁控溅射与沉积气氛掺氢相结合制备单层(13~20 nm厚)高质量GaAs多晶态纳米薄膜的方法,研究了氢钝化对薄膜微观结构及光学性质的影响.对GaAs薄膜进行了X射线衍射、原子力显微镜、吸收光谱、光致荧光谱的研究分析.结果表明,衬底温度500℃的掺氢薄膜和520℃的薄膜呈面心立方闪锌矿结构,薄膜的晶团尺寸较大,微观表面较为粗糙,其吸收光谱出现了吸收边蓝移和明显的激子峰,带隙光致荧光峰强明显增加,说明氢在衬底温度500℃~520℃下对薄膜有重要的钝化作用.     

ZnS衬底上GeC/GaP增透保护膜系的制备及红外光学性质

把GeC/GaP双层膜用作ZnS衬底的长波红外(8~11.5μm波段)增透保护膜系。采用射频磁控溅射法,以高纯Ar为工作气体、单晶GaP圆片为靶制备了GaP薄膜;用射频磁控反应溅射法在高纯Ar和CH4的混合气体中,以单晶Ge圆片为靶制备了GeC薄膜。分别用柯西(Cauchy)公式和乌尔巴赫(Urbach)公式表示折射率和吸收系数,对薄膜的红外透射率曲线进行最小二乘法拟合,得到了它们的厚度及折射率、吸收系数等光学常数。GaP膜的折射率与块体材料的相近,在波长10μm处约为2.9;GeC膜的折射率较小,在波长10μm处约为1.78。用所得到的薄膜折射率,通过计算机膜系自动设计软件在ZnS衬底上设计并制备出了GeC/GaP双层增透保护膜系,当GaP膜厚较大时,由于吸收增大膜系增透效果较差;当GaP膜厚较小时,膜系有较好的增透效果。     

柴胡舒肝丸的毛细管电泳指纹图谱及其黄芩苷含量的测定

建立了柴胡舒肝丸(Chaihu Shugan Pill, CHSGP)的毛细管区带电泳指纹图谱(capillary electrophoresis fingerprint, CEFP),并采用内标法测定了黄芩苷的含量。以50 mmol/L硼砂-150 mmol/L磷酸二氢钠-50 mmol/L磷酸氢二钠(1:1:1, v/v/v)(含5 mmol/L庚烷磺酸钠)为背景电解质(BGE)溶液,采用未涂层石英毛细管(总长度75 cm,有效分离长度63 cm,内径75 μm),以色谱指纹图谱分离量指数(RF)为目标函数优化实验条件,在紫外检测波长265 nm、运行电压11 kV条件下,以黄芩苷峰为参照物峰,确定了22个共有指纹峰,建立了CHSGP的CEFP,通过对20批样品聚类分析确定用其中13批生成对照CEFP(RCEFP),以此RCEFP为标准用系统指纹定量法鉴别20批柴胡舒肝丸质量。结果其中的4批化学成分数量和分布比例不合格,4批含量明显偏低,其他12批完全合格。采用内标法测定黄芩苷的含量,在5～200 mg/L范围内线性良好(r=0.9999),平均回收率(n=9)为98.2%。该法具有较好的精密度和重现性,为柴胡舒肝丸的质量控制提供了一种新的参考。     

钨合金柱形弹超高速撞击水泥砂浆靶的侵彻深度研究

为探索钨合金柱形弹超高速撞击水泥砂浆靶的侵彻深度随撞击速度变化规律,利用二级轻气炮开展了?3.45 mm×10.5 mm的克级93 W钨合金柱形弹以1.82~3.66 km/s的速度撞击水泥砂浆靶的实验,利用CT图像诊断技术获得了侵彻深度和残余弹长随撞击速度的变化规律,对超高速撞击过程进行了数值模拟,结合数值模拟结果进一步分析了超高速撞击物理过程。结果表明:(1)超高速撞击条件下成坑是弹坑+弹洞型;(2)侵深-速度曲线呈现先增大后减小的现象,在弹速2.6 km/s附近存在侵彻深度极大值,约为8.5倍弹长,相对于中低速侵彻的深度并没有显著优势。(3)通过基于数值模拟得到的弹靶界面压力时程曲线将侵彻过程分为4个阶段,其中准定常侵彻阶段和第三侵彻阶段是决定总侵深的主要阶段。(4)随撞击速度增加,弹体侵蚀逐渐剧烈,此时准定常侵彻阶段的侵深变化不大,而第三侵彻阶段中的刚体侵彻部分大幅降低,导致总侵深大幅降低,使总侵深曲线呈现先增大后减小的现象。     

作为BEPCII预注入器的光阴极注入器

 为了提高并且采用双束加速技术以进一步提高BEPCII正电子从直线加速器注入到储存环的速率,BEPCII(Beijing Electron Positron Collider Upgrade Project) 正在建造带有两个次谐波聚束腔的新预注入器。提出了使用光阴极注入器作为BEPCII预注入器的新方案,其性能优于次谐波聚束系统：发射度和能散至多为次谐波聚束系统的1/4,100%的传输效率,没有卫星束团的干扰,等。此外,还分别对光阴极注入器在高电荷量和低电荷量两种情况下的束流动力学进行了模拟计算和优化研究,并将其性能与正在建造的次谐波聚束系统和旧聚束系统的性能进行了比较和讨论。由此光阴极注入器产生的电子束还可以在将来用作激光-等离子体或激光-非传导性加速结构的尾场加速研究。     

光阴极RF腔注入器束流发射度研究

 分析了光阴极RF腔注入器中的RF场效应和空间电荷效应，给出了电子在加速腔中束流发射度的解析表达式，它说明在加速过程中束流发射度是振荡变化的。利用SUPERFISH和GPT程序模拟计算了光阴极1+1/2腔注入器输出束流发射度与加速场强、注入相位、束团大小和形状、束团电荷的关系。适当选择这些条件，可以获得横向发射度小于2πmm·mrad 的输出束流。