High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H_2O as an oxidizer

In this study,the high performance of InGaN/GaN multiple quantum well light-emitting diodes(LEDs) with Aldoped ZnO(AZO) transparent conductive layers(TCLs) has been demonstrated.The AZO-TCLs were fabricated on the n~+-InGaN contact layer by metal organic chemical vapor deposition(MOCVD) using H_2O as an oxidizer at temperatures as low as 400 ℃ without any post-deposition annealing.It shows a high transparency(98%),low resistivity(510 ~4 Ω·cm),and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer.A forward voltage of 2.82 V @ 20 mA was obtained.Most importantly,the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL(LED-Ⅲ),and by28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O_2 as an oxidizer(LED-Ⅱ),respectively.The results indicate that the AZO-TCL grown by MOCVD using H_2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application.     

直接出射白光的新型发光二极管

介绍了实现出射白光发光二极管的几种方法,包括波长转化产生白光,多有源区级联合成白光以及单个有源区直接出射白光.并从芯片结构、材料选取、白光形成机理以及器件性能等四个方面对这几种方法进行了分析比较.最后指出了实现直接出射白光的发光二极管存在的问题及今后的研究重点.     

Slow electron acoustic double layer (SEADL) structures in bi-ion plasma with trapped electrons

The properties of ion acoustic double layer (IADL) structures in bi-ion plasma with electron trapping are investigated by using the quasi-potential analysis. The κ-distributed trapped electrons number density expression is truncated to some finite order of the electrostatic potential. By utilizing the reductive perturbation method, a modified Schamel equation which describes the evolution of the slow electron acoustic double layer (SEADL) with the modified speed due to the presence of bi-ion species is investigated. The Sagdeev-like potential has been derived which accounts for the effect of the electron trapping and superthermality in a bi-ion plasma. It is found that the superthermality index, the trapping efficiency of electrons, and ion to electron temperature ratio are the inhibiting parameters for the amplitude of the slow electron acoustic double layers (SEADLs). However, the enhanced population of the cold ions is found to play a supportive role for the low frequency DLs in bi-ion plasmas. The illustrations have been presented with the help of the bi-ion plasma parameters in the Earth's ionosphere F-region.     

中波红外3 μm～5 μm宽带通滤光片的研制

 中波红外宽带通滤光膜通常膜系层数多,膜层总厚度非常大（厚度达到10 μm左右）,膜层的镀制工艺难度较大。通过分析红外带通滤光片几种设计方法的特点,并结合实际镀制工艺技术,采用了长波通与短波通及非规整薄膜设计技术相结合的方法,设计了以锗材料为基底的中波3 μm～５ μm宽带通滤光膜。该设计大幅度降低了膜层的总厚度（约为8.65 μm）,缩短了膜层的镀制周期,提高了膜层的牢固度;在膜层的镀制工艺过程中,通过改变薄膜材料的蒸发速率、修正蒸发硫化锌材料时电子枪的扫描方式、调整蒸发材料在坩埚中的装载方法,使膜层获得了优异的光谱性能,其通带平均透过率大于96%,截止区域的平均透过率小于1%。     

The influence of temperature gradients on the kinetic boundary layer problem for a condensing droplet

We extend an earlier method for solving kinetic boundary layer problems to the case of particles moving in aspatially inhomogeneous background. The method is developed for a gas mixture containing a supersaturated vapor and a light carrier gas from which a small droplet condenses. The release of heat of condensation causes a temperature difference between droplet and gas in the quasistationary state; the kinetic equation describing the vapor is the stationary Klein-Kramers equation for Brownian particles diffusing in a temperature gradient. By means of an expansion in Burnett functions, this equation is transformed into a set of coupled algebrodifferential equations. By numerical integration we construct fundamental solutions of this equation that are subsequently combined linearly to fulfill appropriate mesoscopic boundary conditions for particles leaving the droplet surface. In view of the intrinsic numerical instability of the system of equations, a novel procedure is developed to remove the admixture of fast growing solutions to the solutions of interest. The procedure is tested for a few model problems and then applied to a slightly simplified condensation problem with parameters corresponding to the condensation of mercury in a background of neon. The effects of thermal gradients and thermodiffusion on the growth rate of the droplet are small (of the order of 1%), but well outside of the margin of error of the method.     

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.     

Strong perpendicular magnetic anisotropy in Co2FeAl0.5Si0.5 film sandwiched by MgO layers

Co2FeAl0.5Si0.5 (CFAS)-based multilayers sandwiched by MgO layers have been deposited and annealed at different temperatures. Perpendicular magnetic anisotropy (PMA) with the magnetic anisotropy energy density Ku ≈2.5×106 erg/cm3 (1 erg = 10-7 J) and the coercivity Hc = 363 Oe (1 Oe = 79.9775 A · m-1) has been achieved in the Si/SiO2/MgO (1.5 nm)/CFAS (2.5 nm)/MgO (0.8 nm)/Pt (5 nm) film annealed at 300 ℃. The strong PMA is mainly due to the top MgO layer. The structure can be used as top magnetic electrodes in half-metallic perpendicular magnetic tunnel junctions.     

Structure of Artificial Grain Boundaries in Sapphire Bicrystals with Intermediate Layers

The structure of the artificial grain boundaries in Al₂O₃ bicrystals withY₃Al₅O₁₂ and Y-stabilizedZrO₂ (Y-ZrO₂) intermediate layers was studiedwith high resolution electron microscopy, electron diffraction and energydispersive X-ray analysis. TheY₃Al₅O₁₂ intermediate layer wasfound to be polycrystalline with three different orientation relationshipsbetween the ₂O₃ and theY₃Al₅O₁₂. The structure of theY₃Al₅O₁₂/₂O₃ interfaces is described.Also₂O₃ bicrystals with an Y-ZrO₂/₂O₃/Y-ZrO₂/₂O₃/Y-ZrO₂intermediate layer, prepared at two different temperatures, werestudied.Recry stallization of the intermediate layers occurred during thesolid phase intergrowth of the ₂O₃ bicrystalsparts and only an Y-ZrO₂ layer was found as intermediatelayer. The misorientation between the consecutive Y-ZrO₂grains was less than 1.5°. Misfit dislocations and atomic height stepsdecorate the Y-ZrO₂/₂O₃interface.     

Eigenmodes of index-modulated layers with lateral PMLs

Maxwell equations are solved in a layer comprising a finite number of homogeneous isotropic dielectric regions ended by anisotropic perfectly matched layers (PMLs). The boundary-value problem is solved and the dispersion relation inside the PML is derived. The general expression of the eigenvalues equation for an arbitrary number of regions in each layer is obtained, and both polarization modes are considered. The modal functions of a single layer ended by PMLs are found, and their orthogonality relation is derived. The present method is useful to simulate scattering problems from dielectric objects as well as propagation in planar slab waveguides. Its potential to deal with more complex problems such as the scattering from an object with arbitrary cross section in open space using the multilayer modal method is briefly discussed.