首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   6442篇
  免费   277篇
  国内免费   482篇
化学   1394篇
晶体学   48篇
力学   34篇
综合类   4篇
数学   529篇
物理学   5192篇
  2024年   6篇
  2023年   63篇
  2022年   63篇
  2021年   71篇
  2020年   148篇
  2019年   174篇
  2018年   189篇
  2017年   159篇
  2016年   276篇
  2015年   252篇
  2014年   363篇
  2013年   390篇
  2012年   341篇
  2011年   568篇
  2010年   387篇
  2009年   483篇
  2008年   477篇
  2007年   390篇
  2006年   415篇
  2005年   280篇
  2004年   280篇
  2003年   218篇
  2002年   181篇
  2001年   164篇
  2000年   165篇
  1999年   116篇
  1998年   159篇
  1997年   56篇
  1996年   55篇
  1995年   53篇
  1994年   37篇
  1993年   25篇
  1992年   31篇
  1991年   33篇
  1990年   21篇
  1989年   16篇
  1988年   23篇
  1987年   8篇
  1986年   19篇
  1985年   11篇
  1984年   3篇
  1983年   5篇
  1982年   2篇
  1981年   2篇
  1980年   5篇
  1979年   2篇
  1978年   2篇
  1977年   3篇
  1974年   2篇
  1973年   4篇
排序方式: 共有7201条查询结果,搜索用时 140 毫秒
141.
Nous quantifions certaines inclusions d'algèbres de Lie semi-simpleshg. Nous calculons les homologies associées aux quantifications, surC((h)), d'une part des algèbres de fonctions formelles surG/H, pourHG une inclusion de groupes de Lie semi-simples associée, et d'autre part des fonctions algébriques sur SL(2,C)/T.We quantize certain inclusions of semisimple Lie algebrashg. We compute the cyclic and Hochschild homologies for theC((h))-quantizations of
(1)  the ring of formal functions onG/H,G andH semisimple Lie groups associated to these inclusions, and
(2)  the ring of algebraic functionsSL(2,C)/T (T being the nonquantized torus of SL(2, C)).
  相似文献   
142.
Monolayer and multilayer Ge nanocluster structures were prepared on Si(1 0 0) using molecular beam epitaxy. The cluster size was 10 nm and cluster density was 1010 cm−2. A stable field electron emission was obtained from these structures, showing current peaks in the current–voltage characteristics, which may be attributed to the resonant electron tunneling via the energy levels of the nanocluster potential well. For cluster multilayers, the current–voltage curves also showed current peaks with a complex shape. The cluster multilayer structures had a considerable temperature sensitivity, as well as photosensitivity, in the wavelength range from 0.4 to 10 μm.  相似文献   
143.
本文对N-(对-硝基)苄基-1,7,7-三甲基-双环[2.2.1]庚烷-2-亚胺(3)和N-[11—[12-羟基-12-二苯基]甲基]苄基-1,7,7-三甲基-双环[2.2.1]庚烷-2-亚胺(4)进行了X-射线晶体结构分析。采用MOPAC程序的MNDO方法对(+)-樟脑缩苄胺即N-苄基-1,7,7-三甲基-双环[2.2.1]庚烷-2-亚胺(2a)的内部转动势能进行了理论计算。结果表明,(+)-樟脑缩苄胺(2a)以反式(trans)构象形式存在,它在不对称反应中的立体选择性主要受樟脑环上方C10甲基的控制。  相似文献   
144.
Parameters are developed for a practical application of the empirical van der Waals (vdW) correction infrastructure available in the CPMD density functional theory (DFT) code. The binding energy, geometry, and potential energy surface (PES) are examined for methane, ethane, ethylene, formaldehyde, ammonia, three benzene dimer geometries, and three benzene–water geometries. The vdW corrected results compare favorably with MP2 and CCSD(T) calculations near the complete basis set limits, and with experimental results where they are available.  相似文献   
145.
At this paper a field effect transistor based on graphene nanoribbon (GNR) is modeled. Like in most GNR-FETs the GNR is chosen to be semiconductor with a gap, through which the current passes at on state of the device. The regions at the two ends of GNR are highly n-type doped and play the role of metallic reservoirs so called source and drain contacts. Two dielectric layers are placed on top and bottom of the GNR and a metallic gate is located on its top above the channel region. At this paper it is assumed that the gate length is less than the channel length so that the two ends of the channel region are un-gated. As a result of this geometry, the two un-gated regions of channel act as quantum barriers between channel and the contacts. By applying gate voltage, discrete energy levels are generated in channel and resonant tunneling transport occurs via these levels. By solving the NEGF and 3D Poisson equations self consistently, we have obtained electron density, potential profile and current. The current variations with the gate voltage give rise to negative transconductance.  相似文献   
146.
Cisplatin, carboplatin, and oxaliplatin represent three generations of platinum based drugs applied successfully for cancer treatment. As a consequence of the employment of platinum based cytostatics in the cancer treatment, it became necessary to study the mechanism of their action. Current accepted opinion is the formation of Pt‐DNA adducts, but the mechanism of their formation is still unclear. Nanomaterials, as a progressively developing branch, can offer a tool for studying the interactions of these drugs with DNA. In this study, fluorescent CdTe quantum dots (QDs, λem = 525 nm) were employed to investigate the interactions of platinum cytostatics (cisplatin, carboplatin, and oxaliplatin) with DNA fragment (500 bp, c = 25 μg/mL). Primarily, the fluorescent behavior of QDs in the presence of platinum cytostatics was monitored and major differences in the interaction of QDs with tested drugs were observed. It was found that the presence of carboplatin (c = 0.25 mg/mL) had no significant influence on QDs fluorescence; however cisplatin and oxaliplatin quenched the fluorescence significantly (average decrease of 20%) at the same concentration. Subsequently, the amount of platinum incorporated in DNA was determined by QDs fluorescence quenching. Best results were reached using oxaliplatin (9.4% quenching). Linear trend (R2 = 0.9811) was observed for DNA platinated by three different concentrations of oxaliplatin (0.250, 0.125, and 0.063 mg/mL). Correlation with differential pulse voltammetric measurements provided linear trend (R2 = 0.9511). As a conclusion, especially in the case of oxaliplatin‐DNA adducts, the quenching was the most significant compared to cisplatin and nonquenching carboplatin.  相似文献   
147.
A simple, quick and novel method for the determination of diffusion properties through polymer films, based on Quantum Resistive Sensors made of Conductive Polymer nanoComposites is presented. The integral time lag method is employed for the calculation of diffusion coefficient, and the results are compared simultaneously with that of Fourier transform infrared spectroscopy and sorption method. Two model polymers, a semi‐crystalline poly(lactic acid) and an amorphous poly(isobutylene‐co‐isoprene), are used to validate the study. A good correlation is established between the diffusion coefficient values derived from all techniques demonstrating the interest of such reliable, simple and cheap nanosensors for the quick determination (several minutes) of diffusion properties in polymer films. Our first results suggest that this technique is meaningful for the determination of barrier properties in nanocomposite membranes filled with platelets of graphene or clay. Copyright © 2013 John Wiley & Sons, Ltd.  相似文献   
148.
An attempt is made to study the two dimensional (2D) effective electron mass (EEM) in quantum wells (Qws), inversion layers (ILs) and NIPI superlattices of Kane type semiconductors in the presence of strong external photoexcitation on the basis of a newly formulated electron dispersion laws within the framework of k.p. formalism. It has been found, taking InAs and InSb as examples, that the EEM in Qws, ILs and superlattices increases with increasing concentration, light intensity and wavelength of the incident light waves, respectively and the numerical magnitudes in each case is band structure dependent. The EEM in ILs is quantum number dependent exhibiting quantum jumps for specified values of the surface electric field and in NIPI superlattices; the same is the function of Fermi energy and the subband index characterizing such 2D structures. The appearance of the humps of the respective curves is due to the redistribution of the electrons among the quantized energy levels when the quantum numbers corresponding to the highest occupied level changes from one fixed value to the others. Although the EEM varies in various manners with all the variables as evident from all the curves, the rates of variations totally depend on the specific dispersion relation of the particular 2D structure. Under certain limiting conditions, all the results as derived in this paper get transformed into well known formulas of the EEM and the electron statistics in the absence of external photo-excitation and thus confirming the compatibility test. The results of this paper find three applications in the field of microstructures.  相似文献   
149.
The status of quantum cosmologies as testable models of the early universe is assessed in the context of inflation. While traditional Wheeler–DeWitt quantization is unable to produce sizable effects in the cosmic microwave background, the more recent loop quantum cosmology can generate potentially detectable departures from the standard cosmic spectrum. Thus, present observations constrain the parameter space of the model, which could be made falsifiable by near‐future experiments.  相似文献   
150.
A. Bande 《Molecular physics》2019,117(15-16):2014-2028
ABSTRACT

Recently, highly accurate multi-configuration time-dependent Hartree electron dynamics calculations demonstrated the efficient long-range energy transfer inter-Coulombic decay (ICD) process to happen in charged semiconductor quantum dot (QD) pairs. ICD is initiated by intraband photoexcitation of one of the QDs and leads to electron emission from the other within a duration of about 150 ps. On the same time scale electronically excited states are reported to relax due to the coupling of electrons to acoustic phonons. Likewise, phonons promote ionisation. Here, the QDs' acoustic breathing mode is implemented in a frozen-phonon approach. A detailed comparison of the phonon effects on electron relaxation and emission as well as on the full ICD process is presented, which supports the previous empirical finding of ICD being the dominant decay channel in paired QDs. In addition the relative importance of phonon–phonon, phonon–electron and electron–electron interaction is analysed.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号