Comparison of the band alignment of strained and strain-compensated GaInNAs QWs on GaAs and InP substrates

We present a comparison of the band alignment of the Ga_1−xIn_xN_yAs_1−y active layers on GaAs and InP substrates in the case of conventionally strained and strain-compensated quantum wells. Our calculated results present that the band alignment of the tensile-strained Ga_1−xIn_xN_yAs_1−y quantum wells on InP substrates is better than than that of the compressively strained Ga_1−xIn_xN_yAs_1−y quantum wells on GaAs substrates and both substrates provide deeper conduction wells. Therefore, tensile-strained Ga_1−xIn_xN_yAs_1−y quantum wells with In concentrations of x0.53 on InP substrates can be used safely from the band alignment point of view when TM polarisation is required. Our calculated results also confirm that strain compensation can be used to balance the strain in the well material and it improves especially the band alignment of dilute nitride Ga_1−xIn_xN_yAs_1−y active layers on GaAs substrates. Our calculations enlighten the intrinsic superiority of N-based lasers and offer the conventionally strained and strain-compensated Ga_1−xIn_xN_yAs_1−y laser system on GaAs and InP substrates as ideal candidates for high temperature operation.     

Observations of nascent superfluidity in a bilayer two-dimensional electron system at

Single-layer longitudinal and Hall resistances have been measured in a bilayer two-dimensional electron system at ν_T=1 with equal but oppositely directed currents flowing in the two layers. At small effective layer separation and low temperature, the bilayer system enters an interlayer coherent state expected to exhibit superfluid properties. We detect this nascent superfluidity through the vanishing of both resistances as the temperature is reduced. This corresponds to the counterflow conductivity rising rapidly as the temperature falls, reaching by . This supports the prediction that the ground state of this system is an excitonic superfluid.     

Magneto optics of single photons emitted from single InAs/GaAs self-assembled quantum dots in a planar microcavity

We fully characterize the fine spectral structure of neutral and negatively charged single microcavity quantum dot excitons, using polarization-sensitive magneto-photoluminescence spectroscopy. We show that the microcavity allows the simultaneous detection of both the bright and dark excitons using Faraday configuration. Thus, we were able to fully determine the fine structure and the g-factors of the neutral and negatively charged single exciton states within the same single quantum dot. Our measurements are in excellent agreement with novel, many carrier model calculations, which take into account Coulomb and exchange interactions among all the confined e–h pair states.     

TE- and TM-polarization-resolved spectroscopy on quantum wells under normal incidence

We present TE- and TM-polarization-resolved photocurrent measurements on quantum well pin diodes under normal incidence. Usually, optical experiments performed in such a geometry yield information only about transitions involving in-plane (p_x and p_y) components of the hole wave functions because of the in-plane (TE) polarization of the light. Information on transitions sensitive to the p_z components can be obtained by focussing a radially polarized laser beam through a microscope objective with high numerical aperture (NA=0.9). With our setup, the electrical field vector at the focal tail has a significant component along the optical axis (TM-polarization!) which enables excitation of transitions sensitive to p_z components also. Additionally, the existence of a degenerate (azimuthally polarized) optical mode enables switching these p_z components on and off easily.Experimental evidence of these features has been achieved by exploiting the selection rules for e–hh and e–lh transitions in a quantum well structure. We present a comparison of our recorded spectra with theoretical predictions obtained from simple geometric optics assumptions. For our quantum wells the polarization effects are small because our measurement averages the intensity distribution of the whole focal plane. We plan to extend our measurements to polarization resolved single quantum dot spectroscopy. By restricting the detection region to the spatial extent of a single dot, one can exploit the almost pure TM-polarization on the optical axis for obtaining high contrast between heavy- and light-hole exciton absorption.     

Photomagnetic effect in bilayer two-dimensional electron–hole systems

In tilted magnetic fields a bilayer electron–hole system is found to generate a photocurrent under terahertz radiation as the system is tuned to electron cyclotron resonance conditions. The photoinduced current amplitude oscillates with the magnetic field in correlation with Shubnikov–de Haas oscillations for electrons. The phenomenon is accounted for by a photomagnetic effect in electron–hole systems in the quantum Hall regime and has potentialities for terahertz detection and spectroscopy.     

Control of structural and excitonic properties of self-organized InAs/GaAs quantum dots

A systematic dependence of excitonic properties on the size of self-organized InAs/GaAs quantum dots is presented. The bright exciton fine-structure splitting changes from negative values to more than 0.5 meV, and the biexciton binding energy varies from antibinding to binding, as the height of truncated pyramidal dots increases from 2 to above 9 InAs monolayers. A novel mode of metalorganic vapor phase epitaxy was developed for growing such quantum dots with precise shape control. The dots consist of pure InAs and feature heights varying in steps of complete InAs monolayers. Such dot ensembles evolve from a strained, rough two-dimensional layer with a thickness close to the critical value for the onset of the 2D–3D transition. Dots with a common height represent subensembles with small inhomogeneous broadening. Tuning of subensemble emission energy is achieved by varying the mean lateral extension of the respective QDs. Detailed knowledge of the structural properties of individual dots enable realistic k·p calculations to analyze the origin of the observed excitonic properties. The binding energies of charged and neutral excitons increase due to correlation by the gradually increasing number of bound states for increasing dot size. The monotonously increasing magnitude of the fine-structure splitting with dot size is shown to be caused by piezoelectricity. The identification of key parameters allows to tailor exciton properties, providing a major step towards the development of novel applications.     

四端双量子点系统中的自旋和电荷能斯特效应

基于非平衡态格林函数方法,理论研究了与四个电极耦合的双量子点系统中的自旋和电荷能斯特效应,考虑了不同电极的磁动量结构和量子点内以及量子点间电子的库仑相互作用对热电效应的影响.结果表明铁磁端口中的磁化方向能够有效地调节能斯特效应:当电极1和电极3中的磁化方向反平行排列时,通过施加横向的温度梯度,系统中将会出现纯的自旋能斯特效应;当电极4从普通金属端口转变为铁磁金属端口时,将同时观测到电荷和自旋能斯特效应.研究发现,能斯特效应对于铁磁电极极化强度的依赖程度较弱,但对库仑排斥作用十分敏感.在量子点内和点间库仑排斥作用的影响下,自旋及电荷能斯特系数有望提高两个数量级.     

Stability of Optically Injected Two‐State Quantum‐Dot Lasers

Simultaneous two‐state lasing is a unique property of semiconductor quantum‐dot (QD) lasers. This not only changes steady‐state characteristics of the laser device but also its dynamic response to perturbations. In this paper we investigate the dynamic stability of QD lasers in an external optical injection setup. Compared to conventional single‐state laser devices, we find a strong suppression of dynamical instabilities in two‐state lasers. Furthermore, depending on the frequency and intensity of the injected light, pronounced areas of bistability between both lasing frequencies appear, which can be employed for fast optical switching in all‐optical photonic computing applications. These results emphasize the suitability of QD semiconductor lasers in future integrated optoelectronic systems where a high level of stability is required.     

Quantum Kinetic Theory of a Massless Scalar Model in the Presence of a Schwarzschild Black Hole

We employ quantum kinetic theory to investigate local quantum physics in the background of spherically symmetric and neutral black holes formed through the gravitational collapse. For this purpose in mind, we derive and study the covariant Wigner distribution function near to and far away from the black‐hole horizon. We find that the local density of the particle number is negative in the near‐horizon region, while the entropy density is imaginary. These pose a question whether kinetic theory is applicable in the near‐horizon region. We elaborate on that and propose a possible interpretation of how this result might nevertheless be self‐consistently understood.     

含石墨烯二维金属结构中的自发辐射研究

研究原子在金属结构中的自发辐射时引入单层石墨烯薄膜,利用石墨烯特殊的光电特性来调控原子的自发辐射率.推导了局态密度与自发辐射率的格林函数表示形式,并结合频域有限差分方法进行了数值模拟.分析结果表明:随着化学势的增大,自发辐射波峰出现蓝移现象,且自发辐射率波峰得到增强,理论上实现了原子自发辐射率峰值位置与幅度的调制.研究结果可以为新型纳米器件及光电子设备的制造和优化提供参考.