Tests of quantum electrodynamics using ion traps

Experiments in ion traps on the g factors for the free and the bound electron in low-Z, hydrogen-like ions have provided the most accurate tests of quantum-electrodynamics calculations. Moreover they have been used to determine new and precise values for fundamental constants. Extensions to more stringent tests using ions of higher values of the nuclear charge Z are on the way. Also other QED tests such as Lamb shifts or hyperfine structures in H-like ions using traps will be feasible in the near future. The tests in bound systems, however, will be limited by nuclear structure effects which are difficult to calculate. Assuming the QED calculations as correct, the experimental results may be used to determine nuclear contributions and thus support nuclear models. Contribution presented at the TCP06, Vancouver Island, 2006.     

Working group report: Quantum chromodynamics

This is the report of the subgroup QCD of Working Group-4 at WHEPP-9. We present the activities that had taken place in the subgroup and report some of the partial results arrived at following the discussion at the working group meetings.     

Quadrupole interactions at 57Fe and 119Sn in 3d-metal antimonides

3d-metal antimonides: Fe_1+x Sb, N_+x Sb, Co_+x Sb and the (Ni_1?y Fe _y )Sb solid solution have been studied by the Mössbauer effect method at ⁵⁷Fe and ¹¹⁹Sn. It was found that the quadrupole interactions at the Fe and Sn nucleus in 3d-metal antimonides are very sensitive to the filling of different crystallographic sites with metal atoms. The metal atoms in trigonal-bipyramidal sites have a strong effect on the quadrupole splitting of ¹¹⁹Sn. They are nearest to anions (Sb or Sn) with the typical axial ratio of c/a = 1.25. The QS(x) dependence of ¹¹⁹ Sn in 3d-metal antimonides in the 0 ≤ x ≤ 0.1 concentration range can be used to determine x – the concentration of transition metal excess relative to the stoichiometric composition.     

孤立分散在SiO2基质中的半导体InSb纳米颗粒界面效应的MS-XANES研究

利用MS-XANES计算研究了嵌入在SiO₂介质中的InSb纳米颗粒的界面效应, 结果显示Sb K-XANES实验谱在白线峰强度增大和白线峰向高能一侧展宽这两个特点的起因是: 1. SiO₂介质透过界面处强的Sb-O共价键间接地影响和改变了InSb团簇中Sb原子内部的势分布; 2. 通过InSb纳米颗粒界面处存在着强的Sb-O共价键使得Sb原子的5p电子被耗尽来提高InSb纳米颗粒Sb原子的5p的空穴数. 这两方面共同决定了InSb纳米颗粒的Sb K-XANES实验谱在白线峰 强度的增大. 此外, 由于纳米颗粒的界面效应, 仅仅把白线峰的强度增大归因于吸收原子电荷转移带来的空穴数增加, 并依此通过白线峰的强度计算吸收原子的空穴数是不合理的.     

q变形对相干态的相位概率分布特性

通过推广Pegg和Barnett的相位算符和相位态到q变形的双模情况, 应用数值计算 研究了q变形对相干态的相位概率分布特性. 结果表明, q变形对相干态的相位概率分布受到相位参数、q参数和参数│ξ│的调节, 从而反映出不同的量子相干特性.     

Analysis of reflectance and modulation spectroscopic lineshapes in optoelectronic device structures

We discuss the spectral lineshapes of reflectance and modulated reflectance (MR) measurements on optoelectronic device structures such as epi-layers, quantum wells (QWs), vertical-cavity surface emitting-lasers (VCSELs) and resonant-cavity light-emitting diodes (RCLEDs). We consider the various methods for the extraction of built-in electric fields and band-gap energies from Franz-Keldysh oscillations (FKO), using the example of a tensilely strained InGaAs QW system, whose InGaAsP barriers yield strong FKO. We describe how critical point transition energies can be easily obtained by eye from Kramers-Kronig (KK) transforms of low field or QW modulation spectra, using the example of the modulated transmittance spectra of dilute-nitrogen InGaAsN p-i-n structures. We also discuss how the ordinary reflectivity spectrum, usually acquired at the same time as the MR signal, may also be exploited to extract layer thicknesses and compositions, and information about the active QW absorption spectrum in VCSEL and RCLED structures.     

Fractal character of effective Hall properties of a three-dimensional disordered composite

The dependencies of the effective Hall properties on a scale, obtained by means of an iterative averaging method, manifest their fractal character. The influence of an intensity of the Hall effect on the fractal character of the Hall properties was considered. Scale ranges and dimensional characteristics of the effective Hall properties behavior were calculated and discussed.     

Algebra with Quadratic Commutation Relations for an Axially Perturbed Coulomb–Dirac Field

The motion of a particle in the field of an electromagnetic monopole (in the Coulomb–Dirac field) perturbed by an axially symmetric potential after quantum averaging is described by an integrable system. Its Hamiltonian can be written in terms of the generators of an algebra with quadratic commutation relations. We construct the irreducible representations of this algebra in terms of second-order differential operators; we also construct its hypergeometric coherent states. We use these states in the first-order approximation with respect to the perturbing field to obtain the integral representation of the eigenfunctions of the original problem in terms of solutions of the model Heun-type second-order ordinary differential equation and present the asymptotic approximation of the corresponding eigenvalues.     

Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE _c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE _G =0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E _c ). From these results, it is suggested that the PEN-FET becomes a memory device.     

The role of emitter quasi-bound state and scattering on intrinsic bistability in resonant tunneling diodes

Usually, numerical self-consistent calculations predict a much larger intrinsic bistability region than actually is measured in resonant tunneling diodes (RTDs). In addition, numerical calculations have shown that scattering in the well reduces bistability. We used a unified treatment of current flowing from continuum states and emitter quasi-bound states to show numerically and analytically that not only the scattering in the quantum well but also the scattering in the emitter reduces bistability. Moreover, within the Hartree approximation, bistability occurs by tunneling resonantly between emitter quasi-bound state and well quasi-bound state as a pitchfork bifurcation.