On fractional quantum Hall solitons in ABJM-like theory

Using D-brane physics, we study fractional quantum Hall solitons (FQHS) in ABJM-like theory in terms of type IIA dual geometries. In particular, we discuss a class of Chern-Simons (CS) quivers describing FQHS systems at low energy. These CS quivers come from R-R gauge fields interacting with D6-branes wrapped on 4-cycles, which reside within a blown up CP³ projective space. Based on the CS quiver method and mimicking the construction of del Pezzo surfaces in terms of CP², we first give a model which corresponds to a single layer model of FQHS system, then we propose a multi-layer system generalizing the doubled CS field theory, which is used in the study of topological defect in graphene.     

Comparison of confinement characters between porous silicon and silicon nanowires

Confinement character and its effects on photoluminescence (PL) properties are theoretically investigated and compared between porous silicon (p-Si) and silicon nanowires (Si-NWs). The method is based on the application of the tight-binding technique using the minimal sp³-basis set, including the second-nearest-neighbor interactions. The results show that the quantum confinement (QC) is not entirely controlled by the porosity, rather it is mainly affected by the average distance between pores (d). The p-Si is found to exhibit weaker confinement character than Si-NWs. The confinement energy of charge carriers decays against d exponentially for p-Si and via a power-law for Si-NWs. This latter type of QC is much stronger and is somewhat similar to the case of a single particle in a quantum box. The excellent fit to the PL data demonstrates that the experimental samples of p-Si do exhibit strong QC character and thus reveals the possibility of silicon clustering into nano-crystals and/or nanowires. Furthermore, the results show that the passivation of the surface dangling bonds by the hydrogen atoms plays an essential role in preventing the appearance of gap states and consequently enhances the optical qualities of the produced structures. The oscillator strength (OS) is found to increase exponentially with energy in Si-NWs confirming the strong confinement character of carriers. Our theoretical findings suggest the existence of Si nanocrystals (Si-NCs) of sizes 1-3 nm and/or Si-NWs of cross-sectional sizes in the 1-3 nm range inside the experimental p-Si samples. The experimentally-observed strong photoluminescence from p-Si should be in favor of an exhibition of 3D-confinement character. The favorable comparison of our theoretical results with the experimental data consolidates our above claims.     

引入反比相关双曲余弦平方势描述超晶格量子阱的电子跃迁

 鉴于“方形”势阱过于简单和理想，引入了反比相关双曲余弦平方势描述超晶格量子阱中的电子运动行为。在量子力学框架内，把电子的Schrodinger方程化为了超几何方程, 并以Ga^1-xAl^xAs-GaAs- Ga^1-xAl^xAs量子阱为例计算了电子的带内跃迁和带间跃迁。结果表明，能级数目和跃迁能量与阱深、阱宽等系统参数有关，只需适当调节这些参数就可望实现对超晶格量子阱光电特征的调节与控制。     

利用微扰法分析两个相互耦合的参量四波混频过程

利用微扰法在旋转波近似下分析了铷原子中两个独立的参量四波混频过程和一个耦合的参量四波混频过程.当用超短激光脉冲相干激发这两个参量四波混频过程时,两个过程就会同时出现并且存在相互耦合作用.微扰分析表明,耦合的参量四波混频信号中可以观察到量子拍,量子拍幅度的大小不仅取决于超短脉冲的特性,而且依赖于两个耦合的参量四波混频过程中的相位匹配.     

Influence of the thickness of the tunnel layer on the charging characteristics of Si nanocrystals embedded in an ultra-thin SiO2 layer

In this paper, we have studied the effect of the thickness of the initial SiO₂ layer (5–7 nm) on the charge and discharge properties of a 2D array of Si nanoparticles embedded in these SiO₂ layers fabricated by ultra-low-energy ion implantation (ULE-II) and annealing. The structural characteristics of these nanocrystal-based memories (position of the nanocrystals with respect to the electrodes, size and surface density of the particles in the plane) were studied by transmission electron microscopy (TEM) and energy filtered TEM (EF-TEM). Electrical characterizations were performed at room temperature using a nano-MOS capacitor to be able to address only a few nanoparticles (nps). EFTEM gives the measurements of oxide thickness, injection, control and nps distances, size and density. I–V and I–t measurements exhibit current peaks and random telegraph signal fluctuations that can be interpreted as due to quantized charging of the nps and to some electrostatic interactions between the trapped charges and the tunnelling current. We have shown that these characteristics strongly vary with the initial oxide thickness, exhibiting several charging/discharging events for the 7-nm-thick layer while charging events prevail in the case of 5-nm-thick layer. These results indicate that the probability of discharging phenomena is reduced when the tunnel layer thickness decreases.     

Temperature dependence of the properties of strong-coupling bipolaron in a quantum dot

Temperature dependence of the properties of strong-coupling bipolaron in a quantum dot (QD) is studied based on the Lee-Low-Pines-Huybrechts variational method and quantum statistical theory. Results of the numerical calculation show that the vibration frequency as well as the absolute value of the induced potential and the effective potential all increase with increasing coupling strength and temperature, respectively, and they also increase with decreasing relative distance of electrons. The bipolarons are closer and more stable when the temperature is higher and coupling strength is larger. The influence of radius of QD and dielectric constant ratio on the effective potential is little.     

Critical behavior of XY spin chain with Dzyaloshinsky-Moriya interaction studied in terms of Loschmidt echo

In this paper, the critical behavior of the general XY spin chain with the Dzyaloshinsky-Moriya (DM) interaction is studied by means of a Loschmidt Echo (LE) calculation. LE presents a Gauss decay in the region of magnetic field intensity |λ|<1 and an exponential decay in the region of |λ|>1. There exists a critical spin chain size N_C. When spin chain size is larger than N_C, the value of λ corresponding to the minimum value of LE (λ_m) is independent of the spin chain size and keeps a stable value. In the region of λ<0, the stable value is same for different DM interactions. In the region of λ>0, the stable value varies with changing DM interaction.     

Emission features of Ho ion in Nb2O5, Ta2O5 and La2O3 mixed Li2O-ZrO2-SiO2 glasses

Li₂O-ZrO₂-SiO₂: Ho³⁺ glasses mixed with three interesting d-block elemental oxides, viz., Nb₂O₅, Ta₂O₅ and La₂O₃, were prepared. Optical absorption and photoluminescence spectra of these glasses have been recorded at room temperature. The luminescence spectra of Nb₂O₅ and Ta₂O₅ mixed Li₂O-ZrO₂-SiO₂ glasses (free of Ho³⁺ ions) have also exhibited broad emission band in the blue region. This band is attributed to radiative recombination of self-trapped excitons (STEs) localized on substitutionally positioned octahedral Ta⁵⁺ and Nb⁵⁺ ions in the glass network. The Judd-Ofelt theory was successfully applied to characterize Ho³⁺ spectra of all the three glasses. From this theory various radiative properties, like transition probability A, branching ratio β_r and the radiative lifetime τ_r, for ⁵S₂ emission levels in the spectra of these glasses have been evaluated. The radiative lifetime for ⁵S₂ level of Ho³⁺ ions has also been measured and quantum efficiencies were estimated. Among the three glasses studied the La₂O₃ mixed glass exhibited the highest quantum efficiency. The reasons for such higher value have been discussed based on the relationship between the structural modifications taking place around the Ho³⁺ ions.     

Exciton lifetime in quantum well with vicinal high-density excitons

Radiative lifetime of an exciton in a GaAs quantum well (QW) is controlled by high-density excitons, which restrict the exciton coherence through scattering. In order to circumvent the phase space filling effect of high-density excitons, we have prepared a QW structure in such a way that a reservoir for high-density excitons is separated from the QW. The lifetime increases (up to 30%) with the exciton density in the reservoir and saturates at 1×10¹⁷/cm³. The upper bound lifetime is determined by the excitonic relative motion.