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41.
The quantum states are presented in these processions of fabricating poly-Si films. Amorphous silicon films prepared by PECVD has been crystallized by conventional furnace annealing (FA) and rapid thermal annealing (RTA), respectively. It is found that the thin films grain size present quantum states with the increasing of the gas flow ratios of SiH4, H2 mixture, substrate temperatures, frequency power, annealing temperature and time. 相似文献
42.
本文采用求解Schroedinger方程和数值计算方法,研究了Ⅴ-型三能级原子与双模奇偶纠缠相干光场相互作用系统的光子统计性质,结果表明:此性质与双模奇偶纠缠相干光场的纠缠程度、失谐量、原子的初态以及双模光的平均光子数相关联. 相似文献
43.
The drawbacks of our earlier report of preparing fuel cell catalyst arrays by borohydride reduction of inkjet prepared arrays of metal salts are discussed along with the need for inclusion of state-of-the-art metrics in all array screening. An alternative method for screening of hydrogen/air cathode catalysts, direct methanol fuel cell (DMFC) anode catalysts, and catalyst loading studies is provided. State-of-the-art Johnson Matthey catalysts were used in control experiments to demonstrate the utility of the array fuel cell for high throughput screening of fuel cell catalysts in the 3-4 mg/cm2 range. This report lays out hard learned rules for high throughput screening and demonstrates that the array fuel cell can be used for very precise screening of libraries of membrane electrode assembly (MEA) components without the pitfalls discussed in the introduction. 相似文献
44.
E. C. Ferreira J. A. P. da Costa J. A. K. Freire G. A. Farias V. N. Freire 《Applied Surface Science》2002,190(1-4):191-194
Confined excitons in non-abrupt GaAs/AlxGa1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al0.3Ga0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces. 相似文献
45.
Jesús Vázquez 《Tetrahedron letters》2006,47(10):1657-1661
Use of a semicarbazide resin for the solid-phase preparation of peptide ketones and aldehyde led to optimal results in terms of both purity of the final product and overall yield. This resin was prepared without complication by activation of the commercial available aminomethyl polystyrene with CDI at room temperature, followed by treatment with tert-butyl carbazate. Furthermore, the TNBSA colorimetric assay has been adapted for checking the incorporation of the carbonyl moiety onto hydrazine-based resins. 相似文献
46.
F. F. Maia Jr. J. A. K. Freire G. A. Farias V. N. Freire E. F. da Silva Jr. 《Applied Surface Science》2002,190(1-4):247-251
The excitonic properties of a ZnSe/ZnSxSe1−x strained quantum well (QW) are calculated taking into account interface effects. Numerical results obtained with ZnS0.18Se0.82/ZnSe QWs show that graded interfaces can be responsible for a strong broadening of excitonic spectra. 相似文献
47.
A. Guzmn E. Luna J. Miguel-Snchez E. Calleja E. Muoz 《Infrared Physics & Technology》2003,44(5-6):377-382
In this work, we report on the design, growth and characterization of GaAsN/AlAs/AlGaAs double barrier quantum well infrared detectors to achieve intraband absorption below 4 μm. Due to the high effective mass of N-dilute alloys, it is common for these N-containing double barrier quantum well structures to have more than one bound state within the quantum well, enabling the possibility of achieving multispectral absorption from these confined levels to the quasi-bound. Based on a transfer matrix calculation we will study the influence of the potential parameters, in particular the well width and the introduction of a GaAs spacer layer in between the N-well and the AlAs barriers. We will compare the case in which there are two confined levels with the case in which only one level is bound, like in the conventional AlGaAs/AlAs/GaAs structures. On the basis of the simulation, we have grown and characterized some N-containing double barrier detectors. Moreover, an optimization of the post-growth annealing treatments of the GaAsN quantum well structures has also been performed. Finally, room temperature absorption measurements of both as-grown and annealed samples are presented and analyzed. 相似文献
48.
The pure state space of Quantum Mechanics is investigated as Hermitian Symmetric Kähler manifold. The classical principles of quantum mechanics (Quantum Superposition Principle, Heisenberg Uncertainty Principle, Quantum Probability Principle) and Spectral Theory of observables are discussed in this non-linear geometrical context. 相似文献
49.
Kouichi Akahane Naokatsu Yamamoto Naoki Ohtani 《Physica E: Low-dimensional Systems and Nanostructures》2004,21(2-4):295
We fabricated InAs quantum dots (QDs) with a GaAsSb strain-reducing layer (SRL) on a GaAs(0 0 1) substrate. The wavelength of emission from InAs QD is shown to be controllable by changing the composition and thickness of the SRL. An increase in photoluminescence intensity with increasing compositions of Sb and thickness of the GaAsSb SRL is also seen. The efficiency of radiative recombination was improved under both conditions because the InAs/GaAsSb/GaAs hetero-interface band structure more effectively suppressed carrier escape from the InAs QDs. 相似文献
50.
S. J. Cheng W. Sheng P. Hawrylak S. Raymond S. Studenikin A. Sachrajda Z. Wasilewski A. Babinski M. Potemski G. Ortner M. Bayer 《Physica E: Low-dimensional Systems and Nanostructures》2004,21(2-4):211
We present results of calculations and experiments on electron–hole complexes in InGaAs/GaAs self-assembled quantum dots in high magnetic field (B). Due to hidden symmetries, the chemical potential of an N-exciton system at special B fields becomes insensitive to the exciton number as well as the magnetic field. This results in plateau regions of high intensity in measured magneto-PL spectrum. Theoretical calculations using exact diagonalization techniques successfully explain the measured magneto-photoluminescence spectrum with B fields up to 28 T. 相似文献