Site control of InAs quantum dot nucleation by ex situ electron-beam lithographic patterning of GaAs substrates

Conventional electron-beam lithographic patterning of GaAs substrates followed by reactive-ion etching of small holes has been successfully used to control the nucleation of InAs dots. We have observed >50% single dot occupancy for holes wide and deep and show that the dot occupancy and dot size can be varied by changing the size of the holes. Luminescence from an array of these site-controlled dots has been demonstrated. Thus this use of substrate patterning is a viable technique to controllably place single dots at pre-determined positions in devices.     

Determination of electron effective mass from optical transition energy in InGaAs/InAlAs quantum wells

Nonparabolic effective mass of conduction subbands in InGaAs/InAlAs quantum wells (QWs), lattice-matched to InP, was quantitatively obtained by analyzing interband-optical transition spectra. Thickness of InGaAs well was 5.3, 9.4, and . Thickness of InAlAs barrier was about , and each QW was independent. Excellent agreement was obtained between experimental mass and theoretical mass predicted by Kane's three-level band theory on bulk InGaAs, in a wide energy range of from the bandedge. Method of experimental analysis on a relation between eigen energy and effective mass was described.     

Optical properties and g factors of GaAs quantum rods

The Hamiltonian of the zinc-blende quantum rods in the framework of eight-band effective-mass approximation in the presence of external homogeneous magnetic field is given. The electronic structure, optical properties and electron g factors of GaAs quantum rods are investigated. We found that the electron g factors are very sensitively dependent on the dimensions of the quantum rods. As some of the three dimensions increase, the electron g factors decrease. The more the dimensions increase, the more the electron g factors decrease. The dimensions perpendicular to the direction of the magnetic field affect the electron g factors more than the other dimension.     

Magneto optics of single photons emitted from single InAs/GaAs self-assembled quantum dots in a planar microcavity

We fully characterize the fine spectral structure of neutral and negatively charged single microcavity quantum dot excitons, using polarization-sensitive magneto-photoluminescence spectroscopy. We show that the microcavity allows the simultaneous detection of both the bright and dark excitons using Faraday configuration. Thus, we were able to fully determine the fine structure and the g-factors of the neutral and negatively charged single exciton states within the same single quantum dot. Our measurements are in excellent agreement with novel, many carrier model calculations, which take into account Coulomb and exchange interactions among all the confined e–h pair states.     

Comparison of the band alignment of strained and strain-compensated GaInNAs QWs on GaAs and InP substrates

We present a comparison of the band alignment of the Ga_1−xIn_xN_yAs_1−y active layers on GaAs and InP substrates in the case of conventionally strained and strain-compensated quantum wells. Our calculated results present that the band alignment of the tensile-strained Ga_1−xIn_xN_yAs_1−y quantum wells on InP substrates is better than than that of the compressively strained Ga_1−xIn_xN_yAs_1−y quantum wells on GaAs substrates and both substrates provide deeper conduction wells. Therefore, tensile-strained Ga_1−xIn_xN_yAs_1−y quantum wells with In concentrations of x0.53 on InP substrates can be used safely from the band alignment point of view when TM polarisation is required. Our calculated results also confirm that strain compensation can be used to balance the strain in the well material and it improves especially the band alignment of dilute nitride Ga_1−xIn_xN_yAs_1−y active layers on GaAs substrates. Our calculations enlighten the intrinsic superiority of N-based lasers and offer the conventionally strained and strain-compensated Ga_1−xIn_xN_yAs_1−y laser system on GaAs and InP substrates as ideal candidates for high temperature operation.     

Long wavelength InAs self-assembled quantum dots embedded in GaNAs strain-compensating layers

We investigated the effect of GaNAs strain-compensating layers (SCLs) on the properties of InAs self-assembled quantum dots (QDs) grown on GaAs (0 0 1) substrates. The GaNAs material can be used as SCL thereby minimizing the net strain, and thus is advantageous for multi-stacking of InAs QDs structures and achieving long wavelength emission. The emission wavelength of InAs QDs can be tuned by changing the nitrogen (N) composition in GaNAs SCLs due to both effects of strain compensation and lowering of potential barrier height. A photoluminescence emission at 77 K was clearly observed for sample with GaN_0.024As_0.976 SCL. Further, we observed an improvement of optical properties of InAs QDs by replacing the more popular GaAs embedding layers with GaNAs SCLs, which is a result of decreasing non-radiative defects owing to minimizing the total net strain.     

Observations of nascent superfluidity in a bilayer two-dimensional electron system at

Single-layer longitudinal and Hall resistances have been measured in a bilayer two-dimensional electron system at ν_T=1 with equal but oppositely directed currents flowing in the two layers. At small effective layer separation and low temperature, the bilayer system enters an interlayer coherent state expected to exhibit superfluid properties. We detect this nascent superfluidity through the vanishing of both resistances as the temperature is reduced. This corresponds to the counterflow conductivity rising rapidly as the temperature falls, reaching by . This supports the prediction that the ground state of this system is an excitonic superfluid.     

Continuum variable entangled state generated by an asymmetric beam splitter

For an asymmetric beam-splitter a new kind of entangled state is introduced, we then derive the integration measure with which such states can make up a complete and orthonormal representation in two-mode Fock space. We then show how to use in finding new squeezing operator and new squeezed state, whose generation can relies on the asymmetric beamsplitter.     

A mathematical and computational review of Hartree–Fock SCF methods in quantum chemistry

We present a review of the fundamental topics of Hartree–Fock theory in quantum chemistry. From the molecular Hamiltonian, using and discussing the Born–Oppenheimer approximation, we arrive at the Hartree and Hartree–Fock equations for the electronic problem. Special emphasis is placed on the most relevant mathematical aspects of the theoretical derivation of the final equations, and on the results regarding the existence and uniqueness of their solutions. All Hartree–Fock versions with different spin restrictions are systematically extracted from the general case, thus providing a unifying framework. The discretization of the one-electron orbital space is then reviewed and the Roothaan–Hall formalism introduced. This leads to an exposition of the basic underlying concepts related to the construction and selection of Gaussian basis sets, focusing on algorithmic efficiency issues. Finally, we close the review with a section in which the most relevant modern developments (especially those related to the design of linear-scaling methods) are commented on and linked to the issues discussed. The paper is intentionally introductory and rather self-contained, and may be useful for non-experts intending to use quantum chemical methods in interdisciplinary applications. Moreover, much material that can be found scattered in the literature has been put together to facilitate comprehension and to serve as a handy reference.     

Measurement of momentum distribution of lightatoms and molecules in condensed matter systems using inelastic neutron scattering

Studies of single-particle momentum distributions in light atoms and molecules are reviewed with specific emphasis on experimental measurements using the deep inelastic neutron scattering technique at eV energies. The technique has undergone a remarkable development since the mid-1980s, when intense fluxes of epithermal neutrons were made available from pulsed neutron sources. These types of measurements provide a probe of the short-time dynamics of the recoiling atoms or molecules as well as information on the local structure of the materials. The paper introduces both the theoretical framework for the interpretation of deep inelastic neutron scattering experiments and thoroughly illustrates the physical principles underlying the impulse approximation from light atoms and molecules. The most relevant experimental studies performed on a variety of condensed matter systems in the last 20 years are reviewed. The experimental technique is critically presented in the context of a full list of published work. It is shown how, in some cases, these measurements can be used to extract directly the effective Born–Oppenheimer potential. A summary of the progress made to date in instrument development is also provided. Current data analysis and the interpretation of the results for a variety of physical systems is chosen to illustrate the scope and power of the method. The review ends with a brief consideration of likely developments in the foreseeable future. Particular discussion is given to the use of the VESUVIO spectrometer at ISIS.

Measurement of momentum distribution of lightatoms and molecules in condensed matter systems using inelastic neutron scattering

All authors

C. Andreani, D. Colognesi, J. Mayers, G. F. Reiter &; R. Senesi

https://doi.org/10.1080/00018730500403136

Published online:

19 February 2007

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