Donor impurity states in zinc-blende GaN/AlGaN quantum well: Quantum confinement and laser-dressed effects

Within the framework of effective-mass approximation, the effects of a laser field on the ground-state donor binding energy in zinc-blende (ZB) GaN/AlGaN quantum well (QW) have been investigated variationally. Numerical results show that the donor binding energy is highly dependent on QW structure parameters and Al composition in ZB GaN/AlGaN QW. The laser field effects are more noticeable on the donor binding energy of an impurity localized inside the QW with small well width and low Al composition. However, for the impurity located in the vicinity of the well edge of the QW, the donor binding energy is insensible to the variation of Al composition, well width and laser field intensity in ZB GaN/AlGaN QW. In particular, the competition effects between laser field and quantum confinement on impurity states have also been investigated in this paper.     

Analysis of reflectance and modulation spectroscopic lineshapes in optoelectronic device structures

We discuss the spectral lineshapes of reflectance and modulated reflectance (MR) measurements on optoelectronic device structures such as epi-layers, quantum wells (QWs), vertical-cavity surface emitting-lasers (VCSELs) and resonant-cavity light-emitting diodes (RCLEDs). We consider the various methods for the extraction of built-in electric fields and band-gap energies from Franz-Keldysh oscillations (FKO), using the example of a tensilely strained InGaAs QW system, whose InGaAsP barriers yield strong FKO. We describe how critical point transition energies can be easily obtained by eye from Kramers-Kronig (KK) transforms of low field or QW modulation spectra, using the example of the modulated transmittance spectra of dilute-nitrogen InGaAsN p-i-n structures. We also discuss how the ordinary reflectivity spectrum, usually acquired at the same time as the MR signal, may also be exploited to extract layer thicknesses and compositions, and information about the active QW absorption spectrum in VCSEL and RCLED structures.     

Complex-valued fractional statistics for D-dimensional harmonic oscillators

A system of isotropic harmonic oscillators obeying the Polychronakos fractional statistics with a complex parameter in a space having the dimension D>1$D>1$ is studied. Temperature dependences of the thermodynamic functions are analyzed in different temperature domains. The nature of the observed phase transitions is clarified. Both numerical and analytical estimates for the critical temperature are made depending on the number of particles, space dimensionality, and statistics parameter. Approximate correspondence with some other fractional statistics types is established.     

Finite size effects on the optical transitions in quantum rings under a magnetic field

We present a theoretical study of the energy spectrum of single electron and hole states in quantum dots of annular geometry under a high magnetic field along the ring axis in the frame of uncorrelated electron-hole theory. We predict the periodic disappearance of the optical emission of the electron-hole pair as the magnetic field increases, as a consequence of the finite height of the barriers. The model has been applied to semiconductor rings of various internal and external radii, giving as limiting cases the disk and antidot.     

Energy levels in doped SiGe quantum well studied by admittance spectroscopy

SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 10²⁰ cm⁻³ becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing.     

Monotonically increasing functions of any quantum correlation can make all multiparty states monogamous

Monogamy of quantum correlation measures puts restrictions on the sharability of quantum correlations in multiparty quantum states. Multiparty quantum states can satisfy or violate monogamy relations with respect to given quantum correlations. We show that all multiparty quantum states can be made monogamous with respect to all measures. More precisely, given any quantum correlation measure that is non-monogamic for a multiparty quantum state, it is always possible to find a monotonically increasing function of the measure that is monogamous for the same state. The statement holds for all quantum states, whether pure or mixed, in all finite dimensions and for an arbitrary number of parties. The monotonically increasing function of the quantum correlation measure satisfies all the properties that are expected for quantum correlations to follow. We illustrate the concepts by considering a thermodynamic measure of quantum correlation, called the quantum work deficit.     

Symmetry breaking in quantum chaotic systems

We show, using semiclassical methods, that as a symmetry is broken, the transition between universality classes for the spectral correlations of quantum chaotic systems is governed by the same parametrization as in the theory of random matrices. The theory is quantitatively verified for the kicked rotor quantum map. We also provide an explicit substantiation of the random matrix hypothesis, namely that in the symmetry-adapted basis the symmetry-violating operator is random.     

Experimental confirmation of a new reversed butterfly-shaped attractor

This paper reports a new reverse butterfly-shaped chaotic attractor and its experimental confirmation. Some basic dynamical properties, and chaotic behaviours of this new reverse butterfly attractor are studied. Simulation results support brief theoretical derivations. Furthermore, the system is experimentally confirmed by a simple electronic circuit.     

Tunable light emission and decaying process of photoluminescence from a nanostructured Si-in-SiNx film

Strong photoluminescence (PL) covering the green-violet band was measured at room temperature in an as-deposited amorphous Si-in-SiN_x film, which was prepared by plasma-enhanced chemical vapor deposition on cold (below 60 °C) Si(1 0 0) wafer. With an increase in photon energy of excitation, the PL shifts its peak position from 510 to 416 nm at yet-comparable intensities, thus allowing an energy-selected excitation in practical application. Also, a time-resolved analysis was performed for the emissions at various wavelengths, which showed a decay time shorter than 1.0 ns. These results indicate that the nanostructured Si-in-SiN_x can be a promising candidate material for the fabrication of silicon-based optical interconnections and switches.