Transport properties of a single-quantum dot Aharonov-Bohm interferometer

We consider a two-terminal Aharonov-Bohm (AB) interferometer with a quantum dot inserted in one path of the AB ring. We investigate the transport properties of this system in and out of the Kondo regime. We utilize perturbation theory to calculate the electron self-energy of the quantum dot with respect to the intradot Coulomb interaction. We show the expression of the Kondo temperature as a function of the AB phase together with its dependence on other characteristics such as the linewidth of the ring and the finite Coulomb interaction and the energy levels of the quantum dot. The current oscillates periodically as a function of the AB phase. The amplitude of the current oscillation decreases with increasing Coulomb interaction. For a given temperature, the electron transport through the AB interferometer can be selected to be in or out of the Kondo regime by changing the magnetic flux threading perpendicular to the AB ring of the system.     

SCDA for 3D lattice gases with repulsive interaction

The selfconsistent diagram approximation (SCDA) is generalized for three-dimensional lattice gases with nearest neighbor repulsive interactions. The free energy is represented in a closed form through elementary functions. Thermodynamical (phase diagrams, chemical potential and mean square fluctuations), structural (order parameter, distribution functions) as well as diffusional characteristics are investigated. The calculation results are compared with the Monte Carlo simulation data to demonstrate high precision of the SCDA in reproducing the equilibrium lattice gas characteristics. It is shown that similarly to two-dimensional systems the specific statistical memory effects strongly influence the lattice gas diffusion in the ordered states. Received 7 August 2002 / Received in final form 22 January 2003 Published online 24 April 2003     

The Percolation Transition for the Zero-Temperature Stochastic Ising Model on the Hexagonal Lattice

On the planar hexagonal lattice , we analyze the Markov process whose state (t), in , updates each site v asynchronously in continuous time t0, so that _v (t) agrees with a majority of its (three) neighbors. The initial _v (0)'s are i.i.d. with P[ _v (0)=+1]=p[0,1]. We study, both rigorously and by Monte Carlo simulation, the existence and nature of the percolation transition as t and p1/2. Denoting by ⁺(t,p) the expected size of the plus cluster containing the origin, we (1) prove that ⁺(,1/2)= and (2) study numerically critical exponents associated with the divergence of ⁺(,p) as p1/2. A detailed finite-size scaling analysis suggests that the exponents and of this t= (dependent) percolation model have the same values, 4/3 and 43/18, as standard two-dimensional independent percolation. We also present numerical evidence that the rate at which (t)() as t is exponential.     

Families of Line-Graphs and Their Quantization

Any directed graph G with N vertices and J edges has an associated line-graph L(G) where the J edges form the vertices of L(G). We show that the non-zero eigenvalues of the adjacency matrices are the same for all graphs of such a family L ⁿ (G). We give necessary and sufficient conditions for a line-graph to be quantisable and demonstrate that the spectra of associated quantum propagators follow the predictions of random matrices under very general conditions. Line-graphs may therefore serve as models to study the semiclassical limit (of large matrix size) of a quantum dynamics on graphs with fixed classical behaviour.     

Dynamical chiral-symmetry breaking at T = 0 and T ≠ 0 in the Schwinger-Dyson equation with lattice QCD data

Dynamical chiral-symmetry breaking (DCSB) in QCD is investigated in the Schwinger-Dyson (SD) formalism based on lattice QCD data. From the quenched lattice data for the quark propagator in the Landau gauge, we extract the SD integral kernel function, the product of the quark-gluon vertex and the polarization factor in the gluon propagator, in an Ansatz-independent manner. We find that the SD kernel function exhibits the characteristic behavior of nonperturbative physics, such as infrared vanishing and strong enhancement at the intermediate-energy region around p 0.6GeV. The infrared and intermediate energy region (0.4GeV < p < 1.5GeV) is found to be most relevant for DCSB from analysis on the relation between the SD kernel and the quark mass function. We apply the lattice-QCD-based SD equation to thermal QCD, and calculate the quark mass function at the finite temperature. Spontaneously broken chiral symmetry is found to be restored at high temperature above 110 MeV.     

Use of non-adiabatic geometric phase for quantum computing by NMR

Geometric phases have stimulated researchers for its potential applications in many areas of science. One of them is fault-tolerant quantum computation. A preliminary requisite of quantum computation is the implementation of controlled dynamics of qubits. In controlled dynamics, one qubit undergoes coherent evolution and acquires appropriate phase, depending on the state of other qubits. If the evolution is geometric, then the phase acquired depend only on the geometry of the path executed, and is robust against certain types of error. This phenomenon leads to an inherently fault-tolerant quantum computation. Here we suggest a technique of using non-adiabatic geometric phase for quantum computation, using selective excitation. In a two-qubit system, we selectively evolve a suitable subsystem where the control qubit is in state |1, through a closed circuit. By this evolution, the target qubit gains a phase controlled by the state of the control qubit. Using the non-adiabatic geometric phase we demonstrate implementation of Deutsch-Jozsa algorithm and Grover's search algorithm in a two-qubit system.     

Effects of Si-doped GaAs layer on optical properties of InAs quantum dots

We have investigated the optical properties of InAs self-assembled quantum dots (SAQDs) with the Si-doped GaAs barrier layer. Two types of samples are fabricated according to the position of the Si-doped GaAs layer. For type A samples the Si-doped GaAs layer is grown below the QDs, whereas for type B samples the Si-doped GaAs layer is grown above the QDs. For both types of samples the excited-state emissions caused by state filling are observed in photoluminescence (PL) spectra at high excitation power densities. The bandgap renormalization of QDs can be found from the shift of the PL peak energy. Particularly, for type A samples the Si atoms act as nucleation centers during the growth of InAs QDs on the Si-doped GaAs layer and affect the density and the size of the QDs. The Si-doped GaAs layer in type A samples has more effects on the properties of QDs, such as state filling and bandgap renormalization than those of type B samples.     

Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier

We investigate the effects of a thin AlAs layer with different position and thickness on the optical properties of InAs quantum dots (QDs) by using transmission electron microscopy and photoluminescence (PL). The energy level shift of InAs QD samples is observed by introducing the thin AlAs layer without any significant loss of the QD qualities. The emission peak from InAs QDs directly grown on the 4 monolayer (ML) AlAs layer is blueshifted from that of reference sample by 219 meV with a little increase in FWHM from 42–47 meV for ground state. In contrast, InAs QDs grown under the 4 ML AlAs layer have PL peak a little redshifted to lower energy by 17 meV. This result is related to the interdiffusion of Al atom at the InAs QDs caused by the annealing effect during growing of InAs QDs on AlAs layer.     

The polaron effect on the binding energy of a shallow donor impurity in quantum-well wires in an electric field

Using a variational technique, the effect of electron-longitudinal optical (LO) phonon interaction on the ground and the first few excited states of a hydrogenic impurity in a semiconductor quantum wire of rectangular cross section under an external electric field is studied theoretically for the impurity atom doped at various positions. The results for the binding energy as well as polaronic correction are obtained as a function of the size of the wire, the applied uniform electric field and the position of the impurity. It is found that the presence of optical phonons changes significantly the values of the impurity binding energies of the system. Taking into account the electron–LO phonon interaction the 1s→2p_y and 1s→2p_z transition energies are calculated as a function of applied electric field for different impurity positions.     

Crossover from BCS-superconductivity to Bose-condensation

Starting from a model of free Fermions in two dimensions with an arbitrary strong effective interaction, we derive a Ginzburg-Landau theory describing the crossover from BCS-superconductivity to Bose-condensation. We find a smooth crossover from the standard BCS-limit to a Gross-Pitaevski type equation for the order parameter in a Bose superfluid. The mean field transition temperature exhibits a maximum at a coupling strength, where the behaviour crosses over from BCS to Bose like with corresponding values of 2 Δ₀/T_c ≈ 5 which are characteristic for high T_c superconductors.