Experimental and Theoretical Studies of a Pulsed Microwave Excited Ar/CF4 Plasma

The present work deals with a pulsed microwave discharge in an Ar/CF ₄ gas mixture under a low pressure (1–10 mbar). The discharge chamber developed has a cylindrical geometry with a coupling window alternatively made of quartz or alumina. The setup allows one to investigate the plasma–wall interactions (here etching of the quartz window) and the ignition process of the pulsed microwave plasma. Microwave pulses with a duration of 50–200 s and repetition rate between 1 and 10 kHz are typical for the experiments. The space-time behavior of the fluorine number density in the discharge has been investigated experimentally by optical actinometry. The discharge kinetics is modeled using electron-transport parameters and rate coefficients derived from solutions of the Boltzmann equation. Together with the solution of the continuity and electron balance equations and the rate equations describing the production of CF _x (x=2, 3, 4) radicals and F atoms, a good agreement between experimental and theoretical data can be achieved.     

Application of relaxation periods during electrodialysis of a casein solution: Impact on anion-exchange membrane fouling

Electrodialysis (ED) is a membrane process used on a large scale. However, one of the common problems is fouling of ion-exchange membranes stacked in the cell. The use of pulsed power, consisting in applying a constant current density during a fixed time of application (T_on) followed by a pause duration (T_off), was demonstrated recently as an effective fouling mitigation method for electrodialysis. Up until now, no work has investigated the potential of electrodialysis using pulsed electric field on protein fouling. The aim of the present work was to study the influence of pulsed electric field (PEF) with a low frequency square shaped periodic signal (T_on = 10 s–T_off = 10 s, T_on = 10 s–T_off = 40 s) in comparison with dc current during electrodialysis of a casein solution at different current densities (10, 20 and 30 mA/cm²) on membrane fouling. It appeared from these results that PEF, under certain conditions of pulse, would avoid fouling on anion-exchange membranes. For 10 s–40 s pulsed electric field conditions, no fouling was observed with any density, while for 10 s–10 s PEF conditions, fouling appeared only at current density over 10 mA/cm². dc current, whatever the current density conditions, led to a fouling on the diluate side of the AEM. Furthermore, when fouling occurred, magnitude layer thickness and dry weight increased with the applied current density. The nature of the fouling was identified as 97% protein. The protein fouling would be due to the dissociation of water molecules and/or heat increase at the anion-exchange membrane interface. The relaxation time of the pulse would limit both phenomena on the membrane.     

脉冲激光引信用PFM和PWM式LD驱动电路的研究

 在激光引信的通讯系统中，针对引信用脉冲式半导体激光器驱动电路的脉冲宽度、频率、功率可调的需要，根据LD驱动电路的工作原理，建立了LD驱动电路的一般模型。然后用电子多频振荡器提供驱动信号，用双MOS驱动器来驱动半导体激光器，通过大量的实验、仿真、分析、比较，设计出了方便可调的大功率LD的驱动电路，该电路的脉冲频率和脉冲宽度可方便调整。并且该驱动电路的频率调节范围大（10Hz~20kHz）；脉冲宽度可以从几ns到几百ns进行调节，大大提高了激光引信通讯系统的性能与可靠性。     

Observation of defect clustering in Gd-doped calcium fluoride

Abstract

Solid solutions Ca_1-xGd_xF_2+x for 3 × 10^?7≤ x ≤10^?1 have been studied by electron paramagnetic resonance (EPR) and ionic thermal currents (ITC). The EPR experiments show the presence of two single-ion sites a cubic and a tetragonal Gd³⁺ center which co-exist with comparable abundances for intermediate impurity concentrations. The cubic center predominates at very low and high concentrations. Seven different relaxation processes have been identified from the ITC spectra and the variation of their intensity vs. x was measured. The absolute concentrations of the cubic and nn Gd³⁺ dipoles were calculated. The scavenging of interstitial fluorines by the neutral clusters explains both the abundance of cubic sites at high concentration and the variety of orientable clusters detected by ITC.     

Thermalization of the flow of sputtered target atoms during ion-plasma deposition of films

The boundary of the zone in which sputtered atoms are thermalized in the substrate–target drift space during the ion-plasma magnetron deposition of films is determined theoretically and experimentally. A comparison of the thicknesses of films deposited on the front and back sides of substrates situated at different distances from the target makes it possible to divide the flow of atoms sputtered toward substrates into direct and diffusion flows and to determine the dimensions of the spatial zone in which sputtered atoms are thermalized. The experimental data are in quantitative agreement with the results of a statistical simulation of the thermalization process of atomic particles during the ion-plasma deposition. This simulation enables optimization of the technology of defect-free growth of films with uniform thickness on substrates with complex 3D configuration.     

Erosion of Thin Foils by Sputtering in Hollow Cathodes

A thin copper foil placed diagonally in a cylindrical copper hollow cathode undergoes fast erosion caused by cathode sputtering. Changes in the foil shape are related to current distribution along the hollow cathode axis. The experimental results aid in understanding the increase in spectral lines intensities emitted from conical bottom hollow cathode lamps.     

Proton conduction in the binary system (1 − x)CsHSeO4–xKHSeO4 studied with a free-energy model

Electrical Impedance Spectroscopy (EIS) was used to study the electrical properties of the (1???x)CsHSeO₄–xKHSeO₄ binary system with concentrations x?=?0.0 and 0.1. The results show a higher proton-conduction phase above 80°C for both concentrations, however, while DC conductivity of CsHSeO₄ shows a gradual change to higher values in the 80–118°C temperature range, the 0.9CsHSeO₄–0.1KHSeO₄ concentration reveals an abrupt change at about 80°C to an intermediate temperature phase. The observed behavior for the doped sample was modeled using a trial free-energy density, based on the concentration of mobile ions, that takes into account the formation of defects, configurational and phonon entropies, and defect-defect interactions. By minimising the free-energy density one obtains two roots for the carrier concentration at a given temperature, which corresponds to a stable and metastable configuration. It is possible to characterise the phase behavior of the system by means of temperature and two model parameters, which depend on the crystalline properties of the system, but not on temperature. One can successfully explain the conductivity behavior of the system by changing the model parameters if it is assumed that its variations are due to the carriers density.     

The formation of an oscillating system during the sputtering of sapphire single crystal with pulsed glow discharge

Sapphire (α-Al₂O₃, transparent corundum) single crystals were analyzed with pulsed direct current glow discharge mass spectrometry. Combined hollow cathode was used as a discharge cell. To obtain stable sputtering of dielectric material, a formation of initial surface conductivity via preliminary vacuum deposition of thin metallic layer was proposed. Al and Ta film of different thickness (30–200 nm) were considered for this purpose. The approach was found to provide the effective sputtering of dielectrics. The formation of an oscillating system was shown during the sputtering of sapphire samples in a tantalum combined hollow cathode cell. For oriented sapphire single crystals, periodic oscillations of ²⁷Al⁺ intensity were acquired. This phenomenon was observed only for dielectric single crystals and not for other dielectric samples, e.g. alumina ceramic or fused quartz. The linear dependence of oscillation period on the duration of discharge pulse was found. The origin of these oscillations seems to be attributed to periodic fluctuations of surface conductivity. Oscillation periods calculated for two different orientations of sapphire single crystals (001 and 012) were found to be proportional to the main period of sapphire lattice. Therefore, an assumption that the crystal internal structure of the sample might be the cause of the oscillations is discussed.     

Summary of ISO/TC 201 Standard: ISO 22415—Surface chemical analysis—Secondary ion mass spectrometry—Method for determining yield volume in argon cluster sputter depth profiling of organic materials

The International Standard ISO 22415 provides methods to measure sputtering yield volumes of organic test materials using argon cluster ions. The test materials should consist of thin films of known thicknesses between 50 and 1000 nm. The format of the test materials, the measurement of sputtering ion dose, sputtered depth, and reporting requirements for sputtering yield volumes are described.