A DC excited waveguide multibeam CO2 laser using high frequency pre-ionization technique

High power industrial multibeam CO₂ lasers consist of a large number of closely packed parallel glass discharge tubes sharing a common plane parallel resonator. Every discharge tube forms an independent resonator. When discharge tubes of smaller diameter are used and the Fresnel numberN ≪ 1 for all resonators, they operate in waveguide mode. Waveguide modes have excellent discrimination of higher order modes. A DC excited waveguide multibeam CO₂ laser is reported having six glass discharge tubes. Simultaneous excitation of DC discharge in all sections is achieved by producing pre-ionization using an auxiliary high frequency pulsed discharge along with its other advantages. Maximum 170 W output power is obtained with all beams operating in EH₁₁ waveguide mode. The specific power of 28 W/m is much higher as compared to similar AC excited waveguide multibeam CO₂ lasers. Theoretical analysis shows that all resonators of this laser will support only EH₁₁ mode. This laser is successfully used for woodcutting     

后退火温度对溅射沉积Pb(Zr0.52Ti0.48)O3铁电薄膜结构和性能的影响

在具有Ti缓冲层的Pt(111)底电极上,用射频溅射工艺在较低的衬底温度(370℃)和纯Ar气氛中沉积Pb(Zr0.52Ti0.48)O3(PZT)薄膜,沉积过程中基片架作15°摇摆以提高膜厚的均匀性。然后将样品在大气中进行5min快速热退火处理,退火温度550-680℃。用XRD、SEM分析薄膜的微结构,RT66A标准铁电测试系统测量样品的铁电和介电性能。结果表明,所沉积的Pt为(111)取向,仅当后退火温度高于580℃,沉积在Pt(111)上的PZT薄膜才能形成钙钛矿结构的铁电相,退火温度在580-600℃时结晶为(110)择优取向,退火温度高于600℃时结晶为(111)择优取向。PZT薄膜的极化强度随退火温度的升高而增加,但退火温度超过650℃时漏电流急剧上升,因此退火处理的温度对PZT薄膜的结构和性能有决定性的影响。     

轴线起爆式螺线管型爆磁压缩发生器理论模型

 对轴线起爆式螺线管型爆磁压缩发生器进行了理论模型研究，建立了爆炸管的一维爆轰驱动模型、螺线管内空间磁场强度分布模型、爆炸管外表面磁压力模型和发生器系统的等效电路模型等，对此类发生器的物理过程进行系统描述。在此基础上，编制了相应的零维数值模拟程序CEMG 1.0，利用该程序分别对四种不同模型参数的发生器进行了理论计算和参数优化，并对其中一模型发生器爆炸管外表面的磁压力及其引起的剩余电感进行了计算，给出了剩余电感与初始输入条件及负载电感的关系，从而得到该模型的输出性能极限。对理论模型的正确性进行了实例验算证明。     

离焦散斑技术研究Kirchhoff板在动载作用期的弯曲

本文使用动态离焦散斑技术,测试板的动态弯曲获得成功。并推导了Kirchhoff板动态变形的有关分析,提出了由最大斜率确定材料常数的思想。显然,这是同离焦散斑方法所测数据直接相关的处理手法。     

Characteristics of Ti0.97Co0.03O2:Sb0.01 dilute magnetic semiconducting thin films deposited at 500 °C by pulsed laser deposition

Epitaxial Ti_0.97Co_0.03O₂:Sb_0.01(TCO:Sb) films were deposited on R-Al₂O₃ (1 1 0 2) substrates at 500 °C in various deposition pressures by pulsed laser deposition. The solubility of cobalt within the films increases with decreasing deposition pressure at a deposition temperature of 500 °C. The TCO:Sb films deposited at 5×10⁻⁶ Torr exhibit a p-type anomalous Hall effect having a hole concentration of 6.1×10²²/cm³ at 300 K. On the other hand, films deposited at 4×10⁻⁴ Torr exhibits an n-type anomalous Hall effect having an electron concentration of about 1.1×10²¹/cm³. p- or n-type DMS characteristics depends on the change of the structure of TCO:Sb films and the solubility of Co is possible by controlling the deposition pressure.     

Growth of oxide thin films for optical gas sensor applications

Tungsten trioxide and titanium dioxide thin films were synthesised by pulsed laser deposition. We used for irradiations of oxide targets an UV KrF* (λ = 248 nm, τ_FWHM ≅ 20 ns, ν = 2 Hz) excimer laser source, at 2 J/cm² incident fluence value. The experiments were performed in low oxygen pressure. The (0 0 1) SiO₂ substrates were heated during the thin film deposition process at temperature values within the 300-500 °C range. The structure and crystalline status of the obtained oxide thin films were investigated by high resolution transmission electron microscopy. Our analyses show that the films are composed by nanoparticles with average diameters from a few to a few tens of nm. Moreover, the films deposited at substrate temperatures higher than 300 °C are crystalline. The tungsten trioxide films consist of a mixture of triclinic and monoclinic phases, while the titanium dioxide films structure corresponds to the tetragonal anatase phase. The oxide films average transmittance in the visible-infrared spectral range is higher than 80%, which makes them suitable for sensor applications.     

Optical properties of In2O3 oxidized from InN deposited by reactive magnetron sputtering

Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In₂O₃ films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, ∼1.8-1.9 eV. After the annealing process at 500 °C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In₂O₃:Zn films were identified as the free-exciton (FE) or the near band-to-band (B-B) and conduction-band-to-acceptor (C-A) recombination, respectively.     

WOx/TiO2光催化剂的可见光催化活性机理探讨

采用磁控溅射技术在用浸渍提拉法制得的TiO2薄膜上，溅射氧化钨层,通过气相反应中光催化降解二甲苯的实验表明，WOx/TiO2薄膜具有可见光活性.通过UV-Vis吸收光谱、X射线光电子能谱（XPS）等方法对其可见光活性的机理进行探索.UV-Vis吸收光谱表明WOx,TiO2对可见光响应的范围有一定的扩展,吸收强度增加.XPS表明WOx/TiO2薄膜表面形成了明显的W杂质能级和Ti缺陷能级,这是WOx/TiO2在可见光范围有一吸收的主要原因,也是光催化剂具有可见光活性的必要条件之一，同时杂质能级的存在使半导体费米能级上移,载流子增加,光催化效率提高.     

Properties of ITO films prepared by reactive magnetron sputtering

Indium tin oxide (ITO) thin films were deposited by mid frequency pulsed dual magnetron sputtering using a metallic alloy target with 10 wt.% tin in an atmosphere of argon and oxygen. The aim of the work was to study the interdependence of structural, electrical and optical properties of ITO films deposited in the reactive and transition target mode, respectively. The deposition rate in the transition mode exceeds the deposition rate in the reactive mode by a factor of six, a maximum value of 100 nm·m min⁻¹ could be achieved. This corresponds to a static deposition rate of 200 nm min⁻¹. The lowest electrical resistivity of 1.1·10⁻³ Ω cm was measured at samples deposited in the high oxygen flow range in the transition mode. The samples show a good transparency in the visible range corresponding to extinction coefficients being below 10⁻². X-ray diffraction was used to characterise crystalline structure as well as film stress. ITO films prepared in the transition mode show a slightly preferred orientation in (211) direction, whereas films deposited in the reactive mode are strongly (222) oriented. Compared to undoped In₂O₃ all samples have an enlarged lattice. The lattice strain perpendicular to the surface is about 0.8% and 2.0% for films grown in the transition and the reactive mode, respectively. Deposition in the transition mode introduces a biaxial film stress in the range of −300 MPa, while stress in reactive mode samples is −1500 MPa.     

High-performance anion-exchange chromatography of carbohydrates using a new resin and pulsed amperometric detection

Summary This paper reports the results of a study on the use of a new polymer-based, strong anion-exchange, stationary phase for rapid and selective separation of carbohydrates and related compounds by high-pH, anion-exchange chromatography with pulsed amperometric detection. The new adsorbent has been obtained by direct nitration of 2.8 μm, spherical non-porous highly cross-linked, styrene-divinylbenzene copolymer beads, followed by reduction of superficially introduced nitro groups with nascent hydrogen and quaternization of the resultant amino groups with iodomethane. It is reported that by optimizing the ionic strength of the mobile phase, columns packed with the new anion-exchanger can be successfully employed to separate, either in isocratic or gradient elution mode, oligosaccharides, positional isomers of gluco-disaccharides, as well as uronic acids and sugar monophosphates.