大电流两电极气体开关研究

 由于引燃管难以满足现在能源系统对放电开关承受大电流的要求,因此研制了大电荷转移量两电极气体开关。这种新型气体开关电极间距可调,无触发极,采用同轴结构,并将主电极置于金属腔体内,减少了放电对绝缘支撑的污染。主电极为铜钨合金材料,设计为平顶圆柱状,以提高烧蚀均匀度和热传导效率,减少电极材料喷溅,延长其寿命。绝缘支撑采用碗状结构,提高了机械强度,增加了沿面击穿距离。该开关工作电压达25 kV,放电电流超过100 kA（脉冲宽度600 μs）,单次脉冲电荷转移量达50 C。实验结果显示该气体开关触发性能稳定,电极表面烧蚀均匀,多次大电流实验后电极表面保持完好,可应用于强激光能源系统。     

多条形电极束流能散度探测器的张角优化

 采用Surperfish对北京正负电子对撞机的多条形电极束流能散度探测器进行了电磁场模拟计算。在带模拟束流的情况下,计算分析了探测器对束流位置和能散度的分辨能力与电极张角之间的关系,首次计算了条形电极间的电容耦合综合强度。电极张角优化结果表明：在不考虑噪声水平的情况下,电极张角为20°时,探测器的灵敏度和分辨率达到最优。而当噪声影响很大时,可以适当增加电极张角,同时考虑减小噪声的措施。     

高反射率p-GaN欧姆接触电极

根据光学薄膜原理计算了GaN/Ti/Ag、GaN/Al和GaN/Ni/Au/Ti/Ag、GaN/Ni/Au/Al多层电极结构的反射率,得出Ag基和Al基反射电极均能在全角范围内提供较高的反射率。实验测量结果表明,反射率能高于80%的Ag基反射电极,具有低欧姆接触的电学特性。并将GaN/Ni/Au/Ti/Ag多层反射电极应用在上下电极结构的GaN基LED中。实验上采用两步合金法获得了低接触电阻、高反射率的电极结构,并引入Ni/Au覆盖层克服了Ag高温时的团聚和氧化现象。解决了Ag电极的稳定性问题,显著地提高了LED的出光效率,成功制备了具有上下电极结构的GaN基LED管芯。     

等离子体电极普克尔盒电光开关单脉冲过程数值模拟

采用流体模型对等离子体电极普克尔盒(PEPC)电光开关单脉冲过程进行了数值模拟分析.模型包括带电粒子连续性方程、动量守恒方程、电子平均能量方程及空间电位泊松方程.分别采用隐式指数差分格式，超松弛迭代法(SOR)和经典四阶龙格-库塔法(R-K)对带电粒子连续性方程，泊松方程和电子平均能量方程进行数值求解.模拟分析了PEPC单脉冲过程中的带电粒子浓度、电子温度、空间电场、PEPC的放电电流、晶体两侧电压和开关效率的时间演化特性.模型得出了PEPC中气体放电等离子体的微观物理过程与PEPC宏观参量的关系，对设计 关键词： 等离子体电极普克尔盒 电光开关 数值模拟 气体放电     

渗入Cs的沸石的结构分析

20 0 2年 8月 12日的Ｐｈｙｓ .Ｒｅｖ .Ｌｅｔｔ.第 89卷第 0 75 5 0 2页上发表了Ｐｅｔｋｏｖ等的论文“渗入Ｃｓ的ＩＴＱ - 4沸石 (Ｚｅｏｌｉｔｅ)的结构 :在膺一维空隙中的金属离子列和相关的电子” ,文中发展了Ｘ射线原子对分布函数 (ＰＤＦ)方法 .这种结构可以发展成为应用广泛的新的电极材料 .沸石ＩＴＱ - 4是一种由ＳｉＯ4四面体为骨架的网格状硅酸盐 ,其中的空隙尺寸略小于1ｎｍ ,允许尺寸小于它的分子通过 ,因此它也是一种分子筛 .沸石原来是晶态 ,渗入Ｃｓ后则处于晶态和非晶态之间的中间状态 ,其中的晶态部分产生Ｘ射线布拉格…     

Fabrication and optical properties of platinum nanowire arrays on anodic aluminium oxide templates

Arrays of Pt nanowires, fabricated by electrodepositing Pt metal into nanoporous anodic aluminium oxide (AAO) templates, exhibit a preferable optical absorption band in the ultraviolet-visible (UV-VIS) spectra and present a blueshift as the wire aspect ratio increases or its radius decreases. This type of optical property of Pt nanowire/porous alumina composites has been theoretically explored using Maxwell－Garnett (MG) effective medium theory. The MG theory, however, is only applicable to nanowires with an infinitesimally small radius relative to the wavelength of an incident light. The nanowire radius is controlled by the pore radius of the host alumina, which depends on anodizing conditions such as the selected electrolyte, anodizing time, temperature and voltage. The nanowire aspect ratios depend on the amount of Pt deposited into the nanopores of AAO films. The optical absorption properties of the arrays of Pt nanowires with diameters of 24, 55 and 90 nm have been investigated by the UV-VIS spectra, which show that the extinction maximum (λ_max) shifts to shorter wavelength side as the wire aspect ratio increases or its radius decreases. The results are qualitatively consistent with those calculated based on the MG theory.     

Study on the Baryon State X Produced in the Process J／ψ→p＋X,X→p＋P

The decay process J/ψ→p X X→p P，where p,p and P are the proton,antiproton and pseudoscalar states,respectively,has been studied in terms of the angular distribution and the generalized moment analysis methods.The result shows that we can identify the spin,but cannot determine the parity of the baryon resonance state X produced in the process J/ψ→p X X→p P.     

Exciton—Phonon Scattering in CdSe／ZnSe Quantum Dots

A temperature-dependent photoluminescence measurement is performed in CdSe/ZnSe quantum dots with a ZnCdSe quantum well.We deduce the temperature dependence of the exciton linewidth and peak energy of the zero-dimensional exciton in the quantum dots and two-dimensional exciton in the CdSe wetting layer.The experimental data reveal a reduction of homogeneous broadening of the exciton line in the quantum dots in comparison with that in the two-dimensional wetting layer,which indicates the decrease of exciton and optical phonon coupling in the CdSe quantum dots.     

Anomalous Temperature Dependence of Photoluminescence in GaInNAs／GaAs Multiple Quantum Wells

Photoluminescence (PL) spectra of GaInNAs/GaAs multiple quantum wells grown on a GaAs substrate by molecular beam epitaxy are measured in a range of temperatures and excitation power densities.The energy position of the dominant PL peak shows an anomalous S-shape temperature dependence instead of the Varshni relation.By careful inspection,especially for the PL under lower excitation power density,two near bandedge peaks are well identified.These are assigned to carriers localized in nitrogen-induced bound states and interband excitonic recombinations,respectively.It is suggested that the temperature-induced switch of such two luminescence peaks in relative intensity causes a significant mechanism responsible for the S-shape shift observed in GaInNAs.A quantitative model based on the thermal depopulation of carriers is used to explain the temperature dependence of the PL peak related to N-induced bound states.     

ZnSe及ZnSe/GaAs异质结构中压力导致的直接禁带向间接禁带的转变

用经验赝势方法计算了体ZnSe以及ZnSe/GaAs单异质结系统中ZnSe外延层г、X、L等特殊对称点导带底能量随压力的变化。结果表明，同Si、Ge、GaAs等半导体材料不同，ZnSe的X点导带底具有正的压力系数，但比г点的压力系数小，这是ZnSe材料以及ZnSe基异质结构材料发生直接禁带向间接禁带的转变时所需转变压力较大的根本原因。研究了ZnSe/GaAs异质结构中晶格失配造成的应变对外延层г、X、L对称点压力系数的影响，表明这种晶格失配造成的应变可以极大地减小ZnSe外延层材料由直接禁带向间接禁带的转变压力。