Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

The surface of β-Ga₂O₃ (1 0 0) single crystal grown with floating zone method was treated by chemical-mechanical-polishing (CMP) for 30-120 min followed by annealing in oxygen atmosphere at temperature 600-1100 °C for 3-6 h. The evolution of the step arrangement was investigated with reflection high energy electron diffraction and atomic force microscopy. Atomically smooth surfaces with atomic step and terrace structure of β-Ga₂O₃ substrates were successfully obtained after just CMP treatment as well as CMP treatment and post annealing at 1100 °C for 3 h. The uniform step height was 0.57 nm, and smooth terrace width was 100 nm, where the misorientation angle was about 0.36°. The obtained atomically smooth surface provides a potential application for the high-quality epitaxial film growth.     

Structural studies of evaporated CoxCr1−x/Si (1 0 0) and CoxCr1−x/glass thin films

Series of Co_xCr_1−x thin films have been evaporated under vacuum onto Si (1 0 0) and glass substrates. Chemical composition and interface properties have been studied by modelling Rutherford backscattering spectra (RBS) using SIMNRA programme. Thickness ranges from 17 to 220 nm, and x from 0.80 to 0.88. Simulation of the energy spectra shows an interdiffusion profile in the thickest films, but no diffusion is seen in thinner ones. Microscopic characterizations of the films are done with X-ray diffraction (XRD) measurements. All the samples are polycrystalline, with an hcp structure and show a 〈0 0 0 1〉 preferred orientation. Atomic force microscopies (AFM) reveal very smooth film surfaces.     

An extreme change in structural and optical properties of indium oxynitride deposited by reactive gas-timing RF magnetron sputtering

The indium oxynitride (InON) films were achieved by reactive RF magnetron sputtering indium target which has the purity of 99.999% with a novel reactive gas-timing technique. The structural, optical and electrical properties in a series of polycrystalline InON films affected by gas-timing of reactive N₂ and O₂ gases introduced to the chamber were observed. The X-ray photoelectron spectroscopy revealed that the oxygen content in thin films that compounded to indium and nitrogen, which increased from 10% in indium nitride (InN) to 66% in indium oxide (In₂O₃) films. The X-ray diffraction peaks show that the phase of deposited films changes from InN to InON and to In₂O₃ with an increasing oxygen timing. The hexagonal structure of InN films with predominant (0 0 2) and (0 0 4) orientation was observed when pure nitrogen is only used as sputtering gas, while InON and In₂O₃ seem to demonstrate body-center cubic polycrystalline structures depending on gas-timing. The surface morphologies investigated from atomic force microscope of deposited films with varying gas-timing of O₂:N₂ show indifferent. The numerical algorithm method was used to define the optical bandgap of films from transmittance results. The increasing oxygen gas-timing affects extremely to the change of crystallinity phase from InN to InON and to In₂O₃, the increase of optical bandgap from 1.4 to 3.4 eV and the rise of sheet resistance from 15 Ω/□ to insulator.     

Effect of gas residence time on the morphology of silicon surface etched in SF6 plasmas

This paper describes the effect of the SF₆ gas residence time on the morphology of silicon (1 0 0) samples etched in a reactive ion etching system. Profilometry and atomic force microscopy techniques were used to characterize the etching process focusing attention on the evolution of the surface morphology. Under the condition of variable pressure and gas flow rate, the decrease of the residence time leads to an increase of the silicon etch rate concomitantly with an increase of the surface roughness. Contrary fact is observed when the gas flow is fixed and the pressure is varied. Here, the increasing of residence time leads to a constant increase of silicon etch rate with small variations in final surface roughness. To better understanding this resident time effect, mass spectrometry analyses were realized during the discharge for both gas flow conditions.     

Dissociation of water molecule at three-fold oxygen coordinated V site on the InVO4 (0 0 1) surface

Water molecule adsorption properties at the surface of InVO₄ have been investigated using an ab initio molecular dynamics approach. It was found that the water molecules were adsorbed dissociatively to the three-fold oxygen coordinated V sites on the (0 0 1) surface. The dissociative adsorption energy was estimated to be 0.8-0.9 eV per molecule. The equilibrium distance between V and O of the hydroxyl -OH was almost the same as the V-O distance of tetrahedra VO₄ in the InVO₄ bulk crystal (1.7-1.8 Å).     

AFM Study on the Formation Mechanism and Microstructure of Ni Atomic Aggregates on Liquid Substrates

We study the formation mechanism and microstructure of nickel （Ni） atomic aggregates on the silicone oil surfaces by atomic force microscopy （AFM）. Initially, the deposited atoms nucleate and form the compact clusters on the liquid surfaces. Then they perform Brownian motion and adhere upon impact. Finally the branched aggregates are formed. The Ni aggregates exhibit granular structure. The mean size of the granularities in the aggregates is of the order of 10 nm and it decreases with the nominal film thickness. The experiment shows that the Ni aggregates perform a directional diffusion towards the sample edge. The interpretation for this phenomenon is presented.     

The influence of vaporization upon the roots of a high current arc. II

The root of an argon are was stabilized by strong cooling of the graphite cathode; both the composition and the temperature of the plasma at the arc root were determined spectroscopically. The measurements of the absolute intensities of two CI and two CII lines revealed that the plasma is composed almost entirely of atomic carbon. Immediately in front of the cathode a temperature of 12000 K was measured and the degree to which the gas was ionized was found to be 30%. The velocity of the plasma was 300 m/s. This work is based upon material presented in the final report “Basic research programme for plasma technology, high-pressure arcs in SF₆” to the Federal Department of Research and Technology, Fed. Rep. Germany.     

Laser cooling of molecules via single spontaneous emission

A general scheme for reducing the center-of-mass entropy is proposed. It is based on the repetition of a cycle, composed of three concepts: velocity selection, deceleration and irreversible accumulation. Well-known laser techniques are used to represent these concepts: Raman π-pulse for velocity selection, STIRAP for deceleration, and a single spontaneous emission for irreversible accumulation. No closed pumping cycle nor repeated spontaneous emissions are required, so the scheme is applicable to cool a molecular gas. The quantum dynamics are analytically modelled using the density matrix. It is shown that during the coherent processes the gas is translationally cooled. The internal states serve as an entropy sink, in addition to spontaneous emission. This scheme provides new possibilities to translationally laser-cool molecules for high precision molecular spectroscopy and interferometry. Received 25 June 2002 / Received in final form 28 September 2002 Published online 12 November 2002 RID="a" ID="a"e-mail: ooi@spock.physik.uni-konstanz.de RID="b" ID="b"e-mail: Peter.Marzlin@uni-konstanz.de RID="c" ID="c"e-mail: Juergen.Audretsch@uni-konstanz.de     

Novel post‐process for the passivation of a CMOS biosensor

Sensors, which are designed and fabricated in complementary metal oxide semiconductor (CMOS) technology, have become increasingly important in the field of bioelectronics. The standardized industry processes enable a fast, cheap, and reliable fabrication of biosensor devices with integrated addressing and processing units. However, the interfacing of such chips with a liquid environment has been a challenge in recent years. Especially for interfacing living cells with CMOS biosensors different elaborate post‐processes have been proposed. In this article we describe a novel and single step passivation of a CMOS biosensor using a bio‐compatible high‐permittivity thin film, which can be directly applied to the top aluminium layer of a CMOS process. The aluminium oxide and hafnium oxide multi‐layer thin films were prepared using atomic layer deposition at low process temperatures. Electrical I –V and capacitance measurements as well as electrochemical leakage current measurements were performed on films grown on aluminium bottom electrodes. The films showed a very low leakage current and were stable up to 6 V at a thickness of just 50 nm. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Controlled local filament growth and dissolution in Ag–Ge–Se

Memory cells based on the cation migration and filament formation and rupture in a solid electrolyte have attracted much interest due to low switching voltages and a prospective high scalability. In this study we indirectly visualized the growth and dissolution of the conductive filament in Ag–Ge–Se samples with Ag bottom electrodes by surface analysis with Conductive Atomic Force Microscopy (CAFM). By application of a negative voltage to the inert CAFM tip, conductive filaments were grown on the scanned area and they were dissolved under reversed bias. The local conductivity changes directly corresponded to changes in the topography, i.e. to the filament protrusion and dissolution. Topography changes could be circumvented by limiting the maximum current. By placing the CAFM tip on a random spot on the sample, filaments with a diameter as low as 20 nm were grown by local current–voltage measurements. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)