Small Data Scattering for the One-Dimensional Nonlinear Dirac Equation with Power Nonlinearity

We study scattering problems for the one-dimensional nonlinear Dirac equation (?_t + α?_x + iβ)Φ = λ|Φ|^p?1Φ. We prove that if p > 3 (resp. p > 3 + 1/6), then the wave operator (resp. the scattering operator) is well-defined on some 0-neighborhood of a weighted Sobolev space. In order to prove these results, we use linear operators D(t)xD(?t) and t?_x + x?_t ? α/2, where {D(t)}_t∈? is the free Dirac evolution group. For the reader's convenience, in an appendix we list and prove fundamental properties of D(t)xD(?t) and t?_x + x?_t ? α/2.     

QoS enhancement in OFDM based systems under transceiver impairments

Broadband wireless systems generally use orthogonal frequency division multiplexing (OFDM) with link adaptation (LA) to achieve high throughput while meeting bit error rate (BER) constraint. OFDM systems are known to be affected by non-linearity of high power amplifier (HPA) at transmitter, carrier frequency offset (CFO), symbol timing offset (STO) and channel estimation error at the receiver. The delay in feedback of channel state information (CSI) further affects the performance of LA procedures. The focus of this work is on performance analysis in presence of simultaneous affect of all these impairments on LA based OFDM systems. The results are found to be useful for threshold readjustment which is essential for successful implementation of LA scheme to counter the effects of change in operating conditions from ideal to as listed above.     

Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor

We propose a distinct approach to implement a laterally single diffused metal-oxide-semiconductor (LSMOS) FET with only one impurity doped p-n junction. In the LSMOS, a single p-n junction is first created using lateral dopant diffusion. The channel is formed in the p region of the p-n junction and the n region acts as the drift region. Two distinct metals of different work function are used to form the “n⁺” source/drain regions and “p⁺” body contact using the charge plasma concept. We demonstrate that the LSMOS is similar in performance to a laterally double diffused metal-oxide-semiconductor (LDMOS) although it has only one impurity doped p-n junction. The LSMOS exhibits a breakdown voltage of ∼50.0 V, an average ON-resistance of 48.7 mΩ-mm² and a peak transconductance of 53.6 μS/μm similar to that of a comparable LDMOS.     

用CdSe/ZnS量子点提高体异质结有机太阳电池的效率

通过掺杂吸收光谱在可见光波段的量子点可提高聚合物对可见光的吸收,因此掺杂CdSe/ZnS核-壳结构量子点(CQDs)能提高聚(3-己基噻吩):[6,6]-苯基-C61-丁酸甲酯(P3HT:PCBM)体异质结太阳电池的能量转换效率.本文研究了CdSe/ZnS量子点在P3HT:PCBM中的不同掺杂比例及其表面配体对太阳电池光伏性能的影响,优化器件ITO(氧化铟锡)/PEDOT:PSS(聚(3,4-乙撑二氧噻吩:聚苯乙烯磺酸)/P3HT:PCBM:(CdSe/ZnS)/Al的能量转换效率达到了3.99%,与相同条件下没有掺杂量子点的参考器件ITO/PEDOT:PSS/P3HT:PCBM/Al相比,其能量转换效率提高了45.1%.     

价值引领融入“无机化学与化学分析”的课程思政建设

将课程思政应用到"无机化学和化学分析"教学中,更好发挥其价值引领作用。开展课程思政建设,应做到守正与创新。本文以价值引领为切入点,介绍如何将思想政治教育有机融入课程内容设置和课堂讲授等环节,力求培养学生的家国情怀、国际视野、法治意识、生态意识、工程伦理、人文关怀等科学素养,深入践行立德树人,提高本科教学质量。     

选择性合成不同形貌的Sb2S3纳米结构应用于高性能的染料敏化太阳能电池（英文）

近几十年来,随着全球变暖和能源危机的日益严重,对取之不尽、用之不竭的清洁能源技术的需求越来越迫切.1991年Gratzel首次报道了染料敏化太阳能电池(DSSCs),它以低廉的价格、优异的理论功率转换效率(PCE)、环保、多色透明等优点而引起了研究者的关注.Sb2S3因其1.5-2.2 eV的间隙宽度被认为是最有前途的对电极材料之一.此外,Sb2S3是地球中含量丰富的无毒锑矿物的主要成分,还被广泛应用于太阳能转换材料、催化剂、光导探测器等领域.众所周知,石墨烯具有巨大的比表面积、显著的载流子迁移率和优异的热/化学稳定性,这使得提高电子转移效率和电催化活性成为可能.首先,采用改进的Hummers方法制备了氧化石墨烯纳米片;然后采用水热法通过改变Sb源以及实验pH值,合成了Sb2S3和Sb2S3@RGO样品.对样品进行X射线粉末衍射(XRD)、扫描电子显微镜镜(SEM)、投射电子显微镜(TEM)以及比表面积表征.结果表明,在Sb源不变的情况下,Sb2S3样品的形貌随pH值的变化而变化.以三乙酸锑为Sb源,在pH=3时,Sb2S3的形貌类似于一个完整的纳米棒结构;在pH值为6时,样品为不规则球体;当pH值为8时,纳米片结构开始出现;但当p H=10时,纳米片结构并不均匀.根据XRD分析,只有当pH值为3时,样品的衍射峰才与标准卡(JCPDS42-1393)的衍射峰一致.当以氯化锑作为锑源,样品的形貌由不规则的杆状(pH=3)转变为纳米球(pH=6),然后出现纳米片结构(pH=8).不同的是,当p H值为10时,纳米薄片形成均一的花状结构.XRD结果表明,除pH值为3外,样品的衍射峰与标准卡(JCPDS42-1393)的值吻合较好.结果表明,合成条件所需的Sb源和碱性环境是合成具有均匀花状结构的纳米片状Sb2S3所必不可少的.测得Sb2S3的比表面积约为41.72 m^2g^-1,平均孔径为31.08nm,Sb2S3@RGO的分别为44.53 m^2g^-1和22.65 nm.Sb2S3和Sb2S3@RGO复合材料均具有介孔结构,为内部电催化剂提供了广阔的通道,从而提高了对电极的催化能力,促进了电化学反应.将Sb2S3纳米花球和Sb2S3@RGO纳米薄片作为染料敏化太阳能电池的对电极进行了测试,由于石墨烯的引入,后者比前者具有更好的电催化性能.电化学实验结果表明,与Sb2S3,RGO,Pt作为对电极相比,制备的Sb2S3@RGO纳米薄片具有更好的催化活性、电荷转移能力和电化学稳定性,Sb2S3@RGO的功率转换效率达到8.17%,优于标准Pt对电极(7.75%).     

Research progress on transition metal oxide based electrode materials for asymmetric hybrid capacitors

In the past few years, the increasing energy consumption of traditional fossil fuels has posed a huge threat to human health. It is very imperious to develop the sustainable and renewable energy storage and conversion devices with low cost and environment friendly features. Hybrid supercapacitors are emerging as one of the promising energy devices with high power density, fast charge-discharge process and excellent cycle stability. However, morphology and structure of the electrode materials exert serious effect on their electrochemical performances. In this review, we summarized recent progresses in transition metal oxide based electrode materials for supercapacitors. Different synthesis routes and electrochemical performances of electrode materials and storage mechanisms of supercapacitor devices have been presented in details. The future developing trends of supercapacitor based on metal oxide electrode materials are also proposed.     

红外光谱法直接鉴别苦丁茶的研究

本文利用傅立叶变换红外光谱(FTIR)法快速、直接地测定了11种苦丁茶,并对所获得的指纹图谱进行特征峰指认和对比分析。结果表明:各种苦丁茶化学成分相同,而由于各成分间的相对含量的不同,使每种样品都有自己独特的红外谱图,不同产地、不同级别苦丁茶的红外吸收频率、吸收峰的相对强度都存在比较大的差异。同时还运用傅立叶变换红外光谱技术对不同产地、不同级别苦丁茶的混合化学体系进行了全组分快速分析,为苦丁茶的鉴别及质量控制提供了可靠的依据。     

用于WDM光网络的一种低串扰无损耗光开关矩阵

提出了一种低串扰无损耗的光开关矩阵.该结构是在扩展Benes（DB）结构的基础上通过改进得到的称为改进的扩展Benes（IDB）结构,并通过进一步的改进得到各级改进的扩展Benes（GIDB）结构.理论分析了IDB结构和GIDB结构中串扰产生的机理和对信号的影响,比较了几种结构的信噪比和光交换容量之间的关系.发现随着光交换规模的扩大,GIDB结构相对于DB结构信噪比明显提高.实验研究了4×4的IDB、GIDB结构中串扰引起的误码率降低以及眼图的恶化情况.结果表明GIDB结构能有效减少串扰的影响.     

超导故障限流器的研究现状及其应用

超导故障限流器(Superconducting Fault Current Limiter,SFCL)是利用超导体的基本特性,有效限制电力系统故障短路电流,提高电网安全性和稳定性的一种新型电力设备。文中在综合大量文献的基础上,对超导故障限流器进行了一种较为系统的分类。基于该种分类,结合目前国内外的研究现状,就电阻型、磁屏蔽型、饱和铁芯电抗器型、桥路型SFCL的工作原理作了详细的分析介绍,还给出了它们在电力系统中的安装位置。最后,对超导故障限流器的研究中存在的问题及其发展趋势做了说明。