Influence of buffer layer thickness on the structure and optical properties of ZnO thin films

A series of ZnO thin films were deposited on ZnO buffer layers by DC reactive magnetron sputtering. The buffer layer thickness determination of microstructure and optical properties of ZnO films was investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. XRD results revealed that the stress of ZnO thin films varied with the buffer layer thickness. With the increase of buffer layer thickness, the band gap edge shifted toward longer wavelength. The near-band-edge (NBE) emission intensity of ZnO films deposited on ZnO buffer layer also varied with the increase of thickness due to the spatial confinement increasing the Coulomb interaction between electrons and holes. The PL measurement showed that the optimum thickness of the ZnO buffer layer was around 12 nm.     

Influence of oxidation time on semiconductive behaviour of thermally grown oxide films on AISI 304L

The oxide films formed on AISI 304L stainless steel at 300 °C in the oxidation time range between 2 and 4 h have been studied by photoelectrochemistry. Photocurrents were investigated as a function of the wavelength of the incident light and the electrode potential. The investigation allowed the determination of the semiconductive properties of the oxides. The oxide films showed n-type behaviour. A duplex structure of the oxide films has been suggested on the basis of the photocurrent spectra, with an internal oxide layer having an optical gap (E_g2 = 2.16-2.3 eV) depending on the applied potential and oxidation time, higher to that of the external oxide layer (E_g1 ≈ 1.9 eV). Significant variations in the amplitude of the photocurrent were detected as a function of the applied potential and the oxidation time.     

Monte Carlo study of interfacial silicon suboxide layers and oxidation kinetics

A simple simulation scheme that simultaneously describes the growth kinetics of SiO₂ films at the nanometer scale and the SiO_x/Si interface dynamics (its extent, and spatial/temporal evolution) is presented. The simulation successfully applies to experimental data in the region above and below 10 nm, reproduces the Deal and Grove linear-parabolic law and the oxide growth rate enhancement in the very thin film regime (the so-called anomalous region). According to the simulation, the oxidation is governed mainly by two processes: (a) the formation of a transition suboxide layer and (b) its subsequent drift towards the silicon bulk. We found that it is the superposition of these two processes that produces the crossover from the anomalous oxidation region behavior to the linear-parabolic law.     

高碘酸钾催化光度法测定痕量铑

在磷酸和热水浴中 ,Rh( )催化高碘酸钾氧化二甲基黄褪色 ,由此建立了测定铑的新催化光度法。本方法的线性范围为 0— 4 .0 μg/ 2 5 m L,检出限为 4 .71× 10 -10 g/ m L。对 2 .0 μg/ 2 5 m L Rh( )测定的相对标准偏差为 1.4 3% (n=11) ,催化反应的表观活化能为 12 5 .8k J/ mol。此法已用于某些催化剂和冶金产品中痕量铑的测定 ,结果令人满意。     

催化动力学光度法测定痕量钴(Ⅱ)

本法基于钴 (Ⅱ )对高碘酸钾氧化孔雀绿的催化作用 ,提出一种灵敏地测定痕量钴 (Ⅱ )的新方法。该方法线性范围在 0～ 0 8μg·2 5mL- 1 ,检测限为 2 1× 10 - 1 0 g·mL- 1 。测定出反应表现活化能Ea=37 94kJ·mol- 1 。此法用于茶叶、维生素B1 2 中钴的测定 ,结果满意     

用发射光谱分析法检测地膜中金属杂质含量

本文描述农用薄膜中Ａｌ、Ｆｅ、Ｍｇ、Ｃａ、Ｓｉ、Ｃｕ、Ｔｉ杂质元素的发射光谱分析法，该方法直接压样于石墨电极中，简便，快速，取得了满意的结果。     

钾分子中里德堡态的紫外辐射研究

本文报道了在K-K₂系统中,利用双光子共振激发钾原子8s、6d态,观察到了K₂在(310～365nm)里德堡态的紫外辐射.钾分子里德堡态的布居,受到了多种激发过程影响.文中对其发射和激发过程进行了详细讨论.     

正丙醇-水体系中SbI4-与U（Ⅶ）、Ce3+、Co2+和Ag+的析相萃取分离

研究了正丙醇-水体系析相萃取分离和富集SbI4-的行为及其与一些金属离子分离的条件。实验表明,控制pH为2,能使SbI4-与U()、Ce3+、Co2+和Ag+分离。     

孔雀石绿-溴酸钾催化分光光度法测量亚硝酸根

采用流动注射技术和催化分光光度法相结合,研究了在磷酸介质中,亚硝酸根对溴酸钾氧化孔雀石绿褪色反应的催化作用及其动力学条件,建立了催化动力学光度法测定痕量亚硝酸根的新方法。方法检出限为0.9ng/mL,测定的线性范围为5—60ng/mL,且线性相关系数为0.9983,对于浓度为30ng/mL的亚硝酸根标准液测定的相对标准偏差仅为1.0。该方法适用范围广,具有较好的准确性、稳定性和灵敏度,且实验操作方便、快速。利用此方法测定不同水样中的亚硝酸根,加标回收率在88.6%—104.8%之间,分析结果令人满意。