Mesoporous titania films investigated by positron annihilation based on a slow positron beam

Tunable mesoporous titania (TiO₂) thin films were synthesized via a sol-gel method using an amphiphilic triblock copolymer F38 as the structural template. The dependence of crystalization, pore morphology and interconnectivity of TiO₂ films on the weight ratio of F38 was studied by wide-angle X-ray diffraction, field emission scanning electron microscopy and Doppler broadening of positron annihilation radiation spectroscopy based on a slow positron beam. By loading more F38, the crystallization of TiO₂ films is enhanced, accompanied by a decrement in oxygen vacancies/grain boundaries. Smaller and isolated mesopores are formed in the films prepared with F38 less than 15?wt%. The pore percolation occurs when the weight ratio of F38 is up to 20?wt% and larger and interconnected worm-like pores are formed.     

Effect of KOH molarity and annealing temperature on ZnO nanostructure properties

In this work, ZnO nanorods (NRs) were fabricated using a low cost chemical bath deposition (CBD) method. The effect of the potassium hydroxide concentration on the fabricated ZnO nanostructures was studied in depth. The optical, structure, and surface morphology properties of the fabricated ZnO nanostructures were investigated using Uv-vis spectroscopy, XRD, and SEM. The results indicate that the formation of hexagonally structured ZnO nanorods with different lengths and diameters was dependent on the KOH concentration. The sample prepared with 2 M of KOH was the best one for optoelectronic applications, since it has the smallest diameters. This sample was annealed at different temperatures (473 K–1073 K). Positron Annihilation Lifetime Spectroscopy was used to determine the defects in the ZnO nanorods. The results show that the positron mean lifetime (τ_m) decreased as the annealing temperature increased, which means that the overall defects in the ZnO nanorods decreased with increasing temperature. Consequently, higher performance semiconductor devices based on ZnO nanorods could be fabricated after high annealing of the ZnO nanorods.     

Dynamic Thermal Emission Control Based on Ultrathin Plasmonic Metamaterials Including Phase‐Changing Material GST

Dynamic thermal emission control has attracted growing interest in a broad range of fields, including radiative cooling, thermophotovoltaics and adaptive camouflage. Previous demonstrations of dynamic thermal emission control present disadvantages of either large thickness or requiring sustained electrical or thermal excitations. In this paper, an ultrathin (∼0.023λ, λ is the emission peak wavelength) metal‐insulator‐metal plasmonic metamaterial‐based zero‐static‐power mid‐infrared thermal emitter incorporating phase‐changing material GST is experimentally demonstrated to dynamically control the thermal emission. The electromagnetic modes can be continuously tuned through the intermediate phases determined by controlling the temperature. A typical resonance mode, which involves the coupling between the high‐order magnetic resonance and anti‐reflection resonance, shifts from 6.51 to 9.33 μm while GST is tuned from amorphous to crystalline phase. This demonstration will pave the way towards the dynamical thermal emission control in both the fundamental science field and a number of energy‐harvesting applications.     

高效氟代联蒽类深蓝光材料的合成及OLED性能

为了开发新型多功能的蓝光电致发光材料与器件,设计并合成了一系列氟取代联蒽类材料(BAnFs),通过改变吸电子基团的取代模式,进而调节其光物理性能、热稳定性和能级.以CBP为主体、BAnFs为掺杂的器件表现出高效的深蓝光发光性能,对应的色坐标为CIE (0.15, 0.08),特别是对BAn-(3,5)-CF3器件的电流效率为3.05 cd/A,最大外量子效率(EQE)高达5.02;.同时BAnFs材料可作为高性能的蓝光主体材料,其EQE为3.56;~5.43;.因此,BAnFs可作为新型高性能的多功能蓝光发光材料.     

基于苯并噻唑的新型双硼桥联梯形共轭骨架的合成、结构及其性质

设计合成了一个新型双硼桥联梯形分子.该有机分子拥有一个拓展的π共轭骨架结构.通过真空升华方法,得到了这个化合物的单晶.单晶X射线衍射分析表明该化合物拥有一个完全共平面的并七环梯形骨架.与每一个硼配位的米基基团可以有效地隔离发光单元,避免聚集诱导淬灭.化合物具有非常高的熔点和热分解温度,表明其拥有良好的热稳定性.电化学、光物理性质和理论计算研究表明,我们设计的双硼梯形共轭化合物在有机电子发光二级管器件中具有潜在的应用价值.因此,构筑了以该分子为发光层和电子传输层的器件,得到了不错的电致发光效果.     

21.2%‐efficient fineline‐printed PERC solar cell with 5 busbar front grid

We evaluate industrial‐type PERC solar cells applying a 5 busbar front grid and fineline‐printed Ag fingers. We obtain finger widths down to 46 µm when using a stencil with 40 µm opening for the finger print, whereas the busbar is printed in a separate printing step with a different Ag paste (dual print). This compares to finger widths of 62 µm to 66 µm when applying print‐on‐print. The 5 busbar front grid with the best dual print process reduces the shadowing loss of the front grid to 4.0% compared to 5.8% for a conventional 3 busbar front grid printed with print‐on‐print. The 1.8% reduction in shadowing loss results in equal parts from the reduced finger width with dual print as well as from a reduced total busbar width of the 5 busbar design. The resulting PERC solar cells with 5 busbars demonstrate independently confirmed conversion efficiencies of 21.2% compared to 20.6% efficiency of the 3 busbar PERC solar cell. The increased conversion efficiency is primarily due to an increased short‐circuit current resulting from the reduced shadowing loss. To our knowledge, 21.2% conversion efficiency is the highest value reported so far for industry typical silicon solar cells with printed metal front and rear contacts. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Positron annihilation probing of crystallization effects in TAS-235 glass affected by Ga additions

Crystallization effects in Te₂₀As₃₀Se₅₀ glass known also as TAS-235 affected by Ga additions to Ga₂Te₂₀As₂₈Se₅₀ and Ga₅Te₂₀As₂₅Se₅₀ compositions are probed with positron annihilation spectroscopy in the measuring modes exploring positron lifetimes and Doppler broadening of annihilation line. Occurring of cubic-phase Ga₂Se₃ droplets with character nanoscale sizes in partially-crystallized Ga₂Te₂₀As₂₈Se₅₀ alloy is shown to be associated with agglomeration of intrinsic free-volume voids, this process being enhanced over microcrystalline scale in Ga₅Te₂₀As₂₅Se₅₀ alloy. Crystallization changes in the void structure of TAS-235 glass are considered in terms of free-volume evolution under the same principal chemical environment responsible for positron trapping in amorphous and partially crystallized substances.     

沟槽型发射极SiGe异质结双极化晶体管新结构研究

提出了一种沟槽型发射极SiGe异质结双极化晶体管新结构. 详细分析了新结构中沟槽型发射极的引入对器件性能的影响,并对其机理进行研究. 新型发射极结构通过改变发射极电流路径使电阻分区并联,在不增大结电容的前提下,有效减小发射极电阻,提高器件的频率特性. 结果表明,新结构器件的截止频率和最大振荡频率分别增加至100.2 GHz和134.4 GHz,更重要的是沟槽型发射极结构的引入,在提高器件频率特性的同时,不会降低器件的电流增益,也不会增加结电容,很好实现了频率特性、电流增益和结电容之间的折中. 对沟槽型发射极进行优化设计,改变侧墙高度和侧墙宽度. 沟槽型发射极电阻不受侧墙高度改变的影响,频率性能不变;侧墙宽度增加,频率性能降低. 关键词： SiGe 异质结双极化晶体管 沟槽型发射极 发射极电阻     

Soluble and Green‐light‐emitting Oligo(9‐fluorenylideneacetic acid): Electrosynthesis and Characterization

A novel semiconducting oligo(9‐fluorenylideneacetic acid) (OFYA) with good redox activity and stability was successfully electrosynthesized by direct anodic oxidation of 9‐fluorenylideneacetic acid (FYA) in CH₂Cl₂ containing boron trifluoride diethyl etherate (BFEE) as the supporting electrolyte. The as‐formed OFYA film was readily soluble in dimethyl sulfoxide and tetrahydrofuran, and partly soluble in water, alcohol, acetonitrile and acetone. FT‐IR and ¹H NMR spectra, together with computational results proved that FYA was probably polymerized through the coupling at C(2) and C(7) positions. Further, OFYA was a typical green light‐emitter with maximal emission at 555 nm and its fluorescence quantum yield was distinctly improved in comparison with that of the monomer. The oligomer was also studied by UV‐vis spectroscopy, MALDL‐TOF mass spectrometry, and thermal analysis, respectively.     

Thermal stability of grain boundaries in nanocrystalline Zn studied by positron lifetime spectroscopy

Nanocrystalline Zn prepared by compacting nanoparticles with mean grain size about 55 nm at 15 MPa has been studied by positron lifetime spectroscopy. For the bulk Zn sample, the vacancy defect is annealed out at about 350 °C, but for the nanocrystalline Zn sample, the vacancy cluster in grain boundaries is quite difficult to be annealed out even at very high temperature (410 °C). In the grain boundaries of nanocrystalline Zn, the small free volume defect (not larger than divacancy) is dominant according to the high relative intensity for the short positron lifetime (τ₁). The oxide (ZnO) inside the grain boundaries has been found having an effect to hinder the decrease of average positron lifetime (τ_av), which probably indicates that the oxide stabilizes the microstructure of the grain boundaries. This stabilization is very important for the nanocrystalline materials using as radiation resistant materials.