Use of CF3,Br/Al,discharges for reactive ion etching of III-V semiconductors

The reactive ion etching of GaAs, InP, InGaAs, and InAlAs in CF₃Br/Ar discharges was investigated as a function of both plasma power density (0.56-1.3 W - cm^–2) and total pressure (10-40 mTorr) The etch rate of GaAs in 19CF₃Br:1Ar discharges at 10 m Torr increases linearly with power density, from 600 Å min^–1 at 0.56 W · cm^–2, to 1550 Å · min at 1.3 W · cm^–2. The in-based materials show linear increases in etch rates only for power densities above – 1.0 W · cm^–2. These etch rates are comparable to those obtained with CCI₂F₂:O₂ mixtures under the same conditions. Smooth surface morphologies and vertical sidewalls are obtained over a wide range of plasma parameters. Reductions in the near-surface carrier concentration in n-type GaAs are evident for etching with power densities of >0.8 W cm^–2, due to the introduction of deep level trapping centers. At 1.3 W· cm^–2, the Schottky barrier height of TiPtAu contacts on GaAs is reduced from 0.74 to 0.53 eV as a result of this damage, and the photoluminescent intensity from the material is degraded. Alter RIE, we detect the presence of both F and Br on the surface of all of the semiconductors. This contamination is worse than with CCl₂F₂-based mixtures. High-power etching with CF₃Br/Ar together with Al-containing electrodes can lead to the presence of a substantial layer of aluminum oxide on the samples if the moisture content in the reactor is appreciable.     

Reachable and controllable sets for two-dimensional,linear, discrete-time systems

We consider two-dimensional discrete-time linear systems with constrained controls. We propose a simple polynomial time procedure to give an exact external representation of theN-step reachable set and controllable set. The bounding hyperplanes are explicitly derived in terms of the data of the problem. By using a result in computational geometry, all the calculations are made in polynomial time in contrast to classical methods. The limit case asN is also investigated.     

Large-area microwave and radiofrequency plasma etching of polymers

We have investigated O₂/CF₄ plasma etching of five commercial polymers: polyimide, polyamide, polyethylene terephthalate, polycarbonate and cured epoxy resin. A new large-area microwave plasma apparatus has been used in this work, but the same apparatus can also be used as a capacitively coupled radiofrequency (13.56 MHz) discharge reactor. The effect of operating parameters such as pressure, etchant gas composition, excitation frequency and sample temperature upon etch kinetics has been examined. We have observed distinct maxima in the etch rate as functions of pressure and CF₄ concentration. Activation, energies evaluated from the Arrhenius plots fall in the range 0.04-0.2 eV, in agreement with data in the literature. Dry etch susceptibility of a given polymer correlates strongly with the degree of unsaturation in the polymer's structure     

丙醛的等离子体聚合以及聚合物的结构与性质初探

应用外部电容耦合式等离子体聚合方法,制得了丙醛聚合物,研究了不同的等离子体条件对丙醛的聚合行为的影响。通过元素分析、红外光谱分析、色谱-质谱联合分析、X-射线衍射、润湿性测定等手段研完发现,聚合物为无定形交联结构,表面能为41—45达因/厘米。     

Anode Magnetron Enhanced DC Glow Discharge Processes for Plasma Surface Cleaning and Polymerization

The objective of this study was to examine some fundamental factors involved in the design and construction of the anode magnetron dc glow discharge processes as well as its performance in plasma cleaning and polymerization. Those advantages of anode magnetron include the capability of the magnetron to operate at low pressure, as well as decreasing the thickness of cathode dark space, i.e., the negative glow which contains a higher concentration of ions and active species was more closely to the cathode surface, which makes the plasma surface cleaning and polymerization an effective and uniform processes. The deposition rate at a given discharge power is increased by the presence of anode magnetrons, and is also much higher relative to rf and af. The refractive index of dc plasma film at a given polymer thickness (such as TMS, 70 nm, RI: 2.4) is higher than rf, af, and cascade arc plasma (RI: 1.6–1.7).     

Synthesis,characterization, and application of griseofulvin surface molecularly imprinted polymers as the selective solid phase extraction sorbent in rat plasma samples

In present study, an investigation was carried out to develop and validate an analytical method for the selective extraction and determination of griseofulvin (GSF) from plasma samples. For this purpose, a rational approach was made to synthesize and characterize the surface molecularly imprinted polymers (SMIPs). The SMIPs were utilized as solid phase extraction (SPE) sorbents. The SMIPs were prepared by using GSF as template molecule on the surface of modified silica particles through a non-covalent technique. The particles demonstrated high adsorption capacity (119.1 µg/mL), fast adsorption equilibrium time (30 min) and good recognition selectivity for the template drug. The scanning electron microscopy and infrared spectroscopy were used to explain the structural and morphological characteristics of the SMIPs and surface non-imprinted polymers. The SPE method was combined with HPLC for plasma analysis. The method validation results demonstrated that the established method possessed good linearity for GSF ranging from 0.1 to 50 µg/mL (R² = 0.997). The limit of detection for this method was 0.02 µg/mL for rat plasma samples. The recoveries of GSF from spiked plasma samples were (90.7–97.7%) and relative standard deviations were (0.9–4.5%). Moreover, the SMIPs as selective SPE sorbent can be reused more than 8 times which is a clear advantage over commercial SPE sorbents. Finally, the usefulness of the proposed strategy was assessed by extraction and detection of GSF in real rat plasma samples.     

靶场光测多站图像多目标判读技术

靶场光测图像处理的一个突出难题是如何分辨图像上出现的大量小目标。利用单站序列图像上目标的运动关联、目标在多站图像上像点之间的对极几何约束关系,提出了靶场多站图像多目标判读的新技术,采用单站序列图像目标卡尔曼运动轨迹预测及跟踪识别技术,以及多站图像对极几何约束同名目标匹配技术,突破了传统方法仅进行单站图像判读的局限。仿真结果证明其能有效解决多站、多目标的判读问题,已成功应用于我们研制的多套靶场图像判读系统中。     

超疏水聚合物表面的水滴蒸发模拟

基于质量守恒和Fick第一定律，模拟了水滴在超疏水聚合物表面的蒸发全过程．研究从以往的接触角<90±扩展到>150±，液滴形貌扩展为椭球球帽模型进行疏水表面蒸发模拟．水滴在超疏水PC和FPU/PMMA表面蒸发的实验结果显示，计算的椭球球帽模型可以更好的反映出液滴接触角和高度的变化情况，并且不同聚合物表面接触角的相同变化趋势也揭示出微-纳二级结构表面结构不仅影响液滴接触角，也影响液滴蒸发模式．     

基于最小二乘支持向量机回归的背景偏振光谱二向反射分布建模分析

详细分析了土壤背景偏振光谱二向反射分布函数与探测角及探测方位角之间关系.提出了基于最小二乘支持向量机回归的偏振光谱二向反射分布函数建模,将有限实验观测条件下测量得到的少数偏振光谱二向反射分布函数扩展到2π空间范围内任意入射及观测条件.通过模型结果和实验结果分析比较,表明该模型能很好地满足准确度要求.