Use of CF3,Br/Al,discharges for reactive ion etching of III-V semiconductors

The reactive ion etching of GaAs, InP, InGaAs, and InAlAs in CF₃Br/Ar discharges was investigated as a function of both plasma power density (0.56-1.3 W - cm^–2) and total pressure (10-40 mTorr) The etch rate of GaAs in 19CF₃Br:1Ar discharges at 10 m Torr increases linearly with power density, from 600 Å min^–1 at 0.56 W · cm^–2, to 1550 Å · min at 1.3 W · cm^–2. The in-based materials show linear increases in etch rates only for power densities above – 1.0 W · cm^–2. These etch rates are comparable to those obtained with CCI₂F₂:O₂ mixtures under the same conditions. Smooth surface morphologies and vertical sidewalls are obtained over a wide range of plasma parameters. Reductions in the near-surface carrier concentration in n-type GaAs are evident for etching with power densities of >0.8 W cm^–2, due to the introduction of deep level trapping centers. At 1.3 W· cm^–2, the Schottky barrier height of TiPtAu contacts on GaAs is reduced from 0.74 to 0.53 eV as a result of this damage, and the photoluminescent intensity from the material is degraded. Alter RIE, we detect the presence of both F and Br on the surface of all of the semiconductors. This contamination is worse than with CCl₂F₂-based mixtures. High-power etching with CF₃Br/Ar together with Al-containing electrodes can lead to the presence of a substantial layer of aluminum oxide on the samples if the moisture content in the reactor is appreciable.     

Determination of trace metals in industrial boron carbide by solid sampling optical emission spectrometry. Optimization of DC arc excitation (current, atmosphere and chemical modifier)

Graphite arc emission spectrometry has become possible as a result of the invention of novel types of optical spectrometers with Echelle-optics and semiconductor array detectors, and by the application of electronically controlled, high current arc generators. An optimization of the excitation parameters to boron carbide analysis is reported here, measuring background corrected line intensities that were integrated for the time of total evaporation of 5 mg boron carbide sample with or without added chemical modifiers. The following set of experimental conditions were compared with respect of analytical sensitivity and precision: (A) no modifier, Ar + O₂ (20%), 16 A; (B) sample + graphite powder (1 + 1), Ar + O₂ (20%), 16 A; (C) sample + CaF₂ (1 + 1), Ar, 25 A; (D) sample + CaF₂ + graphite powder (1 + 1 + 1), Ar, 25 A. The graphite powder modifier resulted in improved precision in general, and the CaF₂ was effective as a plasma ionization buffer and fluorinating agent. The best compromise was found under conditions B, when oxygen was present in the discharge atmosphere. This is likely due to the stepwise conversion of the boron carbide matrix to the more volatile boron oxide. Under conditions B, detection limits in the ranges of 0.3–9 μg g⁻¹ for Al, Ca, Cr, Cu, Fe, Mg, Mn and Si and that of 18–38 μg g⁻¹ for Ti, W, and Zr were attained. Average RSDs of 10.2 and 9.7% were found, respectively, without and with internal referencing to boron.     

Large-area microwave and radiofrequency plasma etching of polymers

We have investigated O₂/CF₄ plasma etching of five commercial polymers: polyimide, polyamide, polyethylene terephthalate, polycarbonate and cured epoxy resin. A new large-area microwave plasma apparatus has been used in this work, but the same apparatus can also be used as a capacitively coupled radiofrequency (13.56 MHz) discharge reactor. The effect of operating parameters such as pressure, etchant gas composition, excitation frequency and sample temperature upon etch kinetics has been examined. We have observed distinct maxima in the etch rate as functions of pressure and CF₄ concentration. Activation, energies evaluated from the Arrhenius plots fall in the range 0.04-0.2 eV, in agreement with data in the literature. Dry etch susceptibility of a given polymer correlates strongly with the degree of unsaturation in the polymer's structure     

Gas chromatographic determination of organolead compounds with an alternating current plasma detector

The performance of the gas chromatography/alternating current plasma detector as a selective detector for organolead compounds is investigated. The helium make-up flow rate and the spatial position from which the lead emission is viewed, have an effect on the detector response. The detection limit for tetrabutyl lead was established as 130 pg/s and the lead selectivity ratio was found to exceed 13,800. Some applications of organolead determination in complex matrices were also studied in order to demonstrate the selectivity and sensitivity of the alternating current plasma detector.     

Surface Modification of Nitrile Rubber by Plasma Polymerization

Radio frequency plasma polymerization of vinylidene fluoride was used to modify the surface properties of nitrile rubber. The chemistry and frictional properties of the plasma films were characterized. FTIR transmission spectra and EDX analysis of plasma polymer films deposited on NaCl windows showed that the degree of fluorination of the plasma polymers increased as plasma power was increased from 25 to 50 W, and then decreased monotonically at higher powers. An estimation of the actual F/C ratio from EDX data indicated that the plasma polymer films contained approximately one fluorine atom for every 2–5 carbon atoms. Sliding friction tests on a Delrin countersurface showed that the coefficient of friction of the plasma treated rubbers was lower than untreated rubber, but slighly higher than rubber coated with silicone oil. Repetitive sliding friction testing showed that silicone oil treated samples had a longer lubricating lifetime than plasma treated samples. However, cyclic friction tests conducted with nitrile rubber o-rings yielded similar frictional behavior and lubricating lifetimes for silicone oil and plasma treatments. There was no correlation between chemical composition and the frictional and wear properties of the plasma films. Environmental scanning electron micrographs showed that the plasma films were brittle and tended to crack and flake off during wear testing.     

Size-related vaporisation and ionisation of laser-induced glass particles in the inductively coupled plasma

Ongoing discussions about the origin of elemental fractionation occurring during LA-ICP-MS analysis show that this problem is still far from being well understood. It is becoming accepted that all three possible sources (ablation, transport, excitation) contribute to elemental fractionation. However, experimental data about the vaporisation size limit of different particles in the ICP, as produced in laser ablation, have not been available until now. This information should allow one to determine the signal contributing mass within the ICP and would further clarify demands on suitable laser ablation systems and gas atmospheres in terms of their particle size distribution.The results presented here show a vaporisation size limit of laser induced particles, which was found at particle sizes between 90 nm and 150 nm using an Elan 6000 ICP-MS. Due to the fact that the ICP-MS response was used as evaluation parameter, vaporisation and ionisation limits are not distinguishable.The upper limit was determined by successively removing the larger particles from the aerosol, which was created by ablation of a NIST 610 glass standard at a wavelength of 266 nm, using a recently developed particle separation device. Various particle fractions were separated from the aerosol entering the ICP. The decrease in signal intensity is not proportional to the decrease in volume, indicating that particles above 150 nm in diameter are not completely ionised in the ICP. Due to the limited removal range of the particle separation device, which cannot remove particles smaller than 150 nm, single hole ablations were used to determine the lower vaporisation limit. This is based on measurements showing that larger particles occur dominantly during the first 100 laser pulses only. After this period, the ratio of ICP-MS counts and total particle volume was found to be constant while most of the particles are smaller than 90 nm, indicating complete vaporisation and ionisation of these particles.To describe the influence of different plasma forward powers on the vaporisation limit, the range 1000–1600 W was studied. Results indicate that optimum vaporisation and ionisation occurs at 1300 W. However, an increase of the particle ionisation limit towards larger particles was not observed within the accuracy of this study using the full range of parameters available for optimisation on commonly used ICP-MS instruments.     

Rapid stereoselective separations of amphetamine derivatives with highly sulfated gamma-cyclodextrin

The highly sulfated gamma-CD (HS-gamma-CD) is a chiral selector widely used in CE for the enantioseparation of pharmaceutical compounds. This paper investigated different approaches to reduce the stereoselective analysis time of amphetamine (AT) derivatives according to the chiral selector concentration in the BGE. With high HS-gamma-CD concentration, tested analytes were separated in 3.5 min as anionic complexes with short-end injection technique in reversed polarity mode. However, this procedure presented some limitations in terms of efficiency and resolution, excessive Joule heating and poor compatibility with MS detection. With low HS-gamma-CD concentration, compounds were separated as cations. Conventional approaches to reduce CE analysis time demonstrated critical resolution between some analytes. Therefore, the use of the partial-filling technique compatible with MS detection was carried out. Under optimized conditions, the analysis time for the chiral separation of seven AT like compounds was reduced to 6 min. Moreover, sensitivity of CE-MS was sufficient for the determination of ATs in plasma following a simple liquid-liquid extraction.     

丙醛的等离子体聚合以及聚合物的结构与性质初探

应用外部电容耦合式等离子体聚合方法,制得了丙醛聚合物,研究了不同的等离子体条件对丙醛的聚合行为的影响。通过元素分析、红外光谱分析、色谱-质谱联合分析、X-射线衍射、润湿性测定等手段研完发现,聚合物为无定形交联结构,表面能为41—45达因/厘米。     

Anode Magnetron Enhanced DC Glow Discharge Processes for Plasma Surface Cleaning and Polymerization

The objective of this study was to examine some fundamental factors involved in the design and construction of the anode magnetron dc glow discharge processes as well as its performance in plasma cleaning and polymerization. Those advantages of anode magnetron include the capability of the magnetron to operate at low pressure, as well as decreasing the thickness of cathode dark space, i.e., the negative glow which contains a higher concentration of ions and active species was more closely to the cathode surface, which makes the plasma surface cleaning and polymerization an effective and uniform processes. The deposition rate at a given discharge power is increased by the presence of anode magnetrons, and is also much higher relative to rf and af. The refractive index of dc plasma film at a given polymer thickness (such as TMS, 70 nm, RI: 2.4) is higher than rf, af, and cascade arc plasma (RI: 1.6–1.7).     

Validated HPLC–MS–MS method for determination of azithromycin in human plasma

A validated, highly sensitive, and selective HPLC method with MS–MS detection has been developed for quantitative determination of azithromycin (AZI) in human Na₂EDTA plasma. Roxithromycin (ROX) was used as internal standard. Human plasma containing AZI and internal standard was ultrafiltered through Centrifree Micropartition devices and the concentration of AZI was determined by isocratic HPLC–MS–MS. Multiple reaction monitoring mode (MRM) was used for MS–MS detection. The calibration plot was linear in the concentration range 2.55–551.43 ng mL⁻¹. Inter-day and Intra-day precision and accuracy of the proposed method were characterized by R.S.D and percentage deviation, respectively; both were less than 8%. Limit of quantification was 2.55 ng mL⁻¹. The proposed method was used to determine the pharmacokinetic profile of AZI (250-mg tablets).