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1.
Plasma-assisted flow control is of high industrial interest, but practical applications at full scale require a large surface of interaction. Nanosecond pulsed Dielectric Barrier Discharge (DBD) have demonstrated promising results of flow control, but their interacting region is limited to only a few cm2. In this paper, the conditions to extend a surface nanosecond DBD are documented. It is shown that a sliding discharge regime can fully fill an inter-electrode distance of 40 mm. This discharge regime promotes the formation of two hemispheric pressure waves originating from both air-exposed electrodes while an horizontal region of pressure gradient is also observed. 相似文献
2.
托卡马克工程试验混合堆等离子体性能的等值线图分析 总被引:3,自引:3,他引:0
盛光昭 《核聚变与等离子体物理》1989,9(1):29-36
本文简要叙述托卡马克工程试验混合堆等离子体概念设计的物理基础,对等离子体性能进行了等值线图(Plasma Operation Contour)分析。根据工程试验混合堆的要求,得出一组等离子体参数。 相似文献
3.
A Garcia-Quiroz David L AzevedoE.C da Silva 《Journal of Physics and Chemistry of Solids》2002,63(10):1863-1866
Properties of oxygenated carbon nitride films have attracted the attention of physics researchers due to their magnetic and physical properties, as well as for their usefulness in the industry. The free radicals were investigated using electron paramagnetic resonance applied in the study of spin concentration due to the different mechanism of preparation of carbon nitride films by RF-discharge with different kinds of plasma. Unpaired spin concentrations, in the order of 1020 per cm3, were measured and their time recombination dependency was important in those films. The films were grown by plasma enhanced chemical vapor deposition using mixtures of hydrocarbons, N2 and O2 in different proportions. 相似文献
4.
We present a simplified relativistic configuration interaction method (SRCI), by which all the energy levels and oscillator strengths in each transition array can be calculated. There exist generalized quasi-sum relations for the calculated oscillator strengths in the relevant transition arrays by the SRCI and by an unresolved transition array model (UTA). Based on UTA and the detailed configuration accounting (DCA), with a fully relativistic treatment incorporated with the quantum defect theory, the X-ray absorption spectra for any middle- and high-Z plasmas or composite plasmas can be calculated with much less computational efforts. The gross features of calculated spectra by DCA-UTA are in agreement with the relevant experimental measurements, except some detailed structures in some narrow spectral ranges. Such detailed structures can be calculated by SRCI incorporated with DCA-UTA. As an illustrative example, the absorption spectra of Ge plasmas are calculated by DCA-UTA-SRCI and are in agreement with the experimental opacity data. Therefore, the theoretical method (DCA-UTA-SRCI) verified by experimental measurements will not only be a basic tool to provide “precision” opacity data for the inertial confinement fusion research (ICF) and studies in stellar physics but also can be used to analyze the relevant diagnostic measurements for ICF plasmas. 相似文献
5.
研究了不同衬底-阴极距离、直流电压和H2流量对a-CH薄膜沉积速率的影响。结果表明:衬底-阴极距离必须大于0.5cm,随着该距离的增加,薄膜的沉积速率减少;直流电压达550V时沉积速率最大;随着H2含量的增加,CH4含量相对减少,沉积速率随之降低。用AFM观察了以该方法制得的448.4nm CH薄膜的表面形貌,表面粗糙度约为10nm。最后测出了不同条件下CH薄膜的UV-VIS谱,由此可以计算得到薄膜的禁带宽度及折射率。 相似文献
6.
对HL-1M边缘等离子体静电湍流扰动进行了初步的实验研究。获得了扰动的基本特征量,估计了低杂波引起的径向粒子流的变化。在加低杂波(2.45GHz)前、后,电子密度扰动和极向电场扰动的幅度及其关联性变化不大。虽然低杂波部分抑制了静电湍流,但在数量上不能解释粒子约束改善的实验结果。 相似文献
7.
L. Torrisi A.M. Mezzasalma J. Badziak J. Wolowski G. Franco 《Applied Surface Science》2006,252(24):8533-8538
High energy laser plasma-produced Cu ions have been implanted in silicon substrates placed at different distances and angles with respect to the normal to the surface of the ablated target. The implanted samples have been produced using the iodine high power Prague Asterix Laser System (PALS) using 438 nm wavelength irradiating in vacuum a Cu target. The high laser pulse energy (up to 230 J) and the short pulse duration (400 ps) produced a non-equilibrium plasma expanding mainly along the normal to the Cu target surface. Time-of-flight (TOF) technique was employed, through an electrostatic ion energy analyzer (IEA) placed along the target normal, in order to measure the ion energy, the ion charge state, the energy distribution and the charge state distribution. Ions had a Boltzmann energy distributions with an energy increasing with the charge state. At a laser fluence of the order of 6 × 106 J/cm2, the maximum ion energy was about 600 keV and the maximum charge state was about 27+.In order to investigate the implantation processes, Cu depth profiles have been performed with Rutherford backscattering spectrometry (RBS) of 1.5 MeV helium ions, Auger electron spectroscopy (AES) with 3 keV electron beam and 1 keV Ar sputtering ions in combination with scanning electron microscopy (SEM). Surface analysis results indicate that Cu ions are implanted within the first surface layers and that the ion penetration ranges are in agreement with the ion energy measured with IEA analysis. 相似文献
8.
Catherine Cordier-Robert Thierry Grosdidier Gang Ji Jacques Foct 《Hyperfine Interactions》2006,168(1-3):951-957
Microstructured (atomized) and nanostructured (milled) Fe60Al40 powders together with their corresponding coatings synthesized by High Velocity Oxy-fuel (HVOF) or Atmospheric Plasma Spray (APS) thermal spraying techniques have been characterized by Mössbauer Spectroscopy (MS) and X-ray Diffraction (XRD). The evolution of the microstructure and the atomic ordering degree in the powders and coatings are discussed at the light of the various processing conditions. The operational correlation between the parameters of the duplex morphology of coatings and the processing parameters is discussed. 相似文献
9.
10.
Interface properties of BCN/GaN metal-insulator-semiconductor (MIS) structures are investigated by X-ray photoelectron spectroscopy (XPS) and capacitance versus voltage (C-V) characteristics measurements. The BCN/GaN samples are fabricated by in situ process consisting of plasma treatment and deposition of BCN film in the plasma-assisted chemical vapor deposition (PACVD) apparatus. XPS measurement shows that the oxide formation at the BCN/GaN interface is suppressed by nitrogen (N2) and hydrogen (H2) plasma treatment. The interface state density is estimated from C-V characteristics measured at 1 MHz using Terman method. The minimum interface state density appears from 0.2 to 0.7 eV below the conduction band edge of GaN. The minimum value of the interface state density is estimated to be 3.0 × 1010 eV−1 cm−2 for the BCN/GaN structure with mixed N2 and H2 plasma treatment for 25 min. Even after annealing at 430 °C for 10 min, the interface state density as low as 6.0 × 1010 eV−1 cm−2 is maintained. 相似文献