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71.
Mohamed Boumerzoug Marcel Boudreau Peter Mascher 《Plasma Chemistry and Plasma Processing》1997,17(2):181-192
Real-time optical emission spectroscopy (OES) was used to monitor the deposition of TiN both from mixtures of tetrakis(dimethylamino)titanium
(TDMATi)-N2 and TiCl4-H2-N2 in an electron cyclotron resonance chemical vapor deposition system. The accurate control of the ratio of the emission intensities
of ionized nitrogen at 391.4 nm and molecular nitrogen at 357.7 nm (N
2
+
/N2) led to low temperature deposition of stoichiometric TiN (Ti/N ≈ 1) and very low resistivity in both cases. It was found
that high ion density plasmas are crucial for a considerable reduction of the deposition temperature while maintaining good
film quality. OES shows that the abundance of certain excited plasma species is not only dependent on the gas mixture and
the deposition parameters, such as total pressure and microwave power, but also is strongly affected by the magnetic field
configuration. The deposition rate and the film resistivity can be related to the emission intensity ratio, I(N
2
+
)/I(N2). Finally, the two processes are compared in terms of the quality of as-deposited and heat-treated films. The comparison
shows that the films obtained with TDMATi exhibit lower resistivity and are thermally more stable than with TiCl4. 相似文献
72.
M. Röder J. Hahn U. Falke S. Schulze F. Richter M. Hietschold 《Mikrochimica acta》1997,125(1-4):283-286
A series of BN films was deposited by means of r.f. magnetron sputtering of a h-BN target onto Si(1OO) surfaces. Hereby, the substrate bias voltage was varied. Special interest is focussed to the influence of the deposition parameters on the orientation of the growing hexagonal BN film with respect to the substrate. For structural investigation, cross section samples were prepared. In addition to HRTEM and diffraction investigations, especially electron energy loss spectroscopy (EELS) was applied successfully for phase identification. For negative bias voltages of U
B
=–300 V and U
B
=–350V, we found a phase system consisting of a first-grown 25 nm thick layer of hexagonal structure with the c axis parallel to the substrate surface followed by the cubic phase.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday 相似文献
73.
74.
IntroductionIthasbccndcmonstratcdthatmcthancrcformingt"ithcarbondioxidcpr0ducessynthcsisgasrichincarbonmonoxidc-x"hichisuscfulforthcs}nthcsisofaccticacid'dimcthylcthcrando.o-alcoholsll'2].Carbondioxidcref0rmingismorccndothcrmicthanstcamrcformingfCH4 CO2,'2CO 2H2Ai/'2,,=2473kJ..ol-1(l)Accordingl\"thisrcact1onnccdshighcrtcmpcraturcandlimitsspaccvclocityoffccdgas,Wehavcprct'ious1\studicdmcthancrcformingt"lthC02inthcmonotubcproccssl3J.Inordertoconvcrtmcthancinfccdgascomplctcl}',thcspaccvcloci… 相似文献
75.
The concept of the residence time τksp of an atom in a kink site has recently been suggested to understand the processes in electrochemical deposition of alloys
and intermetallic compounds. Different kink sites with different residence times must be defined for alloys and intermetallic
compounds. Based on this model, the finite Markov chain theory is applied to describe the selectivity of the growth process.
An analytical relationship between the alloy composition and the metal ion concentrations in the electrolyte is derived. General
model parameters are ratios g
i = K
ii/K
ij of equilibrium constants of the reaction of electrolyte ions with different kink sites on the surface (i, j representing different alloy components). These ratios are called selectivity constants. For simple conditions, the equation
g
i ≈ τii/τij connects the g
i values with the residence times. The theory is tested in the deposition of alloys Co-Ni (anomalous co-deposition) and Ni-Mo
(induced co-deposition). Additionally, Bi2Te3, an example of stoichiometric semiconductor deposition, is treated.
Published in Russian in Elektrokhimiya, 2006, Vol. 42, No. 10, pp. 1216–1223.
The text was submitted by the authors in English. 相似文献
76.
Y. Shacham-Diamand Y. Sverdlov V. Bogush R. Ofek-Almog 《Journal of Solid State Electrochemistry》2007,11(7):929-938
Thin cobalt alloy films have been obtained using electroless deposition solution with two reducing agents: dimethylamine borane
(DMAB) and sodium hypophosphite. This system allows spontaneous and self-activated deposition of barrier layers on Cu lines
and via contacts for ultra large scale integration (ULSI) interconnects applications. This work presents a study of the solution
composition effects on the material properties and composition of the films. First, we present the deposition rates, the electrical
resistance, the various element profiles in the thin film, and the thin film roughness. Next, we discuss the film’s composition
and its dependence on the ratio between the reducing agents composition in the solution. The experimental results suggest
that the film phosphorous and boron composition is determined by the surface adsorption rates of the reducing agents. Therefore,
a surface co-adsorption model of the two reducing agents is proposed, formulated, analyzed, and compared to the experimental
results. Finally, we discuss the model and its significance to the formation of high-quality ultra-thin barrier layers.
Dedicated to Professor Dr. Algirdas Vaskelis on the occasion of his 70th birthday. 相似文献
77.
The determination of sulphide at an electrochemically generated nickel oxide layer at glassy carbon and screen-printed electrodes in acidic media has been examined and appraised. The NiO layer was found to produce a stripping-like signal to sulphide and gave a linear peak current response from 20 to 90 μM. The response was further enhanced by repetitive cycling allowing accumulation of nickel sulphide at the electrode surface such that lower micromolar levels of sulphide (i.e. 5 μM) can be determined. The response at the NiO layer to sulphide is shown to be reproducible over a period of 24 h, thereby offering the development of a disposable amperometric sensor for sulphide. 相似文献
78.
The treatment of the non-linear isotherm in chromatography by one of the authors [1] is extended to other cases of practical interest. The original paper dealt with the case of an initially thin zone resulting in a Poisson distribution the asymmetry of which is a function of the plate number and the non-linearity constant. The present work shows that the same relations apply to initially thick zones and to the cases of washing and deposition leading to simple relations for breakthrough curves. For significantly non-linear isotherms other quasi-Gaussian distributions can give a better fit. 相似文献
79.
Sandip Halder Theodor Schneller Rainer Waser Florian Thomas 《Journal of Sol-Gel Science and Technology》2007,41(3):203-207
Nickel thin films have been sputtered on standard Si/SiO2 substrates with TiO2 as an adhesive layer. The thermal stability of these substrates was analyzed. SEM images show an increase in grain size with
annealing temperature. They were found to be stable till 800°C, beyond which the nickel layer disintegrated. These substrates
were used for deposition of BaTiO3 and (Ba,Sr)TiO3 dielectric thin films under a reducing atmosphere. The dielectric thin films were processed with various pyrolysis and annealing
temperatures in order to optimize the dielectric properties. Increased pyrolysis temperatures showed an increase in the grain
size. Results on these nickelised substrates were finally compared with dielectric films deposited on platinized silicon substrates
under identical conditions but crystallized in an oxygen atmosphere. 相似文献
80.
The use of wet and dry ashing procedures to decompose marine biological tissues and to degrade organoarsenic compounds to inorganic arsenic for analysis by zinc-column arsine generation and atomic-absorption spectrophotometry was investigated. Wet ashing with nitric, sulphuric and perchloric acids (10:2:3 v/v) released the largest percentage of arsenic from fish tissue and quantitatively degraded methylated and other organoarsenic compounds to inorganic arsenic. The arsenic concentrations found when standard reference materials were ashed with this acid mixture were in agreement with the certified values. 相似文献