A sol-gel synthesis procedure based on the method proposed by Stöber et al. (J Colloid Interface Sci 26:302–315, 1968) has been adopted for the one-step preparation of mono-dispersed silica nanospheres. An excellent control of the particle diameter over a wide range is obtained by varying the amount of silicon alkoxide only, while the concentration of all other components is kept fixed: this allows the fabrication of artificial opals with a finely tuned and precisely predictable lattice parameter. 相似文献
Photonic crystal structures (PCs) of tetragonal lattice type are introduced and studied. They feature complete three-dimensional (3D) photonic bandgaps (PBGs). The PC design is based on two systems of ordered, parallel pores being perpendicular to each other. For increasing pore radii, the pore systems interpenetrate and an inverted woodpile geometry arises. The size of the 3D bandgaps depends on the ratio of the cell parameters Lx, Ly, and Lz, the pore radii and the refractive index of the dielectric material. If realized as a silicon/air structure, the maximum 3D gap is larger than 25%. A possible fabrication route for the near-infrared is based on 2D macroporous silicon where perpendicular pores are drilled, e.g., by focused-ion-beam etching. The dispersion behaviour of the PCs is theoretically analysed (band structures, density-of-states), systematically varying all relevant parameters. The optimization of the PBG sizes as well as a possible tunability of the PBG energies are discussed. 相似文献
We discuss recent progress and the exciting potential of scanning probe microscopy methods for the characterization and control of photonic crystals. We demonstrate that scanning near-field optical microscopy can be used to characterize the performance of photonic crystal device components on the sub-wavelength scale. In addition, we propose scanning probe techniques for realizing local, low-loss tuning of photonic crystal resonances, based on the frequency shifts that high-index nanoscopic probes can induce. Finally, we discuss prospects for on-demand spontaneous emission control. We demonstrate theoretically that photonic crystal membranes induce large variations in spontaneous emission rate over length scales of 50 nm that can be probed by single light sources, or nanoscopic ensembles of light sources attached to the end of a scanning probe. 相似文献
Entangled photon pairs must often be spatially separated for their subsequent manipulation in integrated quantum circuits. Separation that is both deterministic and universal can in principle be achieved through anti‐coalescent two‐photon quantum interference. However, such interference‐facilitated pair separation (IFPS) has not been extensively studied in the integrated setting, which has important implications on performance. This work provides a detailed review of IFPS and examines how integrated device dependencies such as dispersion impact separation fidelity and interference visibility. The analysis applies equally to both on‐chip and in‐fiber implementations. When coupler dispersion is present, the separation performance can depend on photon bandwidth, spectral entanglement and the dispersion. By design, reduction in the separation fidelity due to loss of non‐classical interference can be perfectly compensated for by classical wavelength demultiplexing effects. This work informs the design of devices for universal photon pair separation of states with tunable arbitrary properties.
A decagonal quasicrystal,which is weakened by an arc-shaped crack penetratingthrough the solid in the period direction,and which is subjected to remote uniform phonon stresses,is investigated by applying the complex variable method which is just developed by the authors.It is found that the phonon and phason stresses near the crack tips exhibit inverse square rootsingularities.The four complex stress functions characterizing the phonon and phason fields arederived.Explicit expressions for the phonon and phason stress intensity factors,crack openingdisplacements and energy release rate are also presented. 相似文献
The present paper covers the various photonic crystals(PhCs) structures mimicking real atom-lattice structures in electronic crystals by using the femtosecond laser-induced two-photon photopolymerization of SU-8 resin. The bandgap properties were investigated by varying the crystal orientations in <111>, <110> and <100> of diamond-lattice PhCs. The photonic stop gaps were present at λ=3.88 μm in <111> direction, λ=4.01 μm in <110> direction and λ=5.30 μm in <100> direction, respectively. In addition, defect... 相似文献
In this article, we study the plasmonic resonance of infinite photonic crystal mounted by the double negative nanoparticles in two dimensions. The corresponding physical model is described by the Helmholz equation with so called Bloch wave condition in a periodic domain. By using the quasi-periodic layer potential techniques and the spectral theorem of quasi-periodic Neumann–Poincaré operator, the quasi-static expansion of the near field in the presence of nanoparticles is derived. Furthermore, when the magnetic permeability of nanoparticles satisfies the Drude model, we give the conditions under which the plasmonic resonance occurs, and the rate of blow up of near field energy with respect to nanoparticle's bulk electron relaxation rate and filling factor are also obtained. It indicates that one can appropriately control the bulk electron relaxation rate or filling factor of nanoparticle in photonic crystal structure such that the near field energy attains its maximum, and enhancing the efficiency of energy utilization. 相似文献
In the present paper, a novel photonic crystal (PC) defect mode is designed by inserting a ferroelectric material layer (LiNbO3) into Si/C60 one-dimensional PCs. The band structure of the ferroelectric PCs is numerically analyzed by the transfer matrix method (TMM). The width of the photonic band gap increases by 80 nm and a defect mode appears at a central wavelength of 680 nm when a 150 nm LiNbO3 layer is inserted into the Si/C60 PC structure. The defect mode in the band gap shifts linearly with the change in electric field. The defect mode shifts by 11.2 nm toward shorter wavelengths when the thin film is subjected to a DC voltage of 1 KV. 相似文献