首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   2027篇
  免费   451篇
  国内免费   169篇
化学   675篇
晶体学   12篇
力学   16篇
综合类   2篇
数学   28篇
物理学   1914篇
  2024年   3篇
  2023年   24篇
  2022年   51篇
  2021年   48篇
  2020年   69篇
  2019年   49篇
  2018年   47篇
  2017年   53篇
  2016年   66篇
  2015年   74篇
  2014年   90篇
  2013年   120篇
  2012年   79篇
  2011年   104篇
  2010年   106篇
  2009年   174篇
  2008年   117篇
  2007年   203篇
  2006年   218篇
  2005年   107篇
  2004年   115篇
  2003年   117篇
  2002年   84篇
  2001年   109篇
  2000年   78篇
  1999年   60篇
  1998年   74篇
  1997年   58篇
  1996年   43篇
  1995年   21篇
  1994年   25篇
  1993年   14篇
  1992年   11篇
  1991年   5篇
  1990年   9篇
  1989年   3篇
  1988年   3篇
  1987年   1篇
  1986年   3篇
  1985年   4篇
  1984年   3篇
  1981年   2篇
  1980年   1篇
  1979年   1篇
  1973年   1篇
排序方式: 共有2647条查询结果,搜索用时 203 毫秒
151.
Experimental results on the current–voltage (IV) characteristics of amorphous Si nanostructures reported by Irrera et al. [A. Irrera, F. Iacona, I. Crupil, C.D. Presti, G. Franzo, C. Bongiorno, D. Sanfilippo, G. Di Stefano, A. Piana, P.G. Fallica, A. Canino, F. Priolo, Nanotechnology 17 (2006) 1428] are reinterpreted in terms of a phonon-assisted tunneling model. It is shown that temperature dependence of current can be caused by the temperature dependence of electron tunneling rate from traps in the metal–semiconductor interface to the conduction band of the semiconductor. A good fit of experimental data with the theory is achieved in all measured temperature range from 30 to 290 K using for calculation the effective mass of 0.5me, and for the phonon energy the value of 12 meV. An advantage of this model over that of Irrera et al. used model is the possibility of describing the behavior of IV data measured at both high and low temperatures with the same set of parameters characterizing this material. The temperature-dependent IV data by Schricker et al. [A.D. Schricker, F.M. Davidson III, R.J. Wiacek, B.A. Korgel, Nanotechn. 17 (2006) 2681.] of GaAs nanowires, are also explained on the basis of this model.  相似文献   
152.
Suppose that a pair of entities which have been generated jointly from a common source are separated by an experimental device so that they cannot interact any more. Then, strictly formulating within the framework of traditional quantum mechanics, the ensemble of all pairs may be represented by either a separable or a non-separable statistical operator. The former stands for the independence of the sub-ensembles whereas the latter admits correlations (EPR correlations) due to the presence of interference or cross terms. The second-order correlation function Δ, which is also amenable by experiment, adopts different values depending on the choice of the statistical operator. So, by performing an experiment of this kind with molecules, the question could be decided whether EPR correlations appear in the molecular domain too. A detailed elaboration of the following idea is presented: let an achiral precursor molecule M2 dissociate so that two chiral fragments of different handedness are obtained. After separation R-M (L-M) interacts in a region of space A (B) with a photon I (II) in an already known linear polarization state. The enantiomeric correlation between the fragments is thereby conferred to the photons, and the corresponding changes of the polarization state are detected for different polarizer settings to finally yield Δ. Received 10 May 2000 and Received in final form 25 August 2000  相似文献   
153.
Formation of the beryllium (Be) submonolayers on the Si(1 1 1)7 × 7 surface has been studied using scanning tunneling microscopy. It has been found that Be interaction with Si(1 1 1) at 500-700 °C results in a self-assembly formation of the four various types of the highly-ordered nanostructure arrays. The nanostructure arrays develop on top of the “soft” silicide layer, which period and orientation alter with the nanostructure growth: the shorter the nanostructure period, the larger the rotation angle. The main structural parameters of the silicide layer and nanostructure arrays have been established.  相似文献   
154.
Temperature-programmed synthesis of micron-sized multi-responsive microgels   总被引:1,自引:0,他引:1  
A new synthetic protocol for the synthesis of large diameter (2.5 to 5 μm), temperature-, and pH-responsive microgels via aqueous surfactant-free radical precipitation copolymerization is presented. We have found that in this size range, which is not typically attainable using traditional dispersion polymerization approaches, excellent monodispersity and size control are achieved when the synthesis employs a programmed temperature ramp from 45 to 65 °C during the nucleation stage of the polymerization. A combined kinetic and thermodynamic hypothesis for large particle formation under these conditions is described. Particle sizes, volume phase transition temperatures, and pH responsivity were characterized by particle tracking and photon correlation spectroscopy to illustrate their similar behavior to particles made via more traditional routes. These particles have been enabling for various studies in our group where microscopic visualization of the particles is required.  相似文献   
155.
A rotating torsion balance method to detect the product of the photon mass squared and the ambient cosmic vector potential is proposed. This modulation method is efficacious whether the vector potential is fortuitously aligned with Earth's rotation axis or not, and the experimental precision of the modulation method can be improved by at least an order of magnitude compared to the statistical method.  相似文献   
156.
L. Lis 《Il Nuovo Cimento D》1990,12(7):935-940
Summary In this report investigations are presented of laser generations at 3391 nm and 3391 and 7699 nm, or rather of changes induced by them in populations of the 5s′ [1/2] 1 0 , 4p′[3/2]2 and 3d′[5/2] 3 0 levels, depending upon the angle of the tilted mirror of the He−Ne laser system. This writer has discovered that the above laser generations develop at a strongly tilted mirror, when the beam reflected from one mirror, in order to reach the other, has to be reflected many times on the inside walls of the discharge tube. The work was supported by CPBR 8.14.  相似文献   
157.
We compare step morphologies on surfaces of Al-rich metallic alloys, both quasicrystalline and crystalline. We present evidence that the large-scale step structure observed on Al-rich quasicrystals after quenching to room temperature reflects equilibrium structure at an elevated temperature. These steps are relatively rough, i.e., have high diffusivity, compared to those on crystalline surfaces. For the fivefold quasicrystal surface, step diffusivity increases as step height decreases, but this trend is not obeyed in a broader comparison between quasicrystals and crystals. On a shorter scale, the steps on Al-rich alloys tend to exhibit local facets (short linear segments), with different facet lengths, a feature which could develop during quenching to room temperature. Facets are shortest and most difficult to identify for the fivefold quasicrystal surface.  相似文献   
158.
量子隧穿中的等效势垒   总被引:2,自引:0,他引:2  
本文给出等效垫垒的概念及性质,利用等效势垒的性质可以使量子遂穿中的有关问题更容易解决。  相似文献   
159.
扫描隧道显微镜原子操纵技术是指利用扫描探针在特定材料表面以晶格为步长搬运单个原子或分子的技术.它是纳米尺度量子物理与器件研究领域一种独特而有力的研究手段.利用这种手段,人们能够以原子或分子为单元构筑某些常规生长或微加工方法难以制备的人工量子结构,通过对格点原子、晶格尺寸、对称性、周期性的高度控制,实现对局域电子态、自旋序、以及能带拓扑特性等量子效应的设计与调控.原子操纵技术与超快测量及自动控制技术的结合,使得人们能够进一步研究原子级精准的量子器件,因而该技术成为探索未来器件新机理、新工艺的重要工具.本文首先简介原子操纵方法的发展过程和技术要点,然后分别介绍人工电子晶格、半导体表面人工量子点、磁性人工量子结构、人工结构中的信息存储与逻辑运算、单原子精度原型器件等方面的最新研究进展,以及单原子刻蚀和自动原子操纵等方面的技术进展,最后总结并展望原子操纵技术的应用前景和发展趋势.  相似文献   
160.
Layered transition metal dichalcogenides (TMDs) are a diverse group of materials whose properties vary from semiconducting to metallic with a variety of many body phenomena, ranging from charge density wave (CDW), superconductivity, to Mott-insulators. Recent interest in topologically protected states revealed also that some TMDs host bulk Dirac- or Wyle-semimetallic states and their corresponding surface states. In this review, we focus on the synthesis of TMDs by vacuum processes, such as molecular beam epitaxy (MBE). After an introduction of these preparation methods and categorize the basic electronic properties of TMDs, we address the characterization of vacuum synthesized materials in their ultrathin limit-mainly as a single monolayer material. Scanning tunneling microscopy and angle resolved photoemission spectroscopy has revealed detailed information on how monolayers differ in their properties from multi-layer and bulk materials. The status of monolayer properties is given for the TMDs, where data are available. Distinct modifications of monolayer properties compared to their bulk counterparts are highlighted. This includes the well-known transition from indirect to direct band gap in semiconducting group VI-B TMDs as the material-thickness is reduced to a single molecular layer. In addition, we discuss the new or modified CDW states in monolayer VSe2 and TiTe2, a Mott-insulating state in monolayer 1T-TaSe2, and the monolayer specific 2D topological insulator 1T′-WTe2, which gives rise to a quantum spin Hall insulator. New structural phases, that do not exist in the bulk, may be synthesized in the monolayer by MBE. These phases have special properties, including the Mott insulator 1T-NbSe2, the 2D topological insulators of 1T′-MoTe2, and the CDW material 1T-VTe2. After discussing the pure TMDs, we report the properties of nanostructured or modified TMDs. Edges and mirror twin grain boundaries (MTBs) in 2D materials are 1D structures. In group VI-B semiconductors, these 1D structures may be metallic and their properties obey Tomonaga Luttinger quantum liquid behavior. Formation of Mo-rich MTBs in Mo-dichalcogenides and self-intercalation in between TMD-layers are discussed as potential compositional variants that may occur during MBE synthesis of TMDs or may be induced intentionally during post-growth modifications. In addition to compositional modifications, phase switching and control, in particular between the 1H and 1T (or 1T′) phases, is a recurring theme in TMDs. Methods of phase control by tuning growth conditions or by post-growth modifications, e.g. by electron doping, are discussed. The properties of heterostructures of TMD monolayers are also introduced, with a focus on lateral electronic modifications in the moiré-structures of group VI-B TMDs. The lateral potential induced in the moiré structures forms the basis of the currently debated moiré-excitons. Finally, we review a few cases of molecular adsorption on nanostructured monolayer TMDs. This review is intended to present a comprehensive overview of vacuum studies of fundamental materials' properties of TMDs and should complement the investigations on TMDs prepared by exfoliation or chemical vapor deposition and their applications.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号