有机单体3-phenyl-1-ureidonitrile薄膜的超高密度信息存储

采用扫描隧道显微镜(STM)在3-phenyl-1-ureidonitrile(PUN)有机单体薄膜上进行了超高密度信息存储的研究.通过在STM针尖和高定向裂解石墨(HOPG)衬底之间施加一系列的电压脉冲,在薄膜上写入了一个稳定的5×6信息点阵,信息点的大小是0.8nm.电流电压(I-V)曲线表明,施加电压脉冲前后薄膜的导电性质发生了变化.信息点的写入机制可能是强电场作用下引发的PUN分子的局域聚合,从而导致薄膜由高电阻态向低电阻态转变. 关键词： 超高密度信息存储 有机薄膜 扫描隧道显微镜(STM)     

原子力与光子扫描隧道组合显微镜

介绍了超高分辨光于扫描隧遭显微镜（PSTM）的计冗历程,为解决第一代（单光束照明）光千扫捕隧逼显傲镜中存在人为假象和样品光学图像与形貌图像难于分离两个难题,用“对称双光束照明方法消假象,用原子力与光子扫描隧道组合显微镜（AF／PSTM）图像分解方法分离样品光学透过率、折射率与形貌图像。研制成功新一代原子力与光子扫描隧道组合显微镜（AF／PSTM）样机。该样机在一次扫描中已获得两幅原子力显微镜图像（形貌与相位）和两幅光学图像（透过率和折射率）,有效地减少了假象,分解了样品光学折射率、透过率与形貌图像。     

铁磁金属量子阱态的共振隧穿

非铁磁金属层中的量子阱态在磁输运过程中的重要性已被广泛认识．铁磁金属层中自旋极化的量子阱态以前并没有详尽的理论研究；实验上也没有清晰地观测到自旋极化量子阱态的隧穿．文章介绍了最近由卢仲毅、张晓光和Pantelides预言的Fe／MgO／FeO／Fe／Cr和其他铁磁量子阱隧道结中的共振隧穿，并解释铁、钴、铬的△1能带的对称性在这种共振隧穿中的作用．     

二维铁电材料α-In2Se3 表面分子束外延生长Pb 纳米岛的STM 研究

铁电材料拥有自发电极化, 不同的极化方向会对异质结的电子结构产生可逆的和非易失性的影响. 本工作采用分子束外延技术在二维铁电材料α-In2Se3 衬底上成功制备了 Pb 纳米岛构建 Pb/α-In2Se3 超导铁电异质结,并通过扫描隧道显微镜表征了其表面原子结构与电子结构. 进一步的扫描隧道谱测量显示不同层厚 Pb 岛的量子阱态消失, 并且我们在4.5 K 的温度下没有观察到超导能隙, 表明铁电衬底会影响 Pb 岛的电子结构, 甚至其超导特性. 这些发现为理解铁电衬底对超导性的影响提供了参考, 并为调控低维量子材料中的电子结构及超导性提供了新的思路.     

电声子相互作用对量子点分子中单电子隧穿的影响

研究了双量子点系统中的电子隧穿动力学过程，在考虑电子与声子相互作用的情况下用基于 正则变换的微扰方法解析地得到了电子动态隧穿电流的表达式. 并且详细分析电子与声子耦 合引起的退相干问题，在此基础上指出了可能的退耦机理. 关键词： 电声子相互作用 双量子点 隧穿     

纳腔等离激元对分子上和分子旁边的隧穿电子诱导发光的作用研究

本文使用含时量子主方程,从理论上计算了当分子或者等离激元分别被激发的情形下等离激元-分子耦合体系发光特性的时间和光谱演化,并在此基础上讨论了纳腔等离激元在扫描隧道显微镜（STM）诱导发光中发挥的不同作用.当STM针尖在分子上方,隧穿电子可以直接激发分子时,纳腔等离激元的主要作用是通过提高分子的辐射速率来增强其发光,此时耦合体系表现出具有分子特征的尖锐发光峰.另一方面,当STM针尖非常靠近分子边缘但没有载流子注入直接激发分子时,等离激元-分子之间的相干耦合会在这两个量子客体之间产生相消干涉,导致在分子激子能量附近出现法诺共振,使我们观察到具有法诺凹谷特征的等离激元发光光谱.     

Nonlinear resonant tunneling diode (RTD) circuits for microwave A/D conversion

Short-duration electrical pulses play important roles in ultrafast time-domain metrology: they are used to sample rapidly varying signals or as probe signals in ranging radars, time-domain reflectometry and in communication. In this work, we design a nonlinear transmission, which is loaded with resonant tunneling diode to be suitable for microwave A/D conversion. A resonant tunneling diode (RTD) has a negative differential resistance that means when the voltage increases the current decreases. The equivalent circuit of monostable line is given. The simulation is performed by using OrCad program. Results show that a spike is produced and after a charging time constant, another switching occurs. Hence – similar to a relaxation oscillator – the spiking period is determined by the amplitude and frequency of the input current. The transmission line itself ensures the generation and propagation of identical spikes, such as solitons formed after few diodes.     

Metrological orientation-confirmation of Si(h h k) using scanning tunneling microscopy

For the periodicity-modulation of the Si(h h k) template between (0 0 1) and (1 1 1), it is necessary to prepare the surface with any orientation within this range, most especially for fabricating useful one-dimensional nanostructures. Especially, when there are no strong X-ray signals using the standard Cu K-α source in the vicinity of any arbitrarily chosen (H H K), it turns out that the line-profile analysis on the topographic image of scanning tunneling microscopy can be a unique way for confirming the orientation of the prepared surface. Though there are a number of small-width facets on the reconstructed surface, if any of well-defined facets, such as (1 1 1), (3 3 7), (1 1 2), and (3 3 5), are included in these facets it is possible to determine the orientation using the weighted-average method.     

Heavy‐Atom Tunneling Calculations in Thirteen Organic Reactions: Tunneling Contributions are Substantial,and Bell's Formula Closely Approximates Multidimensional Tunneling at ≥250 K

Multidimensional tunneling calculations are carried out for 13 reactions, to test the scope of heavy‐atom tunneling in organic chemistry, and to check the accuracy of one‐dimensional tunneling models. The reactions include pericyclic, cycloaromatization, radical cyclization and ring opening, and S_N2. When compared at the temperatures that give the same effective rate constant of 3×10⁻⁵ s⁻¹, tunneling accounts for 25–95 % of the rate in 8 of the 13 reactions. Values of transmission coefficients predicted by Bell's formula, κ_Bell , agree well with multidimensional tunneling (canonical variational transition state theory with small curvature tunneling), κ_SCT. Mean unsigned deviations of κ_Bell vs. κ_SCT are 0.08, 0.04, 0.02 at 250, 300 and 400 K. This suggests that κ_Bell is a useful first choice for predicting transmission coefficients in heavy‐atom tunnelling.