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1.
C. Maurel 《Surface science》2006,600(2):442-447
Light emitted in the tunneling junction of a scanning tunneling microscope has been used to establish the electrical characteristics of nanojunctions made of Au islands deposited on flat MoS2 surfaces. It is shown that these characteristics are those of rectifying contacts when the gold islands are isolated and that they evolve toward those of ohmic contacts when the island density increases. It is observed that the rectifying behavior also evolves over time as on infinite metal/semiconductor contacts. Using the STM tip, single gold islands can be manipulated on the MoS2 surface so that their electrical behavior can be changed depending on their position with regard to the other islands. 相似文献
2.
Twenty-five years ago, we introduced the phenomenon of negative luminescence (NL) into semiconductor physics. This paper provides an overview of work conducted to develop this fundamental concept. Initially, we consider the first-principle approach to radiation interaction with basic matter and the major properties of NL. Then we describe the problems of NL direct measurements in homogeneous materials and structures. Finally, we emphasize the use of NL approach in applications involving devices for infrared (IR) wavelength (3–12 μm) high-temperature (300–400 K) optoelectronics. Our subjects will include NL IR emitting diodes, radiative coolers, IR dynamic scene simulators, light up-conversion devices, and the Stealth effect in IR. 相似文献
3.
Volodymyr Malyutenko Vitalii Borblik Victor Vainberg 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):563
An all-optical approach to convert terahertz radiation (THz, wavelength λ1) into infrared (IR, peak wavelength λ2) is presented. We show that this up-conversion process is due to the photon drag effect induced by the THz radiation in intrinsic narrow-gap semiconductors followed by spatial redistribution of current carriers and band-to-band radiative recombination. The process results in non-selective high-speed (ns range rise/fall times) IR imaging of positive (conventional luminescence) and/or negative (negative luminescence) contrasts. Estimates made for an InSb pixelless converter at 300 K and moderate THz intensity (kW/cm2) show that this up-conversion process (with λ1/λ2>102) can be observed with a conventional thermal imaging camera. 相似文献
4.
R. Gerbaldo G. Ghigo G. Giunchi L. Gozzelino F. Laviano E. Mezzetti 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,26(3):297-300
We present results from an extended magneto-optical (MO) analysis of two samples cut from high-density pellets of MgB2. The first sample was studied in order to show that no matter how large the sample is and despite the bulk granularity, the
material enters into a critical state in a crystal-like fashion. The second sample was chosen for the quantitative analysis.
A numerical approach based on an inverted 2D Biot-Savart model was used to calculate the current paths across the homogeneous
polycrystalline bulk, as well as in the vicinity and across some morphological defects. Local current densities in the homogeneous
part were estimated as a function of the applied magnetic field at different temperatures, in three regimes: below full penetration,
at full penetration and above full penetration, respectively. A hypothesis of interpretation of the apparent absence of magnetic
granularity inside the polycrystalline microstructure is presented. It is related to a critical state likely reached by a
network of strongly coupled Josephson junctions.
Received 31 May 2001 and Received in final form 5 December 2001 相似文献
5.
6.
The initial stage of cubic silicon carbide (3C-SiC) growth on a Si(0 0 1) surface using dimethylsilane (DMS) as a source gas was observed using scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED). It was found that the dimer vacancies initially existing on the Si(0 0 1)-(2 × 1) surface were repaired by the Si atoms in DMS molecules, during the formation of the c(4 × 4) surface. From the STM measurement, nucleation of SiC was found to start when the Si surface was covered with the c(4 × 4) structure but before the appearance of SiC spots in the RHEED pattern. The growth mechanism of SiC islands was also discussed based on the results of RHEED, STM and temperature-programmed desorption (TPD). 相似文献
7.
Usually, numerical self-consistent calculations predict a much larger intrinsic bistability region than actually is measured in resonant tunneling diodes (RTDs). In addition, numerical calculations have shown that scattering in the well reduces bistability. We used a unified treatment of current flowing from continuum states and emitter quasi-bound states to show numerically and analytically that not only the scattering in the quantum well but also the scattering in the emitter reduces bistability. Moreover, within the Hartree approximation, bistability occurs by tunneling resonantly between emitter quasi-bound state and well quasi-bound state as a pitchfork bifurcation. 相似文献
8.
Gu-Qiang Li 《Theoretical and Mathematical Physics》2007,151(1):586-589
We use the Parikh-Wilczek method to treat Hawking radiation as a tunneling process across the event horizon and calculate
the emission rate of a Gibbons-Maeda dilaton black hole. We show that if self-gravitation is taken into account, then the
radiation deviates from the purely thermal spectrum, and the corrected spectrum is consistent with an underlying unitary theory.
__________
Translated from Teoreticheskaya i Matematicheskaya Fizika, Vol. 151, No. 1, pp. 172–175, April, 2007. 相似文献
9.
T. Grenet J. Delahaye M. Sabra F. Gay 《The European Physical Journal B - Condensed Matter and Complex Systems》2007,56(3):183-197
We present a study of non-equilibrium phenomena observed
in the electrical conductance of insulating granular aluminium thin films.
An anomalous field effect and its slow relaxation are studied in some
detail. The phenomenology is very similar to the one already observed in
indium oxide. The origin of the phenomena is discussed. In granular systems,
the present experiments can naturally be interpreted along two different
lines. One relies on a slow polarisation in the dielectric surrounding the
metallic islands. The other one relies on a purely electronic mechanism: the
formation of an electron Coulomb glass in the granular metal. More selective
experiments and/or quantitative predictions about the Coulomb glass
properties are still needed to definitely distinguish between the two
scenarios. 相似文献
10.
Due to the discovery of Au as a catalyst for low temperature CO oxidation, the adsorption of CO on Au surfaces has attracted a lot of attention recently. On stepped and rough single crystal surfaces as well as on deposited particles two characteristic desorption states above 100 K have been observed via TPD. We have studied Au deposits on graphite in order to elucidate the nature of these desorption peaks in more detail. For this purpose, Au was deposited at 100 K and 300 K on HOPG as a weakly interacting support. In analogy to other supports, we obtain two desorption states (∼140 K and ∼170 K) whose relative intensities depend strongly on the deposition temperature with the high temperature peak being much more pronounced for the 100 K deposits. After annealing to 600 K, both states drastically lose intensity. XP spectra, on the other hand, show virtually no decrease of the Au 4f intensity as would be expected for desorption or significant changes of the particle morphologies. We conclude that both desorption peaks are defect-related and connected with under-coordinated Au atoms that are lost for the most part upon annealing. These sites could be located at the perimeter of dendritic islands or on small, defect-rich particles in addition to larger particles not adsorbing CO at 100 K. Preliminary STM results are in favour of the second interpretation. 相似文献