Ellipsometric spectroscopy study of photoluminescent Si/SiO2 systems obtained by magnetron co-sputtering

Si nanograins embedded in silica matrix were obtained by magnetron cosputtering of both Si and SiO₂ at different substrate temperature (200–700°C) and thermal annealing at 1100°C. The samples were characterized by ellipsometric spectroscopy, high-resolution electron microscopy observations and photoluminescence. The highest excess of Si atoms was found to be incorporated for deposition temperature near 400–500°C, giving rise to a maximum PL and a shift of the peak position towards lower energy. These features might be interpreted in terms of quantum size effects and of density of grains, even though the interface states seem to be involved in the improvement of the photoluminescence efficiency.     

On the origin of 1.5 μm luminescence in porous silicon coated with sol–gel derived erbium-doped Fe2O3 films

Sol–gel derived Fe₂O₃ films containing about 10 wt% of Er₂O₃ were deposited on porous silicon by dipping or by a spin-on technique followed by thermal processing at 1073 K for 15 min. The samples were characterized by means of PL, SEM and X-ray diffraction analyses. They exhibit strong room-temperature luminescence at 1.5 μm related to erbium in the sol–gel derived host. The luminescence intensity increases by a factor of 1000 when the samples are cooled from 300 to 4.2 K. After complete removal of the erbium-doped film by etching and partial etching the porous silicon, the erbium-related luminescence disappears. Following this, luminescence at 1.5 μm originating from optically active dislocations (“D-lines”) in porous silicon was detected. The influence of the conditions of synthesis on luminescence at 1.5 μm is discussed.     

光致发光光谱在鉴别不同类型珍珠中的应用

爱迪生珍珠和珈百丽珍珠为近年来相继问世的优质淡水有核珍珠,分别酷似南洋珠和AKOYA珍珠,如何区分白色珍珠、金色珍珠、黑色珍珠及银灰色珍珠的类型和颜色成因,成为目前检测机构棘手的难题。对132颗不同类型的白色系、黄色系、黑色系、灰色系天然呈色珍珠与染色或辐照改色的各类珍珠进行了系统的PL光谱测试分析,结果表明不同类型的珍珠PL光谱有重要鉴别特征,尤其是PL光谱中荧光背景强度(F)与565 nm文石主峰强度(A)比值F/A,可有效区分不同类型白色珍珠以及黑色、金色银灰色珍珠的颜色成因。（1）白色南洋珠F/A值多集中于1附近,白色爱迪生珍珠与白色珈百丽珍珠具有类似的PL光谱与F/A值变化范围,但大部分样品出现631 nm发光峰,F/A值多集中于2;白色AKOYA珍珠的F/A值大于10。（2）金色南洋珠的F/A值多集中于1.6,变化范围较小,染金色南洋珠与染金色爱迪生珍珠F/A值基本都大于4。（3）深灰色体色Tahiti黑珍珠没有特征的发光峰,但随着颜色加深,逐渐出现617 nm处发光峰,黑色体色Tahiti黑珍珠具有稳定的有机卟啉相关的617和650 nm处发光峰;而绝大部分染色、辐照的黑色珍珠样品并未出现明显的荧光背景增强现象,但缺失617和650 nm处发光峰。（4）天然呈色银灰色AKOYA样品F/A值都小于3,而染色和辐照成因的银灰色AKOYA的F/A值都明显高（1.79~144）,并且因改色方式不同,存在一定的变化范围。     

Thermo and photoluminescence properties of Eu activated hexagonal, monoclinic and cubic gadolinium oxide nanorods

Different phases of Eu³⁺ activated gadolinium oxide (Gd (OH)₃, GdOOH and Gd₂O₃) nanorods have been prepared by the hydrothermal method with and without cityl trimethyl ammonium bromide (CTAB) surfactant. Cubic Gd₂O₃:Eu (8 mol%) red phosphor has been prepared by the dehydration of corresponding hydroxide Gd(OH)₃:Eu after calcinations at 350 and 600 °C for 3 h, respectively. When Eu³⁺ ions were introduced into Gd(OH)₃, lattice sites which replace the original Gd³⁺ ions, a strong red emission centered at 613 nm has been observed upon UV illumination, due to the intrinsic Eu³⁺ transition between ⁵D₀ and ⁷F configurations. Thermoluminescence glow curves of Gd (OH)₃: Eu and Gd₂O₃:Eu phosphors have been recorded by irradiating with gamma source (⁶⁰CO) in the dose range 10-60 Gy at a heating rate of 6.7 °C sec⁻¹. Well resolved glow peaks in the range 42-45, 67-76, 95-103 and 102-125 °C were observed. When γ-irradiation dose increased to 40 Gy, the glow peaks were reduced and with increase in γ-dose (50 and 60 Gy) results the shift in first two glow peak temperatures at about 20 °C and a new shouldered peak at 86 °C was observed. It is observed that there is a shift in glow peak temperatures and variation in intensity, which is mainly attributed to different phases of gadolinium oxide. The trapping parameters namely activation energy (E), order of kinetics (b) and frequency factor were calculated using peak shape and the results are discussed.     

Synthesis and luminescence properties of red-emitting phosphors NaY0.87Eu0.13(WO4)1.2(MoO4)0.8

A series of NaY_1−yEu_y(WO₄)_2−x(MoO₄)_x (x=0−2 and y=0.06−0.15) phosphors have been prepared by a combustion route. X-ray powder diffraction, photoluminescence excitation and emission spectra were used to characterize the resulting samples. The excitation spectra of these phosphors show the strongest absorption at about 396 nm, which matches well with the commercially available n-UV-emitting GaN-based LED chip. Their emission spectra show an intense red emission at 616 nm due to the ⁵D₀→⁷F₂ electric dipole transition of Eu³⁺. As the Mo content increases, the intensity of the ⁵D₀→⁷F₂ emission of Eu³⁺ activated at wavelength of 396 nm increases and reaches a maximum when the relative ratio of Mo/W is 2:3. The intense red-emission of the tungstomolybdate phosphors at near-UV excitation suggests that the material is a potential candidate for white light emitting diode (WLEDs).     

Synthesis and Eu concentration-dependent photoluminescence of Gd2−xEuxO3 nanowires

The nanowire growth behavior and photoluminescence characteristics of red-emitting oxide phosphor Gd_2−xEu_xO₃ have been investigated in the function of activator (Eu³⁺) concentrations (x=0.08, 0.12, 0.16, 0.20, and 0.24). Nanowires of Gd_2−xEu_xO₃ phosphor were prepared by the dehydration of corresponding hydroxides Gd_1−x/2Eu_x/2(OH)₃ obtained by the hydrothermal reaction. Highly uniform nanowires of 20-30 nm in diameter can grow up to several tens of micrometers in length. A number of defects on the surface of Gd_1.92Eu_0.08O₃ nanowires, which are induced during structural transformation from hexagonal hydroxide to cubic oxide, strongly decrease the luminescence efficiency in comparison with that of the bulk phosphor. In contrast, the photoemission intensity of nanowires is significantly improved with increasing Eu³⁺ content (x) of Gd_2−xEu_xO₃ solid solution. The highest relative emission intensity of nanowires is observed when the x value is close to x=0.20. This content is much higher than the optimal concentration of Eu³⁺ (x=0.08-0.10) for the bulk Gd₂O₃:Eu powder.     

Luminescence studies of Nd- and Yb-doped α-Y(IO3)3 and β-Y(IO3)3, transparent host matrix in the mid- and beginning of the far-infrared

α-Y(IO₃)₃ and β-Y(IO₃)₃ are transparent until 12.8 and 13.4 μm, respectively; thus they are interesting as a potential laser matrix in the mid- and beginning of the far-infrared. So, in order to investigate the properties of lanthanides- doped anhydrous yttrium iodate, polycrystalline samples of α-Y_1−xNd_x(IO₃)₃ (0.01?x?0.05), β-Y_1−xNd_x(IO₃)₃ (0.001?x?0.1), α-Y_1−xYb_x(IO₃)₃ (0.01?x?0.33) and β-Y_1−xYb_x(IO₃)₃ (0.01?x?0.25) were synthesized. For Nd³⁺ ions, fluorescent emissions from the ⁴F_3/2 multiplet were observed at 300 K under pulsed laser excitations at 750 nm and for Yb³⁺, fluorescent emissions from the ²F_5/2 multiplet were observed at 300 K under pulsed laser excitations at 980 nm. The decays of all these emissions were measured. They are exponential and the fluorescence lifetimes are in the range 0.093-0.193 ms for Nd³⁺ and 0.370-0.541 ms for Yb³⁺, depending on the nature of the host and the concentration of doping.     

Influence of GaAsSb structural properties on the optical properties of InAs/GaAsSb quantum dots

The optical properties of InAs quantum dots with GaAsSb buffer, capping and cladding layers of different alloy compositions are studied by photoluminescence techniques. Fully strained GaAsSb layers show that the inclusion of a buffer layer gives a blue-shift to quantum dot emission, while for quantum dots capped with GaAsSb a clear red-shift is seen. Power-dependent photoluminescence suggests a transition from type-I to type-II can be achieved by GaAsSb at Sb composition between 11–13%, while the transition for the GaAsSb cladding layer occurs at around 11%. At low Sb composition, good crystal quality and energy barrier are detected by temperature-dependent photoluminescence, while high-level dislocation and defects exist under high antimony content, as evidenced by X-Ray Diffraction and Transmission Electron Microscopy.     

Light emission from nanocrystalline silicon clusters embedded in silicon dioxide: Role of the suboxide states

Silicon clusters embedded in a silicon dioxide matrix were prepared by ultrasound-assisted implantation resulting in a modified concentration of suboxide states as revealed by high-resolution photoelectron spectroscopy. It is suggested that ultrasound treatment results in formation of different interface structure between silicon cluster and silicon dioxide matrix which is characterized by a distinctly reduced concentration of the suboxide states. It is observed that photoluminescence properties are strongly correlated with the concentration of the suboxide states thereby providing an evidence that besides a quantum confinement effect a closer look at the chemical composition of the nc-Si/SiO₂ system is important.     

空穴传输材料对CdSe核壳量子点的荧光影响

用稳态光谱和时间分辨光谱技术研究了空穴传输材料对CdSe/ZnSe 与CdSe/ZnS核壳量子点的荧光影响。结果表明,空穴传输材料对量子点有较强的猝灭作用,随空穴传输材料分子浓度的增加,量子点的荧光强度明显地被猝灭,同时量子点的荧光寿命也被减短。两种不同空穴传输分子对CdSe/ZnSe量子点的荧光猝灭明显不同。在与相同空穴传输分子相互作用时,包覆ZnS壳层的CdSe核壳量子点荧光猝灭效率明显低于包覆ZnSe壳层的CdSe核壳量子点。量子点的荧光猝灭过程可以解释为静态猝灭和动态猝灭过程,其中静态猝灭来源于量子点表面与空穴传输材料间相互作用,而动态猝灭则主要来源于量子点到空穴传输材料的空穴转移过程。实验结果表明空穴传输材料的种类以及核壳量子点的壳层结构都对其荧光猝灭效应起关键作用。